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1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0V1BA;
PESD5V0V1BB; PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 2 — 9 November 2012 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEITA
PESD5V0V1BA SOD323 SC-76 very small
PESD5V0V1BB SOD523 SC-79 ultra small and flat lead
PESD5V0V1BL SOD882 - leadless ultra small
Bidirectional ESD protection of one line ESD protection up to 30 kV
Very low diode capacitance: Cd=11pF IEC 61000-4-2; level 4 (ESD)
Max. peak pulse power: PPP =45W IEC 61000-4-5 (surge); IPP =4.8A
Low clamping voltage: VCL = 12.5 V AEC-Q101 qualified
Ultra low leakage current: IRM <1nA
Computers and peripherals Communication systems
Audio and video equipment Portable electronics
Cellular handsets and accessories 10/100 Mbit/s Ethernet
Subscriber Identity Module (SIM) card
protection
FireWire
Table 2. Quick reference data
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
Cddiode capacitance f = 1 MHz; VR=0V - 11 13 pF
[D 23 SZ 23 SZ
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 2 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
2. Pinning information
[1] The marking bar indicates pin 1.
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PESD5V0V1BA; PESD5V0V1BB
1 cathode (diode 1) [1]
2 cathode (diode 2)
PESD5V0V1BL
1 cathode (diode 1) [1]
2 cathode (diode 2)
001aab540
12
sym045
21
21
Transparent
top view
sym045
21
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD5V0V1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
Table 5. Marking codes
Type number Marking code
PESD5V0V1BA 1K
PESD5V0V1BB Z9
PESD5V0V1BL X1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp=8/20s[1] -45W
IPP peak pulse current tp=8/20s[1] -4.8A
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 3 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[1] Device stressed with ten non-repetitive ESD pulses.
Per device
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 7. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -30kV
machine model - 2 kV
MIL-STD-883 (human
body model) -16kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 4 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
Table 9. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM =5V - < 1 10 nA
VBR breakdown voltage IR=5mA 5.86.87.8V
Cddiode capacitance f = 1 MHz;
VR=0V -1113pF
VCL clamping voltage IPP =4.8A [1] --12.5V
rdyn dynamic resistance IR=10A [2] -0.2-
rdif differential resistance IR=5mA - - 35
Tamb =25C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
7ch vaa VRwM ‘ ‘
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 5 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
f=1MHz; T
amb =25C
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 7. V-I characteristics for a bidirectional ESD protection diode
006aaa676
V
CL
V
BR
V
RWM
V
CL
V
BR
V
RWM
I
RM
I
RM
I
R
I
R
I
PP
I
PP
+
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 6 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Fig 8. ESD clamping test setup and waveforms
006aab609
50 Ω
RZ
CZ
DUT
(DEVICE
UNDER
TEST)
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
acc. to IEC 61000-4-2
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
unclamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
clamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 10 V/div
horizontal scale = 100 ns/div
NVI
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 7 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
7. Application information
The PESD5V0V1Bx series is designed for the protection of one bidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are both, positive or negative with respect to ground.
The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 s
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 9. Application diagram
006aab610
PESD5V0V1Bx
GND
line to be protected
--
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 8 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 10. Package outline
PESD5V0V1BA (SOD323/SC-76) Fig 11. Package outline
PESD5V0V1BB (SOD523/SC-79)
Fig 12. Package outline PESD5V0V1BL (SOD882)
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 8000 10000
PESD5V0V1BA SOD323 4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BB SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BL SOD882 2 mm pitch, 8 mm tape and reel - - -315
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 9 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
11. Soldering
Fig 13. Reflow soldering footprint PESD5V0V1BA (SOD323/SC-76)
Fig 14. Wave soldering footprint PESD5V0V1BA (SOD323/SC-76)
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
mwwaflwhWW‘ww‘M\\JW A ‘ W W W W M WW 1 W W» W W W WWW m WW W W1; W W W W “L W W W W W W W W W W W W W W WiiWiiW W W‘ W W W W m fl” W m 4 a ‘W HWMWMW‘w WrL‘H‘HHWW} H W W WW W, \WWW W W WWKL WW a W 1i ‘1, k "a “““ 1‘“‘ W‘ @C WW WW W WW WW
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 10 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Fig 15. Reflow soldering footprint PESD5V0V1BB (SOD523/SC-79)
Fig 16. Reflow soldering footprint PESD5V0V1BL (SOD882)
Footprint information for reflow soldering of plastic surface-mounted, 2 leads package SOD523
sod523_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.4
0.4
(2×)
0.5
(2×)
1.2
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
Table 9 “Characteristics" Figure 15 Section 13 “Legal information"
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 11 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0V1BA_BB_BL v.2 20121109 Product data sheet - PESD5V0V1BA_BB_BL v.1
Modifications: Table 9 Characteristics: added dynamic resistance rdyn
Figure 15: updated
Section 13 “Legal information: updated
PESD5V0V1BA_BB_BL v.1 20090728 Product data sheet - -
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 12 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
13. Legal information
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[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Characteristics sections of this document is not warranted. Constant or
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 13 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
No offer to sell or license — Nothing in this document may be interpreted or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 November 2012
Document identifier: PESD5V0V1BA_BB_BL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14