NTJS3151P Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
May, 2019 Rev. 4
1Publication Order Number:
NTJS3151/D
NTJS3151P, NVJS3151P
MOSFET – Power, Single,
P-Channel, Trench, ESD
Protected, SC-88
12 V, 3.3 A
Features
Leading Trench Technology for Low RDS(ON) Extending Battery Life
SC88 Small Outline (2x2 mm, SC706 Equivalent)
Gate Diodes for ESD Protection
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Units
DraintoSource Voltage VDSS 12 V
GatetoSource Voltage VGS ±12 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °CID2.7 A
TA = 85 °C2.0
t 5 s TA = 25 °C3.3
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C PD0.625 W
Pulsed Drain Current tp = 10 msIDM 8.0 A
Operating Junction and Storage Temperature TJ,
TSTG
55 to
150
°C
Source Current (Body Diode) IS0.8 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Max Units
JunctiontoAmbient – Steady State RqJA 200 °C/W
JunctiontoAmbient t 5 s RqJA 141
JunctiontoLead – Steady State RqJL 102
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SC88/SOT363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
XXX MG
G
1
6
1
XXX = Device Code
M = Date Code
G= PbFree Package
DDS
DDG
(Note: Microdot may be in either location)
V(BR)DSS RDS(on) Typ ID Max
12 V
45 mW @ 4.5 V
67 mW @ 2.5 V
133 mW @ 1.8 V
3.3 A
Top View
SC88 (SOT363)
D
D
S
D
D
6
5
4
1
2
3
G
S
D
G
3 kW
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NTJS3151P, NVJS3151P
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2
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA12 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ10 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 9.6 V,
VDS = 0 V
TJ = 25°C1.0 mA
TJ = 125°C2.5
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V ±1.5 mA
VDS = 0 V, VGS = ±12 V±10 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 100 mA0.40 1.2 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ3.4 mV/°C
DraintoSource On Resistance RDS(on) VGS = 4.5 V, ID = 3.3 A 45 60 mW
VGS = 2.5 V, ID = 2.9 A 67 90
VGS = 1.8 V, ID = 1.0 A 133 160
Forward Transconductance gFS VGS = 10 V, ID = 3.3 A 15 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
850 pF
Output Capacitance COSS 170
Reverse Transfer Capacitance CRSS 110
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 5.0 V,
ID = 3.3 A
8.6 nC
GatetoSource Charge QGS 1.3
GatetoDrain Charge QGD 2.2
Gate Resistance RG3000 W
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time td(ON)
VGS = 4.5 V, VDD = 6.0 V,
ID = 1.0 A, RG = 6.0 W
0.86 ms
Rise Time tr1.5
TurnOff Delay Time td(OFF) 3.5
Fall Time tf3.9
DRAINSOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage VSD VGS = 0 V,
IS = 3.3 A
TJ = 25°C0.85 1.2 V
TJ = 125°C0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
'rJ :150>c T : 12510
NTJS3151P, NVJS3151P
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3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
2 V
125°C
0
8
6
32
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
2
0
1
Figure 1. OnRegion Characteristics
0
8
1.5120.5
0
4.5
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (VOLTS)
8
1000
100
Figure 3. OnResistance vs. Drain Current and
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
IDSS, LEAKAGE CURRENT (nA)
ID, DRAIN CURRENT (AMPS)
0.5 3.5
0
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (AMPS)
50 025 25
1.0
0.8
0.6
0.4
0
50 125100
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
100000
2
TJ = 55°C
VGS = 0 V
0.1
75 150
TJ = 25°C
ID = 3.3 A
VGS = 4.5 V
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
25°C
RDS(on), DRAINTOSOURCE RESISTANCE (W)
2.0
VGS = 4.5 V
1.2 V
012
1.4 V
1.6 V
2.4 V
0.075
0.05
45
10000
1.5 2.5 7.5
0.025
VGS = 4.5 V
Figure 6. DraintoSource Leakage Current
vs. Voltage
0.2
ID, DRAIN CURRENT (AMPS)
0.5
0
RDS(on), DRAINTOSOURCE RESISTANCE (W)
VGS = 4.5 V
0.1
0.4
VGS = 2.5 V
0.3
4
10
TJ = 125°C
TJ = 55°C
0.2
TJ = 25°C
VGS = 1.8 V
1.8
1.6
1.4
1.2
TJ = 125°C
TJ = 150°C
2.5 3
2
4
6
VDS 12 V
VGS = 3.4 V
43.5
6.54.5 5.5 0.5 3.51.5 2.5 7.56.54.5 5.5
46
NTJS3151P, NVJS3151P
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
408
1600
600
400
200
0
12
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0
4
1
0
Qg, TOTAL GATE CHARGE (nC)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
TJ = 25°C
Coss
Ciss
Crss
ID = 3.3 A
TJ = 25°C
1000
64
2
3
Q2Q1
101
1000
100
100
RG, GATE RESISTANCE (OHMS)
t, TIME (ns)
VDD = 6.0 V
ID = 1.0 A
VGS = 4.5 V
2
800
4.5
td(off)
td(on)
tf
tr
10 2
0.6
0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
0.70.10
3
Figure 7. Capacitance Variation Figure 8. GatetoSource Voltage vs. Total
Gate Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
6
1400
810
QT
10000
0.2 0.50.3
1
2
4
0.4
1200 3.5
2.5
1.5
0.5
0.8 0.9
ORDERING INFORMATION
Device Marking Package Shipping
NTJS3151PT1G TJ
SC88
(PbFree) 3000 / Tape & Reel
NTJS3151PT2G TJ
NVJS3151PT1G* VTJ
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.
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NTJS3151P, NVJS3151P
www.onsemi.com
5
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
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Phone: 81358171050
NTJS3151P/D
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