Hoja de datos de 2N7002NXAK de Nexperia USA Inc.

Table 1. Quick relerence data nexpefla
2N7002NXAK
60 V, single N-channel Trench MOSFET
1 July 2019 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protected
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 60 V
VGS gate-source voltage
Tj = 25 °C
-20 - 20 V
VGS = 10 V; Tsp = 25 °C - - 300 mAIDdrain current
VGS = 10 V; Tamb = 25 °C [1] - - 190 mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002NXAK Table 2. Pinning information Table 3. Ordering information Table 4. Marking codes
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
TO-236AB (SOT23)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
2N7002NXAK TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code[1]
2N7002NXAK %CM
[1] % = placeholder for manufacturing site code
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 2 / 14
2N7002NXAK P = Pm! der Pszs'C) X100% X100% I = D de’ ’D(25°c)
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage
Tj = 25 °C
-20 20 V
VGS = 10 V; Tsp = 25 °C - 300 mA
VGS = 10 V; Tamb = 25 °C [1] - 190 mA
IDdrain current
VGS = 10 V; Tamb = 100 °C [1] - 120 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 760 mA
[2] - 265 mWTamb = 25 °C
[1] - 325 mW
Ptot total power dissipation
Tsp = 25 °C - 1330 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb = 25 °C [1] - 190 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Tj (°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Tj (°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 3 / 14
2N7002NXAK 017355465 us Table 6. Thermal characteristics
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
017aaa466
VDS (V)
10-1 102
101
10-1
10-2
1
ID
(A)
10-3
Limit RDSon = VDS/ID
(1)
(2)
(3)
(4)
(5)
(6)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 410 470 K/WRth(j-a) thermal resistance from
junction to ambient
in free air
[2] - 330 380 K/W
Rth(j-sp) thermal resistance from
junction to solder point
- - 95 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 4 / 14
2N7002NXAK 017553457 017553468
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
017aaa467
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05 0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa468
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05 0.02
0.01 0
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 5 / 14
2N7002NXAK Table 7. Characteristics
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C 1.1 1.6 2.1 V
VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -2 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -0.5 µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 100 nA
IGSS gate leakage current
VGS = -5 V; VDS = 0 V; Tj = 25 °C - - -100 nA
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C - 6.2 9.2 Ω
RDSon drain-source on-state
resistance
VGS = 5 V; ID = 100 mA; Tj = 25 °C - 3.7 5.2 Ω
gfs forward
transconductance
VDS = 10 V; ID = 200 mA; Tj = 25 °C - 500 - mS
Dynamic characteristics
QG(tot) total gate charge - 0.33 0.43 nC
QGS gate-source charge - 0.12 - nC
QGD gate-drain charge
VDS = 30 V; ID = 200 mA; VGS = 4.5 V;
Tj = 25 °C
- 0.09 - nC
Ciss input capacitance - 15 20 pF
Coss output capacitance - 3.4 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 2 - pF
td(on) turn-on delay time - 6 12 ns
trrise time - 7 - ns
td(off) turn-off delay time - 11 20 ns
tffall time
VDS = 40 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 5 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 0.47 0.8 1.2 V
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 6 / 14
2N7002NXAK 017535459 017355472 us 91753547: 017355472 RDSa (H) D as
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
VDS (V)
0 431 2
017aaa469
0.10
0.05
0.15
0.20
ID
(A)
0
10 V
2.3 V
VGS = 2.0 V
2.5 V
3.0 V
4.5 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa470
VGS (V)
0 321
10-4
10-5
10-3
ID
(A)
10-6
(1) (2) (3)
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
ID (A)
0 0.200.150.05 0.10
017aaa471
4
6
2
8
10
RDSon
(Ω)
0
3.0 V
4.5 V
10.0 V
2.0 V 2.5 V
2.3 V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)
0 1084 62
017aaa472
4
8
12
RDSon
0
(1)
(2)
ID = 0.2 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 7 / 14
2N7002NXAK I! I! H I I / / 017355474 : RDSo/v RDSoIAst) 017535475 017355475 us
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
VGS (V)
0 542 31
017aaa473
0.10
0.05
0.15
0.20
ID
(A)
0
(1)
(2)
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
017aaa474
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Tj (°C)
-60 1801200 60
017aaa475
1.0
1.5
0.5
2.0
2.5
VGS(th)
(V)
0
(1)
(2)
(3)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
VDS (V)
10-1 102
101
017aaa476
10
1
102
C
(pF)
10-1
(1)
(2)
(3)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 8 / 14
2N7002NXAK _______ ———4 I I V \ , \ I \ I \ s. P QG 017535478 II II I! L, / so
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
QG (nC)
0 0.80.60.2 0.4
017aaa477
4
6
2
8
10
VGS
(V)
0
ID = 0.2 A; VDS = 30 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
017aaa478
VSD (V)
0 1.20.80.4
0.10
0.05
0.15
0.20
IS
(A)
0
(1) (2)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 17. Duty cycle definition
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 9 / 14
2N7002NXAK Plastic surlace-mounted package; 3 leads SOT23 E}@ 44-96—19
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
12. Package outline
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT23 TO-236AB
sot023_po
14-06-19
14-09-22
Plastic surface-mounted package; 3 leads SOT23
bp
D
A
A1
Lp
Q
HE
E
0 1 2 mm
scale
c
1 2
3
B
w B
e
e1
v A
AX
Unit
mm
max
nom
min
1.1 0.1 0.15 3.0 1.4
0.2
A
Dimensions (mm are the original dimensions)
A1bp
0.48
c D E e e1
0.95
HELpQ v w
0.11.9
2.1 0.150.9 0.09 2.8 1.20.38
2.5 0.45
0.45
0.55
detail X
Fig. 18. Package outline TO-236AB (SOT23)
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 10 / 14
K 2N7002NXA WIN, - “““ A, 3H1 m J? W g i m h ,_ :Wmfl xxwrwx , ‘ D f
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 11 / 14
2N7002NXAK Table 8. Revision history
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
2N7002NXAK v.1 20190701 Product data sheet - -
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 12 / 14
2N7002NXAK same In a deswgn on new sheet’ .5 exp‘amed in status er den/ms) described 2 «ms documenl was publish es. The latest produd slam hugs waw nexg mm sale 7 Max us or eon ns Mcomme m me genera‘ ierm and can m llwww nex er
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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Product data sheet 1 July 2019 13 / 14
2N7002NXAK
Nexperia 2N7002NXAK
60 V, single N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information.......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 1 July 2019
2N7002NXAK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 1 July 2019 14 / 14