SMF, SZSMF_5.0AT1G Series Datasheet by Littelfuse Inc.

View All Related Products | Download PDF Datasheet
w ON Semiconductor"9 Q
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 7
1Publication Order Number:
SMF5.0AT1/D
SMF5.0AT1G Series,
SZSMF5.0AT1G Series
200 W Transient
Voltage Suppressor
SOD-123 Flat Lead Package
The SMF5.0AT1G Series is designed to protect voltage sensitive
components from high voltage, high energy transients. Excellent
clamping capability, high surge capability, low zener impedance and
fast response time. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines, power supplies
and many other industrial/consumer applications.
Features
Standoff Voltage: 5 58 Volts
Peak Power 200 Watts @ 1 ms (SMF5.0A SMF58A)
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
ESD Rating of Level 4 (8 kV Contact Discharge) per IEC6100042
EFT (Electrical Fast Transients) Rating of 40 A per IEC6100044
Low Profile Maximum Height of 1.0 mm
Small Footprint Footprint Area of 8.45 mm2
Supplied in 8 mm Tape and Reel 3,000 Units per Reel
Cathode Indicated by Polarity Band
Lead Orientation in Tape: Cathode Lead to Sprocket Holes
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 58 VOLTS
200 WATT PEAK POWER
Device Package Shipping
ORDERING INFORMATION
12
1: CATHODE
2: ANODE
http://onsemi.com
SOD123FL
CASE 498
MARKING DIAGRAM
1
CATHODE
2
ANODE
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
SMFxxxAT1G SOD123FL
(PbFree)
3,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
xx = Device Code (Refer to page 3)
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
xx M G
G
SZSMFxxxAT1G SOD123FL
(PbFree)
3,000 /
Tape & Reel
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
SMF5.0AT1G Series, SZSMF5.0AT1G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Maximum Ppk Dissipation (PW10/1000 ms) (Note 1) SMF5.0A SMF58A Ppk 200 W
Maximum Ppk Dissipation @ TA = 25°C, (PW8/20 ms) (Note 2) Ppk 1000 W
DC Power Dissipation
@ TA = 25°C (Note 3)
Derate above 25°C
Thermal Resistance, JunctiontoAmbient (Note 3)
°PD°
RqJA
385
4.0
325
°mW
mW/°C
°C/W
Thermal Resistance, JunctiontoLead (Note 3) RqJcathode 26 °C/W
Operating and Storage Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse at TA = 25°C, per waveform of Figure 2.
2. Nonrepetitive current pulse at TA = 25°C, per waveform of Figure 3.
3. Mounted with recommended minimum pad size, DC board FR4.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 12 A)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
SMF5.0AT1G Series, SZSMF5.0AT1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
Device* Marking
VRWM (V) VBR @ IT (V) (Note 6) ITIR @ VRWM VC(Max) IPP(Max) (A)
(Note 5) Min Nom Max (mA) (mA) (V) (Note 7)
SMF5.0AG KE 5 6.4 6.7 7 10 400 9.2 21.7
SMF6.0AG KG 6 6.67 7.02 7.37 10 400 10.3 19.4
SMF6.5AG KK 6.5 7.22 7.6 7.98 10 250 11.2 17.9
SMF7.0AG KM 7 7.78 8.2 8.6 10 100 12 16.7
SMF7.5AG KP 7.5 8.33 8.77 9.21 1 50 12.9 15.5
SMF8.0AG KR 8 8.89 9.36 9.83 1 25 13.6 14.7
SMF9.0AG KV 9 10 10.55 11.1 1 5 15.4 13.0
SMF10AG KX 10 11.1 11.7 12.3 1 2.5 17 11.8
SMF11AG KZ 11 12.2 12.85 13.5 1 2.5 18.2 11.0
SMF12AG LE 12 13.3 14 14.7 1 2.5 19.9 10.1
SMF13AG LG 13 14.4 15.15 15.9 1 1 21.5 9.3
SMF14AG LK 14 15.6 16.4 17.2 1 1 23.2 8.6
SMF15AG LM 15 16.7 17.6 18.5 1 1 24.4 8.2
SMF18AG LT 18 20 21 22.1 1 1 29.2 6.8
SMF20AG LV 20 22.2 23.35 24.5 1 1 32.4 6.2
SMF22AG LX 22 24.4 25.6 26.9 1 1 35.5 5.6
SMF24AG LZ 24 26.7 28.1 29.5 1 1 38.9 5.1
SMF26AG ME 26 28.9 30.4 31.9 1 1 42.1 4.8
SMF28AG MG 28 31.1 32.8 34.4 1 1 45.4 4.4
SMF30AG MK 30 33.3 35.1 36.8 1 1 48.4 4.1
SMF33AG MM 33 36.7 38.7 40.6 1 1 53.3 3.8
SMF36AG MP 36 40 42.1 44.2 1 1 58.1 3.4
SMF48AG MX 48 53.3 56.1 58.9 1 1 77.4 2.6
SMF51AG MZ 51 56.7 59.7 62.7 1 1 82.4 2.4
SMF58AG NG 58 64.4 67.8 71.2 1 1 93.6 2.1
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 3.
*Include SZ-prefix devices where applicable.
10,000 1000 VALU E (95’ 100 10 1.0 m 100 IR PULSE WIDTH ms) hllp://onsemi.com 4
SMF5.0AT1G Series, SZSMF5.0AT1G Series
http://onsemi.com
4
tP
, PULSE WIDTH (ms)
100
1000
10,000
1.0 10 100
10
01234
0
50
100
t, TIME (ms)
VALUE (%)
HALF VALUE IRSM
2
PEAK VALUE IRSM
tr
TYPICAL PROTECTION CIRCUIT
Vin VL
Zin
LOAD
tP
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF IRSM.
Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 ms Pulse Waveform
1000 10,000
Figure 3. 8 X 20 ms Pulse Waveform
PP
, PEAK POWER (WATTS)
tr 10 ms
100
80
60
40
20
00 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
120
140
160
Figure 4. Pulse Derating Curve
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25°C
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
>>EV 20F>0m EDS-$9127 a
SMF5.0AT1G Series, SZSMF5.0AT1G Series
http://onsemi.com
5
1.2
1.0
0.8
0.6
0.4
0.2
0
55 25 85 150
T, TEMPERATURE (°C)
V , TYPICAL FORWARD VOLTAGE (VOLTS)
F
25 50 75 100 125 175
T, TEMPERATURE (°C)
P , MAXIMUM POWER DISSIPATION (m
W
D
150
1000
100
1
1 10 1000
WORKING PEAK REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
MEASURED @ 50% VRWM
MEASURED @ ZERO BIAS
Figure 5. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 ms
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 ms
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
Figure 6. Steady State Power Derating
Figure 7. Forward Voltage Figure 8. Capacitance versus Working Peak
Reverse Voltage
10
100
350
300
250
200
150
400
100
50
0
0
SMF5.0AT1G Series, SZSMF5.0AT1G Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SOD123FL
CASE 498
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
D
E
b
A
A1
L
c
POLARITY INDICATOR
OPTIONAL AS NEEDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 0.95 0.98 0.035
INCHES
A1 0.00 0.05 0.10 0.000
b0.70 0.90 1.10 0.028
c0.10 0.15 0.20 0.004
D1.50 1.65 1.80 0.059
E2.50 2.70 2.90 0.098
L0.55 0.75 0.95 0.022
0.037 0.039
0.002 0.004
0.035 0.043
0.006 0.008
0.065 0.071
0.106 0.114
0.030 0.037
NOM MAX
3.40 3.60 3.80 0.134 0.142 0.150
HE
0°8°0°8°
q
q
q
TOP VIEW
BOTTOM VIEW
SIDE VIEW
HE
2X
2X
END VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
1.25
2X
4.20
1.22
2X
12
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
SMF5.0AT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

Products related to this Datasheet

TVS DIODE 5V 9.2V SOD123FL
TVS DIODE 36V 58.1V SOD123FL
TVS DIODE 10V 17V SOD123FL
TVS DIODE 24V 38.9V SOD123FL
TVS DIODE 20V 32.4V SOD123FL
TVS DIODE 10V 17V SOD123FL
TVS DIODE 20V 32.4V SOD123FL
TVS DIODE 5V 9.2V SOD123FL
TVS DIODE 14V 23.2V SOD123FL
TVS DIODE 6.5V 11.2V SOD123FL
TVS DIODE 33V 53.3V SOD123FL
TVS DIODE 8V 13.6V SOD123FL
TVS DIODE 13V 21.5V SOD123FL
TVS DIODE 30V 48.4V SOD123FL
TVS DIODE 33V 53.3V SOD123FL
TVS DIODE 5V 9.2V SOD123FL
TVS DIODE 10V 17V SOD123FL
TVS DIODE 11V 18.2V SOD123FL
TVS DIODE 12V 19.9V SOD123FL
TVS DIODE 14V 23.2V SOD123FL
TVS DIODE 15V 24.4V SOD123FL
TVS DIODE 18V 29.2V SOD123FL
TVS DIODE 20V 32.4V SOD123FL
TVS DIODE 22V 35.5V SOD123FL
TVS DIODE 24V 38.9V SOD123FL
TVS DIODE 26V 42.1V SOD123FL
TVS DIODE 28V 45.4V SOD123FL
TVS DIODE 30V 48.4V SOD123FL
TVS DIODE 36V 58.1V SOD123FL
TVS DIODE 48V 77.4V SOD123FL