FMMT455 Datasheet by Diodes Incorporated

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ISSUE 3 - FEBRUARV I996 ABSOLUTE MAXIMUM RA'I1NGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3  FEBRUARY 1996
FEATURES
* 140 Volt VCEO
* 1 Amp continuous current
*P
tot= 500 mW
PARTMARKING DETAIL  455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 140 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Base Current IB200 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 160 V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 140 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB
=140V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.7 V IC=150mA, IB=15mA
Static Forward Current
Transfer Ratio
hFE 100
10 Typ
300 IC=150mA, VCE
=10V*
IC=1A, VCE
=10V*
Transition
Frequency
fT100 MHz IC=50mA, VCE
=10V
f=100MHz
Output Capacitance Cobo 15 pF VCB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
FMMT455
SOT23
C
B
E
FMMT455
3 - 1103 - 111
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I- Collector Current (Amps)
V - (Volts)
I- Collector Current (Amps) I- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain (%)
V - (Volts)
V - (Volts)
Typical Switching Speeds
I- Collector Current (Amps)
Switching time
10
1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
1100.1
0.1
100
0.01 µ
1000
0.001
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SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3  FEBRUARY 1996
FEATURES
* 140 Volt VCEO
* 1 Amp continuous current
*P
tot= 500 mW
PARTMARKING DETAIL  455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 140 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Base Current IB200 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 160 V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 140 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB
=140V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.7 V IC=150mA, IB=15mA
Static Forward Current
Transfer Ratio
hFE 100
10 Typ
300 IC=150mA, VCE
=10V*
IC=1A, VCE
=10V*
Transition
Frequency
fT100 MHz IC=50mA, VCE
=10V
f=100MHz
Output Capacitance Cobo 15 pF VCB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
FMMT455
SOT23
C
B
E
FMMT455
3 - 1103 - 111
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I- Collector Current (Amps)
V - (Volts)
I- Collector Current (Amps) I- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain (%)
V - (Volts)
V - (Volts)
Typical Switching Speeds
I- Collector Current (Amps)
Switching time
10
1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
1100.1
0.1
100
0.01 µ
1000
0.001

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