Hoja de datos de ZMY3V9 thru ZMY100 de Vishay General Semiconductor - Diodes Division

VISHAY. ® RDHS comma NALOGEN FREE K: so Mode‘s ww vlshay com/1106799912 on:DwodesAmeHcas@\/wshay.cam DwodesAswamwshaymm DwodesEuvopefllvlshayxom www.v\shay,com/doc?91000
ZMY3V9 to ZMY100
www.vishay.com Vishay Semiconductors
Rev. 2.0, 12-Mar-2019 1Document Number: 85788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Silicon planar power Zener diodes
For use in stablilizing and clipping circuits with
high power rating
The Zener voltages are graded according to the
international E 24 standard. Smaller voltage
tolerances are available upon request
These diodes are also available in the DO-41
case with the type designation ZPY3V9 to ZPY100
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 3.9 to 100 V
Test current IZT 5 to 100 mA
VZ specification Pulse current
Circuit configuration Single
3
3
D
D
3
D
3D Models
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
ZMY3V9 to ZMY100 ZMY3V9 to ZMY100-series-GS18 5 000 (12 mm tape on 13" reel) 10 000/box
ZMY3V9 to ZMY100 ZMY3V9 to ZMY100-series-GS08 1 500 (12 mm tape on 7" reel) 12 000/box
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL SOLDERING CONDITIONS
MELF (DO-213AB) glass 135 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation Valid provided that electrodes are kept at
ambient temperature Ptot 1000 mW
Zener current See table “Characteristics”
Junction to ambient air Valid provided that electrodes are kept at
ambient temperature RthJA 170 K/W
Junction to ambient case RthJC 60 K/W
Junction temperature, maximum Tj175 °C
Storage temperature range Tstg -55 to +175 °C
VISHAY. on: DwodesAmev\cas@wshay.cam DwodesAswaij/wshaymm DwodesEuvopefilvlshayLom www.v\shay.com/doc?91000
ZMY3V9 to ZMY100
www.vishay.com Vishay Semiconductors
Rev. 2.0, 12-Mar-2019 2Document Number: 85788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Valid provided that electrodes are kept at ambient temperature
(2) Tested with pulses tp = 5 ms
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (2)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
f = 1 kHz
ADMISSIBLE
ZENER
CURRENT (1)
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1 IZT1 VR at IRZZ at IZT1 IZ VZ at IZT1
VmA VμA mA 10-4/°C
MIN. NOM. MAX. MAX. TYP. MIN. MAX.
ZMY3V9 3.7 3.9 4.1 100 -0.5 74 203 - 7 2
ZMY4V3 4 4.3 4.6 100 -0.5 74 182 - 7 3
ZMY4V7 4.4 4.7 5100 -0.5 74 165 - 7 4
ZMY5V1 4.8 5.1 5.4 100 0.7 0.5 52 150 - 6 5
ZMY5V6 5.2 5.6 6100 1.5 0.5 21 135 - 3 5
ZMY6V2 5.8 6.2 6.6 100 20.5 21 128 - 1 6
ZMY6V8 6.4 6.8 7.2 100 30.5 21 110 0 7
ZMY7V5 7 7.5 7.9 100 50.5 21 100 0 7
ZMY8V2 7.7 8.2 8.7 100 60.5 21 89 3 8
ZMY9V1 8.5 9.1 9.6 50 70.5 42 82 3 8
ZMY10 9.4 10 10.6 50 7.5 0.5 42 74 5 9
ZMY11 10.4 11 11.6 50 8.5 0.5 73 66 5 10
ZMY12 11.4 12 12.7 50 90.5 73 60 5 10
ZMY13 12.4 13 14.1 50 10 0.5 94 55 5 10
ZMY15 13.8 15 15.8 50 11 0.5 94 49 5 10
ZMY16 15.3 16 17.1 25 12 0.5 10 5 44 7 11
ZMY18 16.8 18 19.1 25 14 0.5 11 5 40 7 11
ZMY20 18.8 20 21.2 25 15 0.5 12 6 36 7 11
ZMY22 20.8 22 23.3 25 17 0.5 13 7 34 7 11
ZMY24 22.8 24 25.6 25 18 0.5 14 8 29 7 12
ZMY27 25.1 27 28.9 25 20 0.5 15 9 27 7 12
ZMY30 28 30 32 25 22.5 0.5 20 10 25 7 12
ZMY33 31 33 35 25 25 0.5 20 11 22 7 12
ZMY36 34 36 38 10 27 0.5 60 25 20 7 12
ZMY39 37 39 41 10 29 0.5 60 30 18 8 12
ZMY43 40 43 46 10 32 0.5 80 35 17 8 13
ZMY47 44 47 50 10 35 0.5 80 40 15 8 13
ZMY51 48 51 54 10 38 0.5 100 45 14 8 13
ZMY56 52 56 60 10 42 0.5 100 50 13 8 13
ZMY62 58 62 66 10 47 0.5 130 60 11 8 13
ZMY68 64 68 72 10 51 0.5 130 65 10 8 13
ZMY75 70 75 79 10 56 0.5 160 70 9 8 13
ZMY82 77 82 88 10 61 0.5 160 80 8 8 13
ZMY91 85 91 96 568 0.5 250 120 7.5 9 13
ZMY100 94 100 106 575 0.5 250 130 7 9 13
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ZMY3V9 to ZMY100
www.vishay.com Vishay Semiconductors
Rev. 2.0, 12-Mar-2019 3Document Number: 85788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Dynamic Resistance vs. Zener Current
Fig. 2 - Dynamic Resistance vs. Zener Current
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 4 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 - Pulse Thermal Resistance vs. Pulse Duration
Fig. 6 - Breakdown Characteristics
1
2
10 100
mA
10
3
10
2
1
Ω
r
zj
I
Z
18312
54
3254
3
2
5
4
3
2
5
4
3
2
5
4
3
10
77
ZMY5.1
ZMY4.3
ZMY18
ZMY12
ZMY7.5
ZMY6.2
ZMY10
ZMY...
1
210 100 mA
100
10
1
Ω
2
5
4
3
rzj
IZ
18313
54
3254
3
7
2
5
4
3
7
ZMY43
ZMY36
ZMY30
ZMY24
ZMY22
ZMY...
ZMY18
ZMY...
0.1
2
110
mA
10
3
10
2
10
Ω
2
5
4
3
r
zj
I
Z
18314
54
3254
3
7
2
5
4
3
7
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
0100
200 °C
0.8
0.4
0
W
P
tot
T
amb
19969
ZMY...
1.0
0.6
0.2
10
-5
10
-4
10
-3
10
-2
10
-1
110
s
10
3
10
2
10
1
°C/W
2
5
4
3
2
5
4
3
2
5
4
3
r
thA
t
P
18286
tP
v =
T
PI
___
T
tP
0.5
0.2
0.1
0.05
0.02
0.01
ZMY...
V = 0
012345678 9 1011 12131415 V
0
40
80
120
160
200
240
mA
I
Z
V
Z
18309
ZMY...
Tj = 25 °C
Test Current lZ
100 mA
50 mA
ZMY4.7
ZMY3.9
ZMY5.6
ZMY6.8
ZMY8.2
ZMY10
ZMY12
VISHAY. * f“ * ””””” *F‘} \ ‘ 1 w w w ,, ,‘iw, ,7 ,7 ,iwi‘W, \ ‘ ‘ w w ‘ } w l J _ 7777777777 #L J Documem nu SB’V’INSSDQ’UDI (4) ‘ ’ Rev. 3 - Dale U7 June 2005 on:D\odesAmeHcas@\/Ishay.com DwodesAsIa©vwshay£am DwodesEuvogefilvlshayLom www.v\shay.com/doc?91000
ZMY3V9 to ZMY100
www.vishay.com Vishay Semiconductors
Rev. 2.0, 12-Mar-2019 4Document Number: 85788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Breakdown Characteristics Fig. 8 - Breakdown Characteristics
PACKAGE DIMENSIONS in millimeters (inches): MELF DO-213AB (glass)
0 5 101520253035
40 45 50 V
10
20
30
40
50
60
mA
IZ
VZ
18310
Tj = 25 °C
ZMY...
Test Current lZ
25 mA
10 mA
ZMY22
ZMY18
ZMY27
ZMY33
ZMY15
ZMY39
ZMY47
0
18317
Foot print recommendation:
The gap between plug and glass can
be either on cathode or anode side
Cathode identification
4.00 (0.157)
max.
1.25 (0.049)
min.
ref.
6.50 (0.256)
2.6 (0.102)
2.4 (0.094)
0.55 (0.022)
5.2 (0.205)
4.8 (0.189)
3.00 (0.118)
min.
— VISHAY. V
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