BPW21R Datasheet by Vishay Semiconductor Opto Division

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VISHAY. “\\ ® ROHS cowum I: demclanechsupgorwwshay com www.mshay com/605791000
BPW21R
www.vishay.com Vishay Semiconductors
Rev. 1.7, 23-Nov-11 1Document Number: 81519
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon Photodiode
DESCRIPTION
BPW21R is a planar Silicon PN photodiode in a hermetically
sealed short TO-5 case, especially designed for high
precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
The device is equipped with a flat glass window with built in
color correction filter, giving an approximation to the
spectral response of the human eye.
FEATURES
Package type: leaded
Package form: TO-5
Dimensions (in mm): Ø 8.13
Radiant sensitive area (in mm2): 7.5
High photo sensitivity
Adapted to human eye responsivity
Angle of half sensitivity: ϕ = ± 50°
Hermetically sealed package
Cathode connected to package
Flat glass window
Low dark current
High shunt resistance
High linearity
Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
Sensor in exposure and color measuring purposes
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8394
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
BPW21R 9 ± 50 420 to 675
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW21R Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR10 V
Power dissipation Tamb 50 °C PV300 mW
Junction temperature Tj125 °C
Operating temperature range Tamb - 40 to + 125 °C
Storage temperature range Tstg - 40 to + 125 °C
Soldering temperature t 5 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 R
thJA 250 K/W
VISHAY. L de:ectartechsupgon@wshay com www.mshay com/d05791000
BPW21R
www.vishay.com Vishay Semiconductors
Rev. 1.7, 23-Nov-11 2Document Number: 81519
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF1.0 1.3 V
Breakdown voltage IR = 20 μA, E = 0 V(BR) 10 V
Reverse dark current VR = 5 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD1.2 nF
VR = 5 V, f = 1 MHz, E = 0 CD400 pF
Dark resistance VR = 10 mV RD38 GΩ
Open circuit voltage EA = 1 klx Vo280 450 mV
Temperature coefficient of VoEA = 1 klx TKVo - 2 mV/K
Short circuit current EA = 1 klx Ik4.5 9 μA
Temperature coefficient of IKEA = 1 klx TKIk - 0.05 %/K
Reverse light current EA = 1 klx, VR = 5 V Ira 4.5 9 μA
Sensitivity VR = 5 V, EA = 10-2 to 105 lx S 9 nA/Ix
Angle of half sensitivity ϕ± 50 deg
Wavelength of peak sensitivity λp565 nm
Range of spectral bandwidth λ0.5 420 to 675 nm
Rise time VR = 0 V, RL = 1 kΩ, λ = 660 nm tr3.1 μs
Fall time VR = 0 V, RL = 1 kΩ, λ = 660 nm tf3.0 μs
40 60 80 120
10020
I - Reverse Dark Current (nA)
ro
94 8468
10
10
1
10
2
10
3
10
4
V
R
=5V
T
amb
- Ambient Temperature (°C)
020406080
0.8
0.9
1.0
1.1
1.3
120
1.2
100
94 8738
T
amb
- Ambient Temperature
I
ra rel
- RelativeReverse Light Current
VISHAY. I: demcmnechsupgonmwshay com www.mshay com/605791000
BPW21R
www.vishay.com Vishay Semiconductors
Rev. 1.7, 23-Nov-11 3Document Number: 81519
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Short Circuit Current vs. Illuminance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
94 8476
100
10-2 10-1 101102103104
100
10-1
10-2
10-3
10-4
101
102
105106
103
EA - Illuminance (lx)
IK - Short Circuit Current (µA)
0
400
600
800
1200
1400
1000
200
0.1 101
C - Diode Capacitance (pF)
D
100
94 8473
E=0
f=1MHz
V
R
- Reverse Voltage (V)
350 450 550 650
0
0.2
0.4
0.6
0.8
1.0
750
94 8477
VλEye
λ - Wavelength (nm)
S (λ)rel - Relative Spectral Sensitivity
0.4 0.2 0
94 8475
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S - Relative Sensitivity
rel
ϕ - Angular Displacement
VISHAY. VF) I: demclonechsuggormwshay com www.mshay com/d05791000
BPW21R
www.vishay.com Vishay Semiconductors
Rev. 1.7, 23-Nov-11 4Document Number: 81519
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
-
+
5.08 nom.
Ø 8.13
Ø 5.9
Ø 0.45
- 1 ± 0.2
± 0.1
- 0.05
+ 0.02
± 0.1
Chip position
± 0.1
9.1
Issue:1; 01.07.96
Drawing-No.: 6.511-5002.01-4
specifications
according to DIN
technical drawings
(1.65)
14 3.1
96 12181
— VISHAY. V
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Revision: 01-Jan-2021 1Document Number: 91000
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