TIP31(A,B,C), TIP32(A,B,C) Datasheet by ON Semiconductor

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0N Sem ccccccccccc
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 16 1Publication Order Number:
TIP31A/D
TIP31G, TIP31AG, TIP31BG,
TIP31CG (NPN),
TIP32G,TIP32AG, TIP32BG,
TIP32CG(PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
High Current Gain − Bandwidth Product
Compact TO−220 Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO 40
60
80
100
Vdc
Collector−Base Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCB 40
60
80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC3.0 Adc
Collector Current − Peak ICM 5.0 Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD40
0.32 W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD2.0
0.016 W
W/°C
Unclamped Inductive Load Energy
(Note 1) E 32 mJ
Operating and Storage Junction Tem-
perature Range TJ, Tstg 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
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4
TIP3xx = Device Code
xx = 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
A = Assembly Location
Y = Year
WW = Work Week
G Pb−Free Package
TIP3xxG
AYWW
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
NPNPNP
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO(sus)
40
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP31G, TIP32G, TIP31AG, TIP32AG
(VCE = 60 Vdc, IB = 0)
TIP31BG, TIP31CG, TIP32BG, TIP32CG
ICEO
0.3
0.3
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP31G, TIP32G
(VCE = 60 Vdc, VEB = 0)
TIP31AG, TIP32AG
(VCE = 80 Vdc, VEB = 0)
TIP31BG, TIP32BG
(VCE = 100 Vdc, VEB = 0)
TIP31CG, TIP32CG
ICES
200
200
200
200
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE 25
10
50
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) 1.2 Vdc
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT3.0 MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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3
Figure 1. Power Derating
T, TEMPERATURE (°C)
0 100
0
1.0
160
2.0
3.0
60 80
40 140
4.0
TURN−ON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURN−OFF PULSE
t3
t1 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE 2.0%
APPROX −9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
4.0 V
Figure 2. Switching Time Equivalent Circuit
0.03
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.02 0.1 3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
0.5
0.3
0.1
0.05
0.05 0.3 0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
tr @ VCC = 30 V
20 120
TC
TA
0
10
20
30
40
TC
TA
PD, POWER DISSIPATION (WATTS)
t, TIME (ms)
50m \ SECONDARV BREAKDOWN \ ___ :25)C _ _ — BONDING WIRE LlM‘T TIPaIA. TIP32A
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
0.2
0.02
0.01
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10 205.0 50 100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
5.0ms
CURVES APPLY
BELOW RATED VCEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05 0.1 0.2 0.70.03 0.3 0.50.07
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
3.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
CAPACITANCE (pF)
200
100
70
50
30
10 20 4030
tf @ VCC = 30 V
tf @ VCC = 10 V
ts
IB1 = IB2
IC/IB = 10
ts = ts - 1/8 tf
TJ = 25°C
TJ = +25°C
Ceb
Ccb
Vcasaq @ lc ‘c: lcgs \C:2x\555 (NF-“CALI VALUES
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.4
101
100
10-2
102
10-1
10-3
107
105
104
102
106
103
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.05 0.07 0.3 3.00.03
100
70
50
30
10
7.0
0.1
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VCE = 2.0 V
5.0 0.7 1.00.5
1.6
2.0
2.0 5.0 20 10001.0
0.8
0.4
10
0100 200 50050
25°C
TJ = 150°C
-55°C1.2
1.4
0.003
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
00.005 0.01 0.02 0.03 0.05 0.1
+2.5
IC = 0.3 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0 A 3.0 A
0.2 0.3 0.5 1.0 2.0 3.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
*APPLIES FOR IC/IB hFE/2
TJ = -65°C TO +150°C
*qVC FOR VCE(sat)
qVB FOR VBE
Figure 11. Temperature Coefficients
, COLLECTOR CURRENT (A)μIC
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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ORDERING INFORMATION
Device Package Shipping
TIP31G TO−220
(Pb−Free) 50 Units / Rail
TIP31AG TO−220
(Pb−Free) 50 Units / Rail
TIP31BG TO−220
(Pb−Free) 50 Units / Rail
TIP31CG TO−220
(Pb−Free) 50 Units / Rail
TIP32G TO−220
(Pb−Free) 50 Units / Rail
TIP32AG TO−220
(Pb−Free) 50 Units / Rail
TIP32BG TO−220
(Pb−Free) 50 Units / Rail
TIP32CG TO−220
(Pb−Free) 50 Units / Rail
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
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PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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TIP31A/D
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