1N6461-6468US Datasheet by Microsemi Corporation

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I o Microsemi ’M Qualified Levels e htlQ://va.microsemi.com Bart nomenclature MicroNole 050 ee llgure 4 Also available in ( IE mam -1N6463 MSG - Lawrence MSG - Ireland www.micrcsemi.com
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 1 of 6
1N6461US – 1N6468US
Available on
commercial
versions
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded
packages for thru-hole mounting.
“B” SQ-MELF
Package
Also available in:
“B” Package
(axial leaded)
1N6461 - 1N6468
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.
Available as 500 watt peak pulse power (PPP).
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal “Category 1metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
(See part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Military and other high-reliability applications.
Extremely robust construction.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Protection from secondary effects of lightning per select levels in IEC61000-4-5.
Square-end-cap terminals for easy placement.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +175
oC
Thermal Resistance, Junction to Endcap
RӨJEC
20
ºC/W
Forward Surge Current @ 8.3 ms half-sine
IFSM
80
A
Forward Voltage @ 1 Amp
VF
1.5
V
Peak Pulse Power @ 10/1000 µs PPP 500 W
Reverse Power Dissipation (1)
PR
2.5
W
Solder Temperature @ 10 s
260
oC
Notes: 1. Derate at 50 mW/oC (see figure 4).
MSC Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
W Reliability Level RoHS Comnliance available on commercial rade onl MELF P—achkae JEDECt e number E—lemricai Charamerislics
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 2 of 6
1N6461US – 1N6468US
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only.
MARKING: Body paint and part number.
POLARITY: Cathode band.
TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
WEIGHT: Approximately 750 milligrams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N6461 US e3
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
CDS (reference JANS)
Blank = commercial
JEDEC type number
See Electrical Characteristics
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
SYMBOLS & DEFINITIONS
Symbol
Definition
αV(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature expressed in %/°C or mV/°C.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
VWM
Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage
that may be continuously applied over the standard operating temperature.
ID
Standby Current: The current through the device at rated stand-off voltage.
IPP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
VC Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
PPP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of IPP and VC.
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 3 of 6
1N6461US – 1N6468US
ELECTRICAL CHARACTERISTICS
TYPE
MINIMUM
BREAK
DOWN
VOLTAGE
V(BR)
@ I(BR)
BREAKDOWN
CURRENT
I (BR)
RATED
WORKING
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID
@ VRWM
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
MAXIMUM
PEAK IMPULSE
CURRENT
IPP
MAXIMUM
TEMP. COEF.
OF
α
V(BR)
@ 8/20
µs
@ 10/1000
µs
Volts
mA
V (pk)
µA
V (pk)
A (pk)
A (pk)
%/oC
1N6461US
5.6
25
5
3000
9.0
315
56
-0.03, +0.045
1N6462US 6.5 20 6 2500 11.0 258 46 +0.060
1N6463US
13.6
5
12
500
22.6
125
22
+0.085
1N6464US
16.4
5
15
500
26.5
107
19
+0.085
1N6465US 27.0 2 24 50 41.4 69 12 +0.096
1N6466US
33.0
1
30.5
3
47.5
63
11
+0.098
1N6467US
43.7
1
40.3
2
63.5
45
8
+0.101
1N6468US
54.0
1
51.6
2
78.5
35
6
+0.103
100 kW 70 50 Zn 10 kW 70 50 2.0 1.0 kW 07 05 02 0.1kW Iwnsnz 0‘5 1us20 5010us20 5°100us200 sou 1ms 10ms Peak Pulse Power vs Pulse Time __,‘_¢, 100 ! Peak Value lpp / Half Value '%3 50 10x1000 ave farm/ \ as defined by R.E.A. . . . 0 1 2 3 10/1000 gs Current lmgulse Waveform
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 4 of 6
1N6461US – 1N6468US
GRAPHS
Pulse Time (tp)
FIGURE 1
Peak Pulse Power vs Pulse Time
Time (t) in Milliseconds
FIGURE 2
10/1000 µs Current Impulse Waveform
Reverse Peak Pulse Power (PPP) in kW
IPP
Peak Pulse Current - % I
PP
I O Microsemi TEST WAVE FORM PARAMETERS 100 tr = Buses /\\ \ Peak ValueI - \pp | | l / Half Value ”’29 = 1,, 5° / \\ I 8x20 Waveform I I 0 1 0 20 30 40 50 8/20 53 Current Imgulse Waveform 100 50 0 50 100 150 175 Derating Curve
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 5 of 6
1N6461US – 1N6468US
GRAPHS
Time (t) in Milliseconds
FIGURE 3
8/20 µs Current Impulse Waveform
T Temperature - °C
FIGURE 4
Derating Curve
I
PP
Peak Pulse Current - % I
PP
Peak Pulse Power (P
PP
), Current (I
PP
),
And DC Power in Percent of 25°C Rating
ECT BL
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 6 of 6
1N6461US – 1N6468US
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. Dimensions are pre-solider dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
Inch
Millimeters
Min
Max
Min
Max
BD
0.137
0.148
3.48
3.76
BL
0.200
0.225
5.08
5.72
ECT 0.019 0.028 0.48 0.71
S
0.003
---
0.08
---
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be placed
in the center between the pads
as an optional spot for cement.

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