1N4148W Datasheet

Vishay Semiconductor Diodes Division

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Datasheet

1N4148W
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Feb-18 1Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diodes
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature.
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Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N4148W 1N4148W-E3-08 or 1N4148W-E3-18 A2 Single Tape and reel
1N4148W-HE3-08 or 1N4148W-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100 V
Average rectified current half wave rectification with
resistive load (1) f 50 Hz IF(AV) 150 mA
Surge forward current tp < 1 s IFSM 500 mA
tp = 1 μs IFSM 2A
Power dissipation (1) Ptot 350 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 357 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
1N4148W
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Feb-18 2Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 10 mA VF1V
IF = 100 mA VF1.2 V
Leakage current
VR = 20 V IR25 nA
VR = 75 V IRA
VR = 100 V IR100 μA
VR = 20 V, TJ = 150 °C IR50 μA
Diode capacitance VF = VR = 0 V CD4pF
Voltage rise when switching ON
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr 2.5 V
Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100 trr 4ns
17437
012
V
F
(V)
IF (mA)
10
-1
10
-2
1
10
10
2
10
3
T
j
= 100 °C T
j
= 25 °C
17438
f = 1 kHz
T
j
= 25 °C
I
F
(mA)
R
f
(Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150
Tamb - Ambient Temperature (°C)
Ptot - Power Dissipation (mW)
20809
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
T
j
= 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)
1N4148W
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Feb-18 3Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
17442 tP (s)
IFRM (A)
100
1
3
5
10-5 10-4 10-3 1010-1
10-2 25 2 525 25 25 25
2
4
10
3
5
2
4
1
3
5
2
4
0.1
I
IFRM
T
n = tP/T T = 1/fP
t
tP
n = 0
0.1
0.2
0.5
1N4148W
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Feb-18 4Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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