BPW76 Datasheet by Vishay Semiconductor Opto Division

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RoHS COMPUANY deteclonechsuggon @v‘shayfiom
Silicon NPN Phototransistor, RoHS Compliant
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81526
398 Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Vishay Semiconductors
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
FEATURES
Package type: leaded
Package form: TO-18
Dimensions (in mm): Ø 4.7
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 40°
Base terminal connected
Hermetically sealed package
Flat glass window
Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8401
PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm)
BPW76A 0.4 to 0.8 ± 40 450 to 1080
BPW76B > 0.6 ± 40 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW76A Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18
BPW76B Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector base voltage VCBO 80 V
Collector emitter voltage VCEO 70 V
Emitter base voltage VEBO 5V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Total power dissipation Tamb 25 °C PV250 mW
Junction temperature Tj125 °C
Operating temperature range Tamb - 40 to + 125 °C
Storage temperature range Tstg - 40 to + 125 °C
Soldering temperature t 5 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 400 K/W
Thermal resistance junction/case RthJC 150 K/W
— VISHAYJ V detectorlechsuggon@vxshay com
Document Number: 81526 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.4, 08-Sep-08 399
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
0 25 50 75 100
0
200
400
800
150
94 8342
600
125
R
thJC
R
thJA
T
amb
- Ambient Temperature (°C)
P - Total Power Dissipation (mW)
tot
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1 100 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 6pF
Angle of half sensitivity ϕ± 40 deg
Wavelength of peak sensitivity λp850 nm
Range of spectral bandwidth λ0.1 450 to
1080 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 0.3 V
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ωton s
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ωtoff s
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ωfc110 kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Collector light current Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
BPW76A Ica 0.4 0.8 mA
BPW76B Ica 0.6 mA
94 8343
20
10
0
10
1
10
2
10
3
10
4
10
6
10
5
150
50 100
V
CE
= 20 V
E=0
I - Collector Dark Current (nA)
CEO
T
amb
- Ambient Temperature (°C)
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0 1020304050607080 90 100
94 8344
V= 5V
λ = 950 nm
CE
E
e
= 1 mW/cm
2
I - Relative Collector Current
ca rel
T
amb
- Ambient Temperature (°C)
1 mw/cmE o 5 mW/cm2 u 2 mw/cmE ,1 mW/cm2 0.05 mw/cm2 VISHAY.» deteclonechsuggon @wshay.com
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81526
400 Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.001
0.01
0.1
1
10
10
94 8345
VCE = 5 V
λ = 950 nm
I - Collector Light Current (mA)
ca
Ee- Irradiance (mW/cm2)
0.1 1 10
0.01
0.1
1
I - Collector Light Current (mA)
ca
V
CE
- Collector Emitter Voltage (V)
100
94 8346
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
BPW76A
λ= 950 nm
0.1 1 10
0
4
8
12
16
20
C
CEO
- Collector Ermitter Capacitance (pF)
V
CE
- Collector Ermitter Voltage (V)
100
94 8247
f = 1 MHz
1612
840
94 8253
0
2
4
6
8
12
ton/toff - Turn-on/Turn-off Time (µs)
IC - Collector Current (mA)
10 VCE = 5 V
RL = 100 Ω
λ = 950 nm
toff
ton
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S (λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
94 8348
800
0.4 0.2 0 0.2 0.4
S - Relative Sensitivity
rel
0.6
94 8347
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
8
0.7
1.0
— VISHAYn V detectortechsuggon @vlshay com
Document Number: 81526 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.4, 08-Sep-08 401
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
CE
0.45
3.9
± 0.15
± 0.25
± 0.7
± 0.05
- 0.1
+ 0.05
- 0.05
+ 0.02
B
Chip position
Drawing-No.: 6.503-5004.01-4
specifications
according to DIN
technical drawings
Issue:1; 01.07.96
(2.5)
Ø 4.7
13.2
5.2
5.5
2.54 nom.
Lens
96 12175
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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