AOT10B60D Datasheet by Alpha & Omega Semiconductor Inc.

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ALPHA&0MEGA SEMICONDUCTOR Parameter AOT1OESDD 2013
AOT10B60D
600V, 10A Alpha IGBT TM with Diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 10A
V
CE(sat)
(T
C
=25°C) 1.53V
100% E
on
/E
off
Tested
100% Q
rr
Tested
100% Short Circuit Current Tested*
Symbol
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT10B60D
600V
G
C
E
Top View
AOT10B60D
G
C
TO-220
Symbol
V
CE
V
GE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
t
SC
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
* V
CE
equal to 50V
Continuous Diode
Forward Current
T
C
=25°C I
F
20 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
10
20
10
I
C
Turn off SOA, V
CE
600V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
W
Units
A
A
Parameter
±20 V
40 A
A
40
°C/W65
82
°C
40
AOT10B60D
Maximum Junction-to-Ambient
10 µs
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
Power Dissipation P
D
Short circuit withstanding time V
GE
= 15V, V
CE
400V, Delay between short circuits 1.0s,
T
C
=25°C
Junction and Storage Temperature Range
T
C
=25°C
Thermal Characteristics
300
-55 to 175
163
V
Units
Parameter
AOT10B60D
Collector-Emitter Voltage 600
°C/W1.7
Maximum Diode Junction-to-Case
°C/W0.92Maximum IGBT Junction-to-Case
G
C
E
Top View
AOT10B60D
G
C
TO-220
Rev.1.0: Nov 2013
www.aosmd.com Page 1 of 9
ALPHA & OMEGA LMIL ()ND 1/ l TOR Electrical charaaensucs (TJ=15“C unless otherwise noted) Turn-On Rlse Tlme
AOT10B60D
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 600 - - V
T
J
=25°C - 1.53 1.8
T
J
=125°C - 1.75 -
T
J
=175°C - 1.88 -
T
J
=25°C - 1.52 1.85
T
J
=125°C - 1.48 -
T
J
=175°C - 1.39 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.6 - V
T
J
=25°C - - 10
T
J
=125°C - - 200
T
J
=175°C - - 2000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 4.8 - S
C
ies
- 824 - pF
C
oes
- 68 - pF
C
res
- 2.7 - pF
Q
g
- 17.4 - nC
Q
ge
- 6.2 - nC
Q
gc
- 6.3 - nC
I
C(SC)
- 43 - A
R
g
- 3.2 -
t
D(on)
- 10 - ns
t
r
-
15
-
ns
Turn-On Rise Time
Turn-On DelayTime
T
J
=25°C
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CE
=480V, I
C
=10A
SWITCHING PARAMETERS, (Load Iductive, T
J
=25°C)
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits 1.0s
V
GE
=15V, V
CE
=400V, R
G
=30
Total Gate Charge
Gate resistance V
GE
=0V, V
CE
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CE
=25V, f=1MHz
V
CE
=20V, I
C
=10A
V
CE
=0V, V
GE
=±20V
Forward Transconductance
V
CE(sat)
I
C
=250µA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=10A V
V
CE
=600V, V
GE
=0V
V
GE
=0V, I
C
=10A V
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=V
GE
, I
C
=250µA
t
r
-
15
-
ns
t
D(off)
- 72 - ns
t
f
- 8.8 - ns
E
on
- 0.26 - mJ
E
off
- 0.07 - mJ
E
total
- 0.33 - mJ
t
rr
- 105 - ns
Q
rr
- 0.25 - µC
I
rm
- 5 - A
t
D(on)
- 10.4 - ns
t
r
- 15.6 - ns
t
D(off)
- 95 - ns
t
f
- 11.2 - ns
E
on
- 0.37 - mJ
E
off
- 0.17 - mJ
E
total
- 0.54 - mJ
t
rr
- 196 - ns
Q
rr
- 0.63 - µC
I
rm
- 6.8 - A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
J
=175°C
I
F
=10A,dI/dt=200A/µs,V
CE
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=175°C
V
GE
=15V, V
CE
=400V, I
C
=10A,
R
G
=30,
Parasitic Inductance=100nH
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Turn-Off Energy
Turn-On Rise Time
SWITCHING PARAMETERS, (Load Iductive, T
J
=175°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=10A,dI/dt=200A/µs,V
CE
=400V
Turn-Off Delay Time
T
J
=25°C
V
GE
=15V, V
CE
=400V, I
C
=10A,
R
G
=30,
Parasitic Ιnductance=100nH
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
Rev.1.0: Nov 2013 www.aosmd.com Page 2 of 9
ALPHA & OMEGA [:‘MICOND UC’I'OR TYPICAL ELECTRICAL AND THERMAL CHARACTERIS
AOT10B60D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IF(A)
V
F
(V)
Fig 4: Diode Characteristic
25°C
175°C
-40°C
0
10
20
30
40
50
60
70
01234567
IC(A)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
9V
20V
17
V
15V
11V
VGE= 7V
13V
0
10
20
30
40
50
4 7 10 13 16
IC (A)
VGE(V)
Fig
3
: Transfer Characteristic
175°C
25°C
-40°C
VCE=20V
0
10
20
30
40
50
60
01234567
IC(A)
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
V
GE
=7V
9V
20V
17
V
15V
11V
13V
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IF(A)
VF(V)
Fig 4: Diode Characteristic
25°C
175°C
-40°C
0
10
20
30
40
50
60
70
01234567
IC(A)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
9V
20V
17
V
15V
11V
VGE= 7V
13V
0
10
20
30
40
50
4 7 10 13 16
IC (A)
VGE(V)
Fig 3: Transfer Characteristic
175°C
25°C
-40°C
0
1
2
3
4
0 25 50 75 100 125 150 175
VCE(sat)
(V)
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=20A
IC=5A
IC=10A
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
5 8 11 14 17 20
Current(A)
Time (µ
µ
µ
µ
S)
VGE (V)
Fig 6: VGE vs. Short Circuit Time
(VCE=400V,TC=25°C )
VCE=20V
0
10
20
30
40
50
60
01234567
IC(A)
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
V
GE
=7V
9V
20V
17
V
15V
11V
13V
Rev.1.0: Nov 2013 www.aosmd.com Page 3 of 9
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AOT10B60D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
10 100 1,000
Ic(A)
VCE (V)
Fig
10
: Reverse Bias SOA
0
3
6
9
12
15
0 4 8 12 16 20
VGE (V)
Qg(nC)
Fig 7: Gate-Charge Characteristics
VCE=480V
IC=10A
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VCE(V)
Fig 8: Capacitance Characteristic
Cies
Cres
Coes
1
10
100
10 100 1,000
Ic(A)
VCE (V)
Fig 10: Reverse Bias SOA
(Tj=175°C,VGE=15V)
0
3
6
9
12
15
0 4 8 12 16 20
VGE (V)
Qg(nC)
Fig 7: Gate-Charge Characteristics
VCE=480V
IC=10A
0
30
60
90
120
150
180
25 50 75 100 125 150 175
Power Disspation
(W)
TCASE(°C)
Fig 11: Power Disspation as a Function of Case
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VCE(V)
Fig 8: Capacitance Characteristic
Cies
Cres
Coes
0
4
8
12
16
20
25 50 75 100 125 150 175
Current rating IC
(A)
TCASE(°C)
Fig 12: Current De-rating
Rev.1.0: Nov 2013 www.aosmd.com Page 4 of 9
ALPIiA & OMEGA SEMICOND UCTDR -v"" ‘ ......;~. ~a—e:
AOT10B60D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
0 5 10 15 20 25
Switching Time (nS)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=30
)
Td(off)
Tf
Td(on)
Tr
1
10
100
1,000
10,000
0 50 100 150 200 250 300 350
Switching Time (nS)
Rg(
)
Figure 14: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=10A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
Switching Time (nS)
Td(off)
Tf
Td(on)
Tr
0
2
4
6
8
10
VGE(TH)(V)
1
10
100
1000
0 5 10 15 20 25
Switching Time (nS)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=30
)
Td(off)
Tf
Td(on)
Tr
1
10
100
1,000
10,000
0 50 100 150 200 250 300 350
Switching Time (nS)
Rg(
)
Figure 14: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=10A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
0 50 100 150 200
Switching Time (nS)
TJ (°C)
Figure 15: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=10A,Rg=30
)
Td(off)
Tf
Td(on)
Tr
0
2
4
6
8
10
0 30 60 90 120 150
VGE(TH)(V)
TJ(°C)
Figure 16: VGE(TH) vs. Tj
Rev.1.0: Nov 2013 www.aosmd.com Page 5 of 9
ALPIlA‘fioMEG/i SEMICONDUCTOR u I I
AOT10B60D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.3
0.6
0.9
1.2
1.5
0 5 10 15 20 25
SwitchIng Energy (mJ)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=30
)
Eoff
Eon
Etotal
0.0
0.3
0.6
0.9
1.2
1.5
0 100 200 300 400
Switching Energy (mJ)
Rg(
)
Figure 18: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=10A)
Eoff
Eon
Etotal
0.2
0.4
0.6
0.8
Switching Energy (mJ)
Eoff
Eon
Etotal
0.2
0.4
0.6
0.8
1.0
Switching Energ y (mJ)
Eoff
Eon
Etotal
0
0.3
0.6
0.9
1.2
1.5
0 5 10 15 20 25
SwitchIng Energy (mJ)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=30
)
Eoff
Eon
Etotal
0.0
0.3
0.6
0.9
1.2
1.5
0 100 200 300 400
Switching Energy (mJ)
Rg(
)
Figure 18: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=10A)
Eoff
Eon
Etotal
0
0.2
0.4
0.6
0.8
0 25 50 75 100 125 150 175 200
Switching Energy (mJ)
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=10A,Rg=30
)
Eoff
Eon
Etotal
0.0
0.2
0.4
0.6
0.8
1.0
200 250 300 350 400 450 500
Switching Energ y (mJ)
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=10A,Rg=30
)
Eoff
Eon
Etotal
Rev.1.0: Nov 2013 www.aosmd.com Page 6 of 9
ALPIlA‘fioMEG/i SEMICONDUCTOR
AOT10B60D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
12
0
50
100
150
200
250
300
0
5
10
15
20
25
S
Trr (nS)
175°C
25°C
175°C
25°C
Trr
S
0
10
20
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
I
rm
(A)
Qrr (nC)
25°C
175°C
175°C
25°C
Qrr
Irm
13V
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 25 50 75 100 125 150 175 200
ICE(S) (A)
Temperature (°C )
Fig 21: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=600V
VCE=400V
0.2
0.7
1.2
1.7
2.2
0 25 50 75 100 125 150 175 200
VSD (V)
Temperature (°C )
Fig 22: Diode Forward voltage vs. Junction
Temperature
15A
10
A
5A
IF=1A
0
2
4
6
8
10
12
0
50
100
150
200
250
300
0 5 10 15 20 25
S
Trr (nS)
IS(A)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µµ
µs)
175°C
25°C
175°C
25°C
Trr
S
0
10
20
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25
I
rm
(A)
Qrr (nC)
IF(A)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µµ
µs)
25°C
175°C
175°C
25°C
Qrr
Irm
13V
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 25 50 75 100 125 150 175 200
ICE(S) (A)
Temperature (°C )
Fig 21: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=600V
VCE=400V
0.2
0.7
1.2
1.7
2.2
0 25 50 75 100 125 150 175 200
VSD (V)
Temperature (°C )
Fig 22: Diode Forward voltage vs. Junction
Temperature
15A
10
A
5A
IF=1A
0
4
8
12
16
20
0
40
80
120
160
200
100 200 300 400 500 600 700 800 900
S
Trr (nS)
di/dt (A/µ
µµ
µS)
Fig 26: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
25
°
C
175°C
25°C
175°C
Trr
S
0
10
20
30
40
50
60
70
80
0
100
200
300
400
500
600
700
800
100 200 300 400 500 600 700 800 900
I
rm
(A)
Qrr (nC)
di/dt (A/µ
µµ
µS)
Fig 25: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
175°C
25°C175°C
25°C
Qrr
Irm
Rev.1.0: Nov 2013 www.aosmd.com Page 7 of 9
ALPHA&0MEGA SEMICONDUCTOR
AOT10B60D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.92°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1
E
-
05
0
.
0001
0
.
001
0
.
01
0.1
1
10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.92°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 28: Normalized Maximum Transient Thermal Impedance for Diode
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Rev.1.0: Nov 2013 www.aosmd.com Page 8 of 9
ALPHA S: OMEGA SEMICONDUCTOR Gate Charge Test Circuit & Waveform DUT ‘ —£§m—‘ Veg-L Inductive Switching Test Cimuil & Wavefolms DUT '° man R9 2|: Vge J'LI'L we Vce Diode Recovery Test Circuit 8. Waveforms Vga Vge 10v —.. Gate Charge mw. Vge mm. 7 mm In _ MI: W: WW mm V99 7 Man T «m x, 7 mug. \Ige mm. In 1x1: Vce “v:- t,,=x,‘z b 0,, Q _+a b Vce
AOT10B60D
Rev.1.0: Nov 2013 www.aosmd.com Page 9 of 9

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