l TEXAS
INSTRUMENTS
LMV232
SNWS017C –DECEMBER 2004–REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1)(2)
Supply Voltage VDD - GND 3.6V Max
ESD Tolerance (3) Human Body Model 2000V
Machine Model 200V
Storage Temperature Range -65°C to 150°C
Junction Temperature (4) 150°C Max
Mounting Temperature Infrared or Convection (20 sec) 235°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human body model: 1.5 kΩin series with 100 pF. Machine model, 0Ωin series with 100 pF.
(4) The maximum power dissipation is a function of TJ(MAX) ,θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD= (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.
OPERATING RATINGS (1)
Supply Voltage 2.5V to 3.3V
Operating Temperature Range -40°C to +85°C
RF Frequency Range 50 MHz to 2 GHz
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
2.7 DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ= 25°C. Boldface limits apply at temperature extremes. (1)
Symbol Parameter Condition Min Typ Max Units
IDD Supply Current Active Mode: SD = LOW, No RF 9.8 11 mA
Input Power Present 13
Shutdown: SD = 1.8V, No RF Input 0.09 5 μA
Power Present 30
VLOW BS and SD Logic Low Level (2) 0.8 V
VHIGH BS and SD Logic High Level (2) 1.8 V
IBS, ISD Current into BS and SD pins 5µA
VOUT Output Voltage Swing From Positive Rail, Sourcing, 20 80 mV
FB = 0V, IOUT = 1 mA 90
From Negative Rail, Sinking, 20 60 mV
FB = 2.7V, IOUT =−1 mA 70
IOUT Output Short Circuit Sourcing, FB = 0V, VOUT = 2.6V 3.7 5.1 mA
2.7
Sinking, FB = 2.7V, VOUT = 0.1V 3.7 5.5
2.7
235 275
VOUT Output Voltage (Pedestal) No RF Input Power 254 mV
230 280
Pedestal Variation Over
VPED 5.4 mV
Temperature (3)
Offset Current Variation Over
IOS 1.17 µA
Temperature (3)
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ= TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ> TA.
(2) All limits are specified by design or statistical analysis.
(3) Typical numbers represent the 3-sigma value of 10k units. 3-sigma value of variation between −40°C / 25°C and variation between 25°C
/ 85°C.
2Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LMV232