STD20NF20, STF20NF20, STP20NF20

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December 2009 Doc ID 13154 Rev 4 1/15
15
STD20NF20
STF20NF20, STP20NF20
N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FP
low gate charge STripFET™ Power MOSFET
Features
Exceptional dv/dt capability
Low gate charge
100% avalanche tested
Application
Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Figure 1. Internal schematic diagram
Type VDSS RDS(on) IDPW
STD20NF20 200 V < 0.125 18 A 110 W
STF20NF20 200 V < 0.125 18 A 30 W
STP20NF20 200 V < 0.125 18 A 110 W 12
3
123
1
3
TO-220FP TO-220
DPAK
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STD20NF20 20NF20 DPAK Tape and reel
STF20NF20 20NF20 TO-220FP Tube
STP20NF20 20NF20 TO-220 Tube
www.st.com
Contents STD20NF20, STF20NF20, STP20NF20
2/15 Doc ID 13154 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD20NF20, STF20NF20, STP20NF20 Electrical ratings
Doc ID 13154 Rev 4 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220, DPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 200 V
VGS Gate- source voltage ± 20 V
IDDrain current (continuous) at TC = 25 °C 18 A
IDDrain current (continuous) at TC = 100 °C 11 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 72 A
PTOT Total dissipation at TC = 25 °C 110 30 W
Derating factor 0.72 0.2 W/°C
dv/dt (2)
2. ISD 18 A, di/dt 400 A/µs, VDD V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; Tc = 25 °C)
2500 V
Tstg Storage temperature -55 to 175 °C
TjMax. operating junction temperature
Table 3. Thermal data
Symbol Parameter TO-220 DPAK TO-220FP Unit
Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 (1)
1. When mounted on 1inch² FR-4, 2 Oz copper board.
62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max) 18 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 110 mJ
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
4/15 Doc ID 13154 Rev 4
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 200 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 10 A 0.10 0.125
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance VDS = 25 V, ID= 10 A - 13 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
940
197
30
pF
pF
pF
td(on)
tr
td(off)
tr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100 V, ID = 10 A,
RG= 4.7 VGS = 10 V
(see Figure 15)
-
15
30
40
10
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 160 V, ID = 20 A,
VGS = 10 V
(see Figure 16)
-
28
5.6
14.5
39 nC
nC
nC
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics
Doc ID 13154 Rev 4 5/15
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
-18
72
A
A
VSD(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage ISD = 20 A, VGS = 0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100A/µs
VDD = 50 V
(see Figure 20)
-
155
775
10
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 20)
-
183
1061
11.6
ns
nC
A
mam sumo m" 0.05 0.01 S‘NGLE PULSE In" An 1 z . 2A.. ‘04 m" to“ 10‘ m2 mlvnsM m’5 m" 10’3 m” 10".,(5) Hvzasn 651mm W) n=I7§-c Yn=25'c Smgl- mm 10’ 10" 10° 10‘ 1 103 W15") v.05 0.02 0.01 1m : k Rom—a ‘sweLE PULSE ‘5: 'P/7 M 'V L 10" m” ‘0’2 m" 10“»(5) Hvaznu |n(A) 60 45 30 IS 5 25 Vns(V) Hvzuss MA) so 45 so 15 0 2 A s B v§(v)
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
6/15 Doc ID 13154 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
DPAK
Figure 3. Thermal impedance area for TO-220,
DPAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Transfer characteristics
mm a Rnsm) (n) / 0.104 0.100 0.095 0.092 5 w ‘5 20 |D(A) Hvzuuu Hvzma VGs(V) 0020 11 2000 m 1500 a mac 5 500 4 2 o 5 I0 ‘5 20 25 sooflnc) 0 m 20 30 40 WSW)
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics
Doc ID 13154 Rev 4 7/15
Figure 8. Transconductance Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
G
FS
13
11
9
739I
D
(A)
(S)
612
15
T
J
=-50°C
T
J
=25°C
T
J
=175°C
18
15
17
19
AM03979v1
V
GS(th)
0.90
0.60
0.50
0.40
-50 0T
J
(°C)
(norm)
1.10
50 100 150
0.70
0.80
1.00
AM03980v1
R
DS(on)
2.4
1.0
0.6
-50 0T
J
(°C)
(norm)
50 100 150
0.8
1.6
1.2
1.4
2.2
1.8
2.0
AM03981v1
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
8/15 Doc ID 13154 Rev 4
Figure 14. Source-drain diode forward
characteristics
V
SD
39I
SD
(A)
(V)
618
12 15
0.5
0.6
0.7
0.8
0.9
T
J
=-50°C
T
J
=25°C
T
J
=175°C
AM03982v1
AMUMEM Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive Ioa circuit q if? D 7 A 7 E} m “F “F Van AanLM Figure 19. Unclamped inductive waveform Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Test circuits
Doc ID 13154 Rev 4 9/15
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47k1k
47k
2.7k
1k
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD20NF20, STF20NF20, STP20NF20
10/15 Doc ID 13154 Rev 4
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
aP -r. « [2 (x3) 4J1
STD20NF20, STF20NF20, STP20NF20 Package mechanical data
Doc ID 13154 Rev 4 11/15
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
THERMAL my
Package mechanical data STD20NF20, STF20NF20, STP20NF20
12/15 Doc ID 13154 Rev 4
DIM. mm.
.xampyt.nim
04.202.2A
01.109.01A
32.030.02A
09.046.0b
04.502.54b
06.054.0c
06.084.02c
02.600.6D
01.51D
06.604
.6E
07.41E
82.2e
06.404.41e
01.0153.9H
1L
08.21L
08.02L
106.04L
02.0R
V2 0 o8 o
TO-252 (DPAK) mechanical data
0068772_G
e7 13 30 176 2.3 6.7 ,,,,,7,7,7,7,7, _ 2.3 1.6 An mm mm Access he‘s ’ ‘ T 17 ~77 a‘s‘oHocauon C; l A N I M radms Tans m 6 measured m Com m m M, mp9 mu ' 25mm mm wwdm mmmmmmam - 50 D » FFZ » rpa‘ lo‘evanceuntaw r « ‘ ”702mm tap \ w x 51 com ‘ w; W o o g , ‘ ”Y B‘[ sq .‘ «A w ‘ \ L WWW cm, hue w. mm m nawly “mm Rmm FEED minnow Bending yam-As
STD20NF20, STF20NF20, STP20NF20 Packaging mechanical data
Doc ID 13154 Rev 4 13/15
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Revision history STD20NF20, STF20NF20, STP20NF20
14/15 Doc ID 13154 Rev 4
6 Revision history
Table 8. Revision history
Date Revision Changes
25-Jan-2007 1 First release
20-Mar-2007 2 Typo mistake in first page (order codes)
27-Apr-2007 3 Updates on Table 6: Dynamic
10-Dec-2009 4 Modified device summary on first page
STD20NF20, STF20NF20, STP20NF20
Doc ID 13154 Rev 4 15/15
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