MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3 Datasheet by ON Semiconductor

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MMUN21 1 1 L, TA1 14EE, NSBA1 14EF3 sistors (BRT) 32 = 10 k9 ith Monolithic Bias transistors s designed to replace a single tor bta network. The Bias Re iltgle tran stor with a monolithic network co ing of two resistorsu a en base resistor and a base— emitter re or. The BRT eliminate these individual components by integrating thent into a single device. The use of a BRT can reduce both S) stem cost and board space. Features - Simplifies circuit Design - Reduces Board Space I Reduces Component Count - s and NSV Prefix tor Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECVQIOI Qualified and PFAP Capable I These Devices are Pb—Free, Halogen Free/BFR Free and are ROHS Complianl MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unil Colleciarrfiase Voltage VCEO 50 Vde ColleciapEmtflet Voltage VCEO 50 Vde Collector Current 7 Contlrluous It; 100 mAdc lrlpul Forward Voltage VlMMd) 40 Vde lrlpul Reverse Voltage VMEV) to Vde Stresses exceedlng those llsied in the Maxlmum Ratings iable may damage the device. It any at these limits are exceeded. devlce tuhctiorrality should not be assumed. damage may occur and rellablllly may be attected. o Semlcunduclur Cnmpunenls lnduslltes. LLC 2mm I July, 2018 — Rev. 9 0N Semiconductor® www.0nsemi.com PIN t BASE . (lNPUT) m w xx M- i @ ‘El—ET Q XTM Q 4
© Semiconductor Components Industries, LLC, 2000
July, 2018 − Rev. 9 1Publication Order Number:
DTA114E/D
MUN2111, MMUN2111L,
MUN5111, DTA114EE,
DTA114EM3, NSBA114EF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 10 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Base Voltage VCBO 50 Vdc
Collector−Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet
.
ORDERING INFORMATION
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SC−75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−59
CASE 318D
STYLE 1
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
PIN CONNECTIONS
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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2
Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping
MUN2111T1G, SMUN2111T1G 6A SC−59
(Pb−Free) 3000 / Tape & Reel
SMUN2111T3G 6A SC−59
(Pb−Free) 10000 / Tape & Reel
MMUN2111LT1G, SMMUN2111LT1G A6A SOT−23
(Pb−Free) 3000 / Tape & Reel
MMUN2111LT3G, SMMUN2111LT3G A6A SOT−23
(Pb−Free) 10000 / Tape & Reel
MUN5111T1G, SMUN5111T1G 6A SC−70/SOT−323
(Pb−Free) 3000 / Tape & Reel
DTA114EET1G, NSVDTA114EET1G 6A SC−75
(Pb−Free) 3000 / Tape & Reel
DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT−723
(Pb−Free) 8000 / Tape & Reel
NSBA114EF3T5G F SOT−1123
(Pb−Free) 8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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3
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2111)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD230
338
1.8
2.7
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 540
370
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 264
287
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD246
400
2.0
3.2
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 508
311
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 174
208
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD202
310
1.6
2.5
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 618
403
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 280
332
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−75) (DTA114EE)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD200
300
1.6
2.4
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 600
400
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD260
600
2.0
4.8
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 480
205
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBA114EF3)
Total Device Dissipation
TA = 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
PD254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4) RqJA 493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3) RqJL 193 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0) ICBO − 100 nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0) ICEO − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0) IEBO 0.5 mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0) V(BR)CBO 50 − Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V) hFE 35 60
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA) VCE(sat) − 0.25 Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA) Vi(off) 1.2 0.8 Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 10 mA) Vi(on) 2.5 1.8 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)VOL − 0.2 Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)VOH 4.9 − Vdc
Input Resistor R1 7.0 10 13 kW
Resistor Ratio R1/R20.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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TYPICAL CHARACTERISTICS
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (V)
TA= −25°C
25°C
123456789
0.01 20
IC, COLLECTOR CURRENT (mA)
0.1
1
0406080
1000
11010
0
IC, COLLECTOR CURRENT (mA)
TA=75°C
−25°C
100
10
75°C
50
010203040
10
3
1
2
VR, REVERSE VOLTAGE (V)
0
TA= −25°C25°C
75°C
f = 10 kHz
lE = 0 A
TA = 25°C
VO = 5 V
IC/IB=10 VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA= −25°C
25°C
75°C
Figure 2. VCE(sat) vs. ICFigure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
25°C
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
hFE, DC CURRENT GAIN
10
C
ob
, OUTPUT CAPACITANCE (pF)
4
7
5
6
8
9
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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TYPICAL CHARACTERISTICS − NSBA114EF3
Figure 7. VCE(sat) vs. ICFigure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100100.1
1
10
100
1000
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
50403020100
0
1
2
3
4
6
7
65843210
0.1
1
10
100
Figure 11. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
hFE, DC CURRENT GAIN
Cob, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C
VCE = 10 V
150°C
−55°C
25°C
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
150°C
−55°C
25°C
VO = 0.2 V
150°C
−55°C
25°C
0.01
5
7
1
T fir www.0nsemi.com :uo muse mm mm
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
T {Er , i a3 69 020(oons)® D i [T way UL E:D
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE G
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70 0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
+D~> 4k www.0nsemi.com
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PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 Y
2X
E
12
3
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
BOT 1:155 Ti \ 11737425; ‘ T
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
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PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN MAX
MILLIMETERS
A0.34 0.40
b0.15 0.28
c0.07 0.17
D0.75 0.85
E0.55 0.65
0.95 1.05
L0.185 REF
HE
D
E
c
A
−Y−
−X−
HE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e
b1 0.10 0.20
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
0.35 0.40
TOP VIEW
SIDE VIEW
3X
BOTTOM VIEW
L2
L
3X
DIMENSIONS: MILLIMETERS
1.20
2X
0.26
3X 0.34
PACKAGE
OUTLINE
b
2X b1
e
0.08 XY
L2 0.05 0.15
0.20
0.38
1
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