ILD256T Datasheet by Vishay Semiconductor Opto Division

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Vishay Semiconductors
ILD256T
Document Number 83649
Rev. 1.6, 20-Apr-07
www.vishay.com
1
For technical support, please contact: optocoupler.answers@vishay.com
Optocoupler, Phototransistor Output, Dual Channel, AC Input
FEATURES
Each Channel: Guaranteed CTR
Symmetry, 2:1 Maximum
Bidirectional AC Input
SOIC-8 Surface Mountable Package
Isolation Test Voltage, 4000 VRMS
Standard Lead Spacing, 0.05
Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
i179044
1
2
3
4
8
7
6
5
E
C
C
E
A/C
C/A
A/C
C/A
DESCRIPTION
The ILD256T is a dual channel optocoupler. Each
channel consists of two infrared emitters coupled to a
silicon NPN phototransistor detector.
These circuit elements are constructed with a standard
SOIC-8A footprint.
The product is well suited for telecom applications
such as ring detection or off/on hook status, given its
bidirectional LED input and guaranteed current
transfer ratio (CTR) of 20 % at IF = 10 mA.
AGENCY APPROVALS
UL1577, File No. E52744 System Code Y
DIN EN 60747-5-2 (VDE0884)
Available with Option 1
APPLICATIONS
Telecom applications ring detection off/on hook
status
Note:
For additional information on the available options refer to Option Information.
ORDER INFORMATION
PART REMARKS
ILD256T CTR > 20 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Forward continuous current IF30 mA
Power dissipation Pdiss 50 mW
Derate linearly from 25 °C 0.66 mW/°C
OUTPUT
Collector-emitter breakdown
voltage BVCEO 70 V
Emitter-collector breakdown
voltage BVECO 7.0 V
Power dissipation Pdiss 125 mW
Derate linearly from 25 °C 1.67 mW/°C
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Document Number 83649
Rev. 1.6, 20-Apr-07
Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
Note:
1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
Note:
1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note:
1) As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of prodective circuits.
COUPLER
Isolation voltage, input to output t = 1.0 s VISO 4000 VRMS
Total package dissipation
(LED + detector) Ptot 300 mW
Derate linearly from 25 °C 4.0 mW/°C
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Soldering temperature at 260 °C Tsld 10 sec.
ELECTRICAL CHARACTERISTICS1)
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
INPUT
Forward voltage IF = ± 10 mA VF1.2 1.55 V
Reverse current VR = 6.0 V IR0.1 100 mA
OUTPUT
Collector-emitter breakdown voltage IC = 10 µA BVCEO 70 V
Emitter-collector breakdown voltage IE = 10 µA BVECO 7.0 V
Collector-emitter leakage current VCE = 10 V ICEO 5.0 50 nA
COUPLER
Symmetry (CTR at + 10 mA)/(CTR at -10 mA) 0.5 1.0 2.0
Saturation voltage, collector-emitter IF = ± 16 mA, IC = 2.0 mA VCEsat 0.4 V
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
DC Current Transfer Ratio IF = ± 10 mA, VCE = 5.0 V CTRDC 20 %
SAFETY AND INSULATION RATINGS1)
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Climatic classification (according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175 399
VIOTM 6000 V
VIORM 560 V
PSO 350 mW
ISI 150 mA
TSI 165 °C
Creepage 4mm
Clearance 4mm
Insulation thickness, reinforced rated per IEC60950 2.10.5.1 0.2 mm
ABSOLUTE MAXIMUM RATINGS1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
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Document Number 83649
Rev. 1.6, 20-Apr-07
www.vishay.com
3
Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Figure 1. LED Forward Current vs.Forward Voltage
Figure 2. Forward Voltage vs. Forward Current
Figure 3. Peak LED Current vs. Duty Factor, Tau
iil256at_01
- 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5
60
40
20
0
- 20
- 40
- 60
- 55 °C
VF- LED Forward Voltage (V)
I
F
- LED Forward Current (mA)
85 °C
25 °C
iil256at_02
10 100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
A
= - 55 °C
T
A
= 100 °C
T
A
= 25 °C
0.1 1
iil256at_03
10- 6 10- 5 10- 4 10 - 3 10- 2 10- 1 10010 1
10000
1000
100
10
t - LED Pulse Duration (s)
If(pk) - Peak LED Current (mA)
0.005
ˇ
0.05
0.02
0.01
0.1
0.2
0.5
Duty Factor
t
DF = /t
τ
Figure 4. Normalized CTR vs. IF and Tamb
Figure 5. Normalized Saturated CTR
Figure 6. Normalized CTRcb
iil256at_04
10 100
2.0
1.5
1.0
0.5
0.0
I
F
- LED Current (mA)
Normalized CTR
T
A
= 25 °C
T
A
= 50 °C
T
A
= 70 °C
T
A
= 100 °C
Normalized to:
I
F
= 10 mA, V
CE
= 10 V
T
A
= 25 °C
1
0.1
iil256at_05
10 100
1.0
0.8
0.6
0.4
0.2
0.0
I
F
- LED Current (mA)
Normalized CTR
Normalized to:
I
F
= 10 mA, V
CE
= 10 V
T
A
= 25 °C
V
CE(sat)
= 0.4 V
T
A
= 25 °C
T
A
= 50 °C
T
A
= 70 °C
T
A
= 100 °C
0.1 1
iil256at_06
10 100
1.5
1.0
0.5
0.0
T
A
= 25 °C
T
A
= 50 °C
T
A
= 70 °C
I
F
- LED Current (mA)
Normalized CTRcb
Normalized to:
I
F
= 10 mA
0.1 101
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Document Number 83649
Rev. 1.6, 20-Apr-07
Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
Figure 7. Photocurrent vs. LED Current
Figure 8. Base Current vs. IF and HFE
Figure 9. Normalized HFE vs. Base Current and Temp.
iil256at_07
0.1 10 100
1000
100
10
1
0.1
25 °C
70 °C
I
F
- LED Current (mA)
I
CB
- Photocurrent (µA)
1
iil256at_08
1 10 100 1000
700
600
500
400
300
200
100
100
10
1
0.1
IB- Base Current (µA)
HFE - Transistor Gain
I
F
- LED Current (mA)
VCE = 0.4 V
iil256at_09
1 10 100 1000
1.2
1.0
0.8
0.6
0.4
NHFE - 20 °C
NHFE 25 °C
NHFE 50 °C
NHFE 70 °C
IB- Base Current (µA)
Normalized HFE
Normalized to:
IB= 10 µA
VCE = 10
Figure 10. Normalized Saturated HFE vs. Base Current
Figure 11. Base Emitter Voltage vs. Base Current
Figure 12. Collector-Emitter Leakage Current vs.Temp.
iil256at_10
1 10 100 1000
1.5
1.0
0.5
0.0
T
A
= - 20 °C
T
A
= 25 °C
T
A
= 50 °C
T
A
= 70 °C
I
B
- Base Current (µA)
Normalized Saturated HF
Normalized to:
HFE at V
CE
= 10 V
I
CB
= 10 µA
V
CE(sat)
= 0.4 V
iil256at_11
0.4 0.5 0.6 0.7 0.8
1000
100
10
1
0.1
0.01
0.001
VBE - Base Emitter Voltage (V)
IB- Base Current (µA)
iil256at_12
- 20 0 20 40 60 80 100
10
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
-2
T
A
- Ambient Temperature (°C)
I
CEO
- Collector Emitter (nA)
T
ypical
V
CE
= 10 V
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Document Number 83649
Rev. 1.6, 20-Apr-07
www.vishay.com
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Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
PACKAGE DIMENSIONS in inches (millimeters)
0.036 (0.91)
0.014 (0.36)
0.170 (4.32) 0.045 (1.14)
0.260 (6.6)
R 0.010 (0.13)
0.050 (1.27)
i178020
ISO Method A
4
0.240
(6.10)
0.050 (1.27) Typ.
0.016 (0.41)
0.004 (0.10)
0.008(0.20)
Lead coplanarity
± 0.001 Max.
0.008(0.20)
0.120 ± 0.002
(3.05 ± 0.05)
CL
R0.010
(0.25) Max.
0.040 (1.02)
5° Max.
Pin One I.D.
0.154 ± 0.002
(3.91 ± 0.05)
0.015 ± 0.002
(0.38 ± 0.05)
0.230 ± 0.002
(5.84 ± 0.05)
0.020 ± 0.004
(0.51 ± 0.10)
2 Plcs.
0.0585 ± 0.002
(1.49 ± 0.05)
0.125 ± 0.002
(3.18 ± 0.05)
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6
Document Number 83649
Rev. 1.6, 20-Apr-07
Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Revision: 01-Jan-2019 1Document Number: 91000
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