39“.!!! ‘L Data Sheet 4% E * Md E JLM‘JHL “7 www.mhrrmom
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Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures zDimensions(Unit : mm)
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
IC / IB = 2A / 0.1A
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
40 V
V
V
A (DC)
W
W
°C
°C
20
6
3
A (Pulse)5
0.5
2
1
2
150
55 to +150
Symbol Limits Unit
1 Single pulse Pw=10ms
2 Mounted on a 40
×
40
×
0.7mm Ceramic substrate.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
20
6
120
0.2
290
25
0.1
0.1
560
0.5
VI
C=50
µ
A
IC=1mA
IE=50
µ
A
VCB=30V
VEB=5V
VCE=2V, IC=0.1A
IC/IB=2A/0.1A
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
V
V
µ
A
µ
A
V
MHz
pF
Typ. Max. Unit Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
2SD2150
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
0.1
+0.2
0.05
+0.1
0.1
+0.2
+0.2
0.1
(3)(2)(1)
1.0±0.2
4.0±0.3
0.5±0.1
2.5
3.0±0.2
1.5±0.1
1.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
Denotes hFE
Abbreviated symbol:
CF
u M m as as m ‘2 w BASE TO EMWTER vomcz vs=lv) Hg.1 qunded emmev prupagallon chavaclenstms ammo}? SAYURAHCN vcmeg v“ w‘ a” 2m w mum common comm v (A) Hg] CuHectoFemMev saturanon voltage vs. cuHeclur Cunent { m) F E c mmsmov Fnzauzvov thHz‘ \. 0A 0 common ro EMWYER vomxos mm Hg.2 Grounded emmer ompm charamensncs { 1 J 05 02 n mu: m 25c 50m “7V 20m mm 5m 2m w comma comm my Hg.5 Cul‘ecmrremmer saturatmn vouage vs couecmv cunem ( I ) man S 20m mu 2 5 M) 2m so mu 2m 500 um EM‘TTER CURRENT MmA) Hga Gam bandwldm pvudud vs, emmer Currey“ 8 9 a 8 common to EM‘TTER vomsz mm H93 Gvuunded emmev omput chavacterwshcs (n) as M m out; 5m 2m mchToR sAmRmoN vomeg v» w w m ‘02 05‘ comma comm my Hg.5 CuHectorremmev saturanon vo‘tage vs. couemor Cunen (11) 20a EMHTER \NPuT cAPAchNcE mchToR owm ammo common TO sass vomcs mm EMH’TER m EASE vomsz VH(V] CuHecmr umpul capacnance vs cuHeclurrbase vonage Emma! mpm oapacmance vs. emuterrbase vouage Hg.9 www mhm com © 2008 ROHM Co, Ltd. AH righ's leselved, 2/2 2009.11 - Rev.B
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.11 - Rev.B
Data Sheet 2SD2150
zPackaging specifications and hFE
Package
Code T100
1000
Taping
Basic ordering
unit (pieces)
RS
h
FE
2SD2150
Type
hFE values are classified as follows :
Item
h
FE
R
180 to 390
S
270 to 560
zElectrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagatio
n
characteristics
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1
.4
V
CE
=2V
25°C
40°C
Ta=100°C
0
0.4
0.8
1.2
1.6
2
0 0.2 0.4 0.6 0.8 1.0
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
Fig.2 Grounded emitter output
characteristics ( )
8mA
6mA
4mA
2mA
20mA
18mA
16mA
14mA
12mA
10mA
Ta=25°C
I
B
=0A
0
1
2
3
4
5
012345
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
Fig.3 Grounded emitter output
characteristics ( )
Ta=25°C
I
B
=0A
35mA
30mA 25mA
20mA
15mA
10mA
5mA
40mA
45mA
50mA
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
V
CE
=2V
25°C
40°C
Ta=100°C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current
2
2m
5m
10m
20m
50m
0.1
0.2
0.5
1
2m 5m10m20m50m0.1 0.2 0.5 1 2 5 1
0
1m
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(
V)
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter
saturation voltage vs.
collector current ( )
I
C
/I
B
=10
Ta=100°C
25°C
40°C
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(
V)
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter
saturation voltage vs.
collector curren ( )
1m
2m
5m
0.01
0.011m 2m 5m 0.02 0.05
0.02
0.05
0.50.20.1
0.1
1
0.2
1
0
25
0.5
1l
C
/l
B
=20
25°C
40°C
Ta=100°C
2
2m
5m
10m
20m
50m
0.1
0.2
0.5
1
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(
V)
COLLECTOR CURRENT : I
C
(A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( )
2m 5m10m20m50m 0.2 0.5 1 2 5 1
0
1m 0.1
I
C
/I
B
=50
Ta=100°C
25°C
40°C
52110 20 50100 20050010
00
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
Fig.8 Gain bandwidth product vs
.
emitter current
1000
500
200
100
50
20
10
5
2
1
Ta=25°C
V
CE
=2V
10
20
50
100
200
500
0.1 0.2 0.5 1 2 5 10 20 5
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF
EMITTER INPUT CAPACITANCE : C
ib
(pF
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Collector output capacitance v
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
C
ob
C
ob
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
ROHI'I'I SEMICONDUCTOR
R0039
A
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