AOx(F)42S60 Datasheet by Alpha & Omega Semiconductor Inc.

View All Related Products | Download PDF Datasheet
W SEMICOND UCTOR W G“??? Exofi} AOT42560L A0342560L
AOT42S60L/AOB42S60L
600V 37A
α
MOS
TM
Power Transistor
General Description Product Summary
V
DS
@ T
j,max
700V
I
DM
166A
R
DS(ON),max
0.109
Q
g,typ
40nC
E
oss
@ 400V 9.2µJ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
100
Units
V/ns
Maximum Junction-to-Ambient
A,D
300
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
°C
65
0.5
-55 to 150
°C/W
W/
o
C
°C
Thermal Characteristics
Maximum Junction-to-Case
°C/W
Derate above 25
o
C
Parameter
°C/W
Maximum Case-to-sink
A
Gate-Source Voltage
37
23
600
AOT42S60L/AOB42S60L
Continuous Drain
Current
T
C
=25°C I
D
±30
The AOT42S60L & AOB42S60L have been fabricated
using the advanced αMOS
TM
high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these devices can be
adopted quickly into new and existing offline power supply
designs.
V
UnitsParameter
A
Drain-Source Voltage
Orderable Part Number Package Type Form Minimum Order Quantity
V
A
166
T
C
=100°C
Pulsed Drain Current
C
0.3
3.3
P
D
Repetitive avalanche energy
C
AOT42S60L/AOB42S60L
Avalanche Current
C
Junction and Storage Temperature Range
T
C
=25°C
dv/dt
Power Dissipation
B
Single pulsed avalanche energy
G
20
A11
W
mJ
mJ
234
1345
417
AOT42S60L TO-220 Green Tube 1000
AOB42S60L TO-263 Green Tape & Reel 800
G
D
S
TO-263
D2PAK
S
G
Top View
GD
S
TO-220
AOT42S60L
AOB42S60L
D
D
Rev5.0: Sepetember 2017
www.aosmd.com Page 1 of 6
ALPHA& OMEGA S [CONDUCTOR
Symbol Min Typ Max Units
600 - -
650 700 -
- - 1
- 10 -
I
GSS
Gate-Body leakage current - - ±100 nΑ
V
GS(th)
Gate Threshold Voltage 2.5 3.2 3.8 V
- 0.095 0.109
- 0.27 0.31
V
SD
- 0.84 - V
I
S
Maximum Body-Diode Continuous Current - - 37 A
I
SM
- - 166 A
C
iss
- 2154 - pF
C
oss
- 135 - pF
C
o(er)
- 103 - pF
C
o(tr)
- 344 - pF
C
rss
- 2.7 - pF
R
g
- 1.7 -
Q
g
- 40 - nC
Q
gs
- 11.7 - nC
Q
gd
- 11.9 - nC
t
D(on)
- 38.5 - ns
t
r
- 53 - ns
t
D(off)
- 136 - ns
t
f
- 46 - ns
t
rr
- 473 - ns
I
rm
- 38.5 - A
Q
rr
- 10.5 -µC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=100V, f=1MHz
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
D
=250µA, V
GS
=0V, T
J
=150°C
Effective output capacitance, energy
related
H
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
SWITCHING PARAMETERS
I
DSS
Effective output capacitance, time
related
I
R
DS(ON)
Static Drain-Source On-Resistance
I
S
=21A,V
GS
=0V, T
J
=25°C
Diode Forward Voltage
Input Capacitance V
GS
=0V, V
DS
=100V, f=1MHz
Output Capacitance
I
F
=21A,dI/dt=100A/µs,V
DS
=400V
Reverse Transfer Capacitance
BV
DSS
V
GS
=10V, V
DS
=400V, I
D
=21A,
R
G
=25
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=21A
Gate Source Charge
Gate Drain Charge
V
GS
=10V, I
D
=21A, T
J
=25°C
V
DS
=480V, T
J
=150°C
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Charge I
F
=21A,dI/dt=100A/µs,V
DS
=400V
Maximum Body-Diode Pulsed Current
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current I
F
=21A,dI/dt=100A/µs,V
DS
=400V
V
V
GS
=10V, I
D
=21A, T
J
=150°C
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
µA
V
DS
=0V, V
GS
=±30V
V
DS
=600V, V
GS
=0V
V
DS
=5V,I
D
=250µA
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
Rev5.0: Sepetember 2017 www.aosmd.com Page 2 of 6
ALPHA&0MEGA SEMICONDUC ‘OR TYPICAL ELECTRICAL AND THERMAL CHARACTERIST
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
70
80
0 5 10 15 20
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics@25°C
V
GS
=4.5V
6V
10V 7V
0.01
0.1
1
10
100
1000
2 3 4 5 6 7 8 9 10
ID(A)
VGS(Volts)
Figure 3: Transfer Characteristics
-
55
°
C
VDS=20V
25°C
125°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 15 30 45 60 75 90
RDS(ON) ()
ID(A)
Figure 4: On-Resistance vs. Drain Current and Gate
Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
VGS=10V
I
D
=21A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 6: Break Down vs. Junction Temperature
0
10
20
30
40
50
60
0 5 10 15 20
ID(A)
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
V
GS
=4.5V
5V
10V
6V
5V
5.5V
5.5V
7V
Rev5.0: Sepetember 2017 www.aosmd.com Page 3 of 6
ALPHA&0MEGA SEMICONDUCTOR TYPICAL ELECTRICAL AND THERMAL CHARACTERIS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)42S60L(Note F)
10µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
0
3
6
9
12
15
0 15 30 45 60
VGS (Volts)
Qg(nC)
Figure 8: Gate-Charge Characteristics
VDS=480V
ID=21A
1
10
100
1000
10000
0 100 200 300 400 500 600
Capacitance (pF)
VDS (Volts)
Figure 9: Capacitance Characteristics
Ciss
Coss
C
rss
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
25°C
125°C
0
4
8
12
16
20
0 100 200 300 400 500 600
Eoss(uJ)
VDS (Volts)
Figure 10: Coss stored Energy
Eoss
Rev5.0: Sepetember 2017 www.aosmd.com Page 4 of 6
ALPHA&0MEGA SEMICONDUCTOR
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note B)
0
300
600
900
1200
1500
25 50 75 100 125 150 175
EAS(mJ)
TCASE (°C)
Figure 12: Avalanche energy
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)42S60L(Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
T
on
T
P
D
Rev5.0: Sepetember 2017 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Tes t Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev5.0: Sepetember 2017 www.aosmd.com Page 6 of 6

Products related to this Datasheet

MOSFET N-CH 600V 39A TO220
MOSFET N-CH 600V 37A TO263