B(V)SS84L Datasheet

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Datasheet

© Semiconductor Components Industries, LLC, 1997
March, 2019 Rev. 10
1Publication Order Number:
BSS84LT1/D
BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
SOT23 Surface Mount Package Saves Board Space
BV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 50 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
ID
IDM
130
520
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg 55 to
150
°C
Thermal Resistance JunctiontoAmbient RqJA 556 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
3
1
2
PChannel
SOT23
CASE 318
STYLE 21
PD MG
G
MARKING DIAGRAM & PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
Device Package Shipping
ORDERING INFORMATION
BSS84LT1G,
BVSS84LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BSS84LT7G SOT23
(PbFree)
3,500 / Tape & Reel
PD = Specific Device Code
M = Date Code
G= PbFree Package
(*Note: Microdot may be in either location)
50 V 10 W @ 10 V
V(BR)DSS RDS(ON) MAX
www.onsemi.com
BSS84L, BVSS84L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS 50 Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.1
15
60
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS ±10 nAdc
ON CHARACTERISTICS (Note 1)
GateSource Threaded Voltage (VDS = VGS, ID = 250 mA) VGS(th) 0.9 − −2.0 Vdc
Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) RDS(on) 4.7 10 W
Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) |yfs| 50 mS
DYNAMIC CHARACTERISTICS
Input Capacitance VDS = 5.0 Vdc Ciss 36 pF
Output Capacitance VDS = 5.0 Vdc Coss 17
Transfer Capacitance VDG = 5.0 Vdc Crss 6.5
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
VDD = 15 Vdc, ID = 2.5 Adc,
RL = 50 W
td(on) 3.6 ns
Rise Time tr9.7
TurnOff Delay Time td(off) 12
Fall Time tf1.7
Gate Charge VDD = 40 Vdc, ID = 0.5 A,
VGS = 10 V
QT2.2 nC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current IS − −0.130 A
Pulsed Current ISM − −0.520
Forward Voltage (Note 2) VGS = 0 V, IS = 130 mA VSD − −2.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
VDS = 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
VGS = -3.5 V
4
0.35
0.4
0.5
0.45 TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
BSS84L, BVSS84L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 3. OnResistance versus Drain Current
0 0.2 0.4 0.6
2
5
6
Figure 4. OnResistance versus Drain Current
-ID, DRAIN CURRENT (AMPS)
Figure 5. OnResistance Variation with Temperature
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
25°C
VGS = -4.5 V
VGS = -10 V
ID = -0.52 A
-55 -5 45 95 145
TJ = 150°C
4
0.6
0.8
0 0.5 1.0 1.5
3
0.01
-55°C25°C
2.0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6
2
5
6
-ID, DRAIN CURRENT (AMPS)
VGS = -10 V
4
3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
-6
-2
0
QT, TOTAL GATE CHARGE (pC)
-8
-4
500
VDS = -40 V
TJ = 25°C
1000
ID = -0.5 A
1500
0.1 0.3 0.5
150°C
-55°C
7
4.5
5.5
3.5
2.5
6.5
0.1 0.3 0.5
1.2
2
1.4
1.6
1.8
VGS = -4.5 V
ID = -0.13 A
2000
2.5 3.0
150°C
25°C
-55°C
8
9
7
-5
-1
-7
-3
ID, DRAIN CURRENT (AMPS)
BSS84L, BVSS84L
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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BSS84LT1/D
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