w 0N Semiconductor® ® 3 1 1
© Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 4
1Publication Order Number:
MMBT4403WT1/D
MMBT4403WT1G
Switching Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 40 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
TA = 25°C
PD150 mW
Thermal Resistance,
JunctiontoAmbient
RqJA 833 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SC70
CASE 419
STYLE 3
2
3
1
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping
ORDERING INFORMATION
MMBT4403WT1G SC70
(PbFree)
3000 /
Tape & Reel
http://onsemi.com
2T MG
G
2T = Specific Device Code
M = Date Code
G= PbFree Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 Vdc
EmitterBase Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − −0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − −0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1)
hFE 30
60
100
100
20
300
CollectorEmitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.4
0.75
Vdc
BaseEmitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
0.95
1.3
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT200 MHz
CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb 8.5 pF
EmitterBase Capacitance (VBE = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.5 15 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 104
SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 60 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td15
ns
Rise Time tr20
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts225
ns
Fall Time tf30
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. TurnOn Time Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
-16 V 10 to 100 ms,
DUTY CYCLE = 2%
0
1.0 kW
-30 V
200 W
CS* < 10 pF 1.0 kW
-30 V
200 W
CS* < 10 pF
+4.0 V
< 2 ns
1.0 to 100 ms,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
-16 V
MMBT4403WT1G
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3
Figure 3. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
100
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 10
1
100
C, CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Cibo
QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
1
0.3
0.2
30
ts, STORAGE TIME (ns)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 50030
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 50030
VCC = 30 V
IC/IB = 10
10 20 50 70 100 200 300 50030
100
20
70
50
200
30
tr, RISE TIME (ns)
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts = ts - 1/8 tf
Cobo
MMBT4403WT1G
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4
6
8
10
0
4
2
0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALLSIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
IC = 100 mA, RS = 1.6 kW
RS = OPTIMUM SOURCE RESISTANCE
50 100 200 500 1k 2k 5k 10k 20k 50k
6
8
10
0
4
2
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a highgain and a lowgain unit were selected from the MMBT4403WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
Figure 10. Current Gain
IC, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3
300
700
30
200
100
1000
hfe, CURRENT GAIN
hie, INPUT IMPEDANCE (OHMS)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100k
100
50
5.0 7.0
20k
10k
5k
2k
1k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3
0.1
20
Figure 13. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0
500
70
50k
500
200
10
100
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
‘rA : 150°C
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5
STATIC CHARACTERISTICS
Figure 14. DC Current Gain vs. Collector
Current
Figure 15. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
10001001010.1
10
100
1000
10001001010.1
10
100
1000
Figure 16. Saturation Region Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
1001010.10.010.001
0
0.2
0.6
0.8
1.0
1.4
1.8
2.0
10001001010.1
0.01
0.1
1
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. BaseEmitter TurnOn Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
10001001010.1
0.2
0.3
0.4
0.5
0.7
0.8
0.9
1.0
10001001010.1
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(ON), BASEEMITTER ON
VOLTAGE (V)
VCE = 1 V
TA = 150°C
TA = 25°C
TA = 55°C
VCE = 10 V
TA = 150°C
TA = 25°C
TA = 55°C
0.4
1.2
1.6
TA = 25°C
IC = 1 mA
10 mA 100 mA 600 mA
TA = 150°C
TA = 25°C
TA = 55°C
0.6
TA = 150°C
TA = 25°C
TA = 55°C
IC/IB = 10
0.5
0.9
TA = 150°C
TA = 25°C
TA = 55°C
VCE = 1 V
IC/IB = 10
0,001
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6
STATIC CHARACTERISTICS
Figure 20. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
100
1000
10
Figure 21. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
110
1
100
0.5
0
0.5
1.0
1.5
2.0
Single Pulse Test at TA = 25°C
qVC for VCE(sat)
qVS for VBE
COEFFICIENT (mV/ C)°
2.5 1.0 2.0 5.0 10 20 50 100 500200
0.1 0.2 0.5
IC, COLLECTOR CURRENT (mA)
1 s
0.1
0.01
0.001 0.0001
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7
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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