G3VM-61H1 Datasheet

Omron Electronics Inc-EMC Div

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Datasheet

Common Precautions for All MOS FET Relays
1
Always turn OFF the power supply before wiring
a Relay.
Not doing so may cause electrical shock.
Do not touch the current-carrying parts of the pin
section of a MOS FET Relay while the power is
being supplied.
An electrical shock may occur.
1. Do not apply overvoltages or overcurrents to the input or
output circuit of the MOS FET Relay.
The MOS FET Relay may fail or ignite.
2. Perform soldering and wiring correctly according to specified
soldering conditions.
Using a MOS FET Relay with incomplete soldering may cause
overheating when power is applied, possibly resulting in
burning.
Derating
You must consider derating to achieve the required system
reliability.
To use a MOS FET Relay with high reliability, consider derating
the maximum ratings and recommended operating conditions,
and allow sufficient leeway in designs based on testing operation
in the actual application under the actual operating conditions
whenever possible.
(1) Maximum Ratings
The maximum ratings must never be exceeded even
instantaneously. This applies individually to each of the
ratings. If any of the maximum ratings is exceeded, the internal
parts of the MOS FET Relay may deteriorate or the chip may
be destroyed. To ensure high reliability in using a MOS FET
Relay, sufficiently derate the maximum voltage, current, and
temperature ratings when designing the application.
(2) Recommended Operating Conditions
The recommended operating conditions are to ensure that
the MOS FET Relay turns ON and OFF reliably.
To ensure high reliability in using a MOS FET Relay,
consider the recommended operating conditions when you
design the application.
(3) Fail-safe Design
We recommend that you implement fail-safe measures in
the design of the application if the failure of, deterioration of
characteristics in, or functional errors in the MOS FET Relay
will have a serious affect on the safe operation of the
system.
Countermeasures for static electricity
There is a risk of damage to internal elements and impairment of
functionality if static electricity is discharged to the pins due to
product handling or otherwise.
Reduce the generation of static electricity as much as possible,
and implement appropriate measures to prevent charge
accumulation near the product.
Typical MOS FET Relay Driving Circuit Examples
The LED input side of the MOS FET is driven by current. If
applying a Voltage, add resistance in series with the circuit, so
the specified current is applied.
This resistance is referred as "LED current limiting resistance".
To ensure that the MOSFET relay operates correctly, use the
following formula to calculate the limiting resistance, and
design the circuit accordingly.
Note: To set the value of IF(ON), check the trigger LED current and
recommended operation LED forward current indicated in the
catalogue for each model, and set a high value with leeway.
To ensure that the MOSFET relay resets reliably, calculate the
reset voltage using the formula below, and control so that the
voltage is lower than this value.
Note: For the IF(OFF) value, set a value that is lower with leeway than the
reset LED forward current indicated for each model in the catalogue.
If the drive transistor has a large leakage current that may
cause malfunctioning, add a bleeder resistance.
Protection from Surge Voltage on the Input Pins
If any reversed surge voltage is imposed on the input pins,
insert a diode in parallel with the input pins as shown in the
following circuit diagram and do not impose a reversed voltage
of 3 V or higher.
WARNING
Precautions for Safe Use
Precautions for Correct Use
6
5
4
1
2
3
Load
10 to 100 kΩ
(bleeder resistor)
+Vcc
VF
VIN VOL/OH
R1
C-MOS
6
5
4
1
2
3
Load
+Vcc
VF
VIN VOL/OH
R1
C-MOS
Transistor
R1 =VCC VOL VF(ON)
IF
VF(OFF)=VCC IFR1 VOH
6
5
4
1
2
3
Surge Voltage Protection Circuit Example
Common Precautions for All MOS FET Relays
2
Protection from Spike Voltage on the Output Pins
If there is an inductive load or other condition that will cause
overvoltage that exceeds the absolute maximum rating
between the output pins, connect a protective circuit to limit
the overvoltage.
Unused Pin
The unused pins of each MOSFET relay are used in the internal
circuitry. Do not connect to an external circuit.
Pin Strength for Automatic Mounting
In order to maintain the characteristics of the MOS FET Relay,
the force imposed on any pin of the MOS FET Relay for
automatic mounting must not exceed the following limits.
Load Connection
Do not short-circuit the input and output pins while the MOS
FET Relay is operating or it may malfunction.
Example of correct connection
Estimated Life
OMRON MOS FET Relays use mainly two types of LEDs. The
service life is estimated separately for each type of LED.
The following tables show the LEDs that are used in each MOS
FET Relay. Estimated life data is given on pages 3 and 4.
Ask your OMRON representative for any models that are not
listed in the table.
This data is the results of estimating the service life from
long-term data on a single lot. Use it only as reference data.
MOS FET Relays That Use GaAs LEDs
MOS FET Relays That Use GaAlAs LEDs
6
5
4
1
2
3
6
5
4
1
2
3
6
5
4
1
2
3
Spike Voltage Protection Circuit Example
Unused Pin
65
123
4
(Example for 6-pin Relay)
(Example of 8-pin high-capacity type)
8
1
7
2
6
3
5
4
Unused Pin
AB
In direction A: 1.96 N
In direction B: 1.96 N
DIP SOP SSOP
G3VM-61A1/D1 G3VM-21GR G3VM-S5 G3VM-21LR
G3VM-61B1/E1 G3VM-21GR1 G3VM-201H1 G3VM-21LR1
G3VM-62C1/F1 G3VM-41GR4 G3VM-202J1 G3VM-41LR4
G3VM-2L/2FL G3VM-41GR5 G3VM-351G G3VM-41LR5
G3VM-351A/D G3VM-41GR6 G3VM-351G1 G3VM-41LR6
G3VM-351B/E G3VM-41GR8 G3VM-351GL G3VM-61LR
G3VM-352C/F G3VM-61G1 G3VM-351H G3VM-81LR
G3VM-353A/D G3VM-61G2 G3VM-352J G3VM-101LR
G3VM-353B/E G3VM-61GR1 G3VM-353G USOP
G3VM-354C/F G3VM-61H1 G3VM-353H G3VM-21PR10
G3VM-355CR/FR
G3VM-62J1 G3VM-354J G3VM-21PR11
G3VM-WL/WFL G3VM-81G1 G3VM-355JR G3VM-41PR10
G3VM-401A/D G3VM-81GR G3VM-401G G3VM-41PR11
G3VM-401B/E G3VM-81GR1 G3VM-401H G3VM-41PR12
G3VM-401BY/EY G3VM-81HR G3VM-402J G3VM-51PR
G3VM-402C/F G3VM-201G G3VM-601G G3VM-61PR
G3VM-601BY/EY G3VM-201G1 G3VM-61PR1
DIP SOP SSOP SSOP
G3VM-21AR/DR G3VM-61BR/ER G3VM-21HR G3VM-21LR10
G3VM-21BR/ER
G3VM-61BR1/ER1
G3VM-41HR G3VM-41LR10
G3VM-41AR/DR
G3VM-101AR/DR
G3VM-61HR G3VM-41LR11
G3VM-41BR/ER G3VM-101BR/ER G3VM-101HR
G3VM-61AR/DR
6
5
4
1
2
3
AC DCDC
DC
6
5
4
1
2
3
DC
6
5
4
1
2
3
DC
6
5
4
1
2
3
AC
DC
DC
DC
Load Or Or Or
Load
Load
Load
Or
Load
Or
Or
Load
Load
Load
+
+
+
+
+
+
+
+
+
+
+
+
AC/DC connection (A connection)
DC Single Connection (B connection)
DC Parallel Connection (C connection)
Common Precautions for All MOS FET Relays
3
Data on Estimated Temporal Changes in GaAs LEDs Estimated Life Data for GaAs LEDs
The above estimated life data is reference data that was based
on LED long-term appraisal for a single lot.
Operating conditions that exceed the ratings for some models
are included, but this in no way implies any warranty for
operation that exceeds the ratings.
F50% Life:
For the life to a 50% cumulative failure rate, this is the time that is
required for the AVG average line in the data on estimated
temporal changes to reach the failure criteria.
F0.1% Life:
For the life to a 0.1% cumulative failure rate, this is the time that
is required for the AVG-3α line in the data on estimated temporal
changes to reach the failure criteria.
Whether to use estimated F50% life or F0.1% life should be
determined based on the reliability required in the actual
equipment, however, estimated F0.1% life is normally
recommended.
"Optical output deterioration Δpo" is the amount of LED optical
output deterioration compared to the initial LED output. When
"Optical output deterioration failure criterion Δpo < - 50%", a
failure is detected when optical output has deteriorated 50%
from the initial output.
Whether to use optical output deterioration Δpo < - 50% or Δpo
< - 30% should be determined based on the amount of leeway to
be provided in the LED forward current (IF) setting with respect to
the trigger LED forward current (IFT). However, the Δpo < - 30%
graph is normally recommended.
Test conditions:
IF = 50 mA, Ta = 40°C
0
20
40
60
80
100
120
140
1 10 100 1000 10000 100000
Test time (h)
Relative rate of change in light output Po (%)
Rate of change average (%)
Rate of change average – 3σ (%)
Test conditions:
IF = 20 mA, Ta = 40°C
0
20
40
60
80
100
120
140
Test time (h)
Relative rate of change in light output Po (%)
1 10 100 1000 10000 100000
Rate of change average (%)
Rate of change average – 3σ (%)
Test conditions:
IF = 10 mA, Ta = 40°C
0
20
40
60
80
100
120
140
Test time (h)
Relative rate of change in light output Po (%)
1 10 100 1000 10000 100000
Rate of change average (%)
Rate of change average – 3σ (%)
Common Precautions for All MOS FET Relays
4
Data on Estimated Temporal Changes in GaAlAs LEDs Estimated Life Data for GaAlAs LEDs
The above estimated life data is reference data that was based
on LED long-term appraisal for a single lot.
Operating conditions that exceed the ratings for some models
are included, but this in no way implies any warranty for
operation that exceeds the ratings.
F50% Life:
For the life to a 50% cumulative failure rate, this is the time that is
required for the AVG average line in the data on estimated
temporal changes to reach the failure criteria.
F0.1% Life:
For the life to a 0.1% cumulative failure rate, this is the time that
is required for the AVG-3α line in the data on estimated temporal
changes to reach the failure criteria.
Whether to use estimated F50% life or F0.1% life should be
determined based on the reliability required in the actual
equipment, however, estimated F0.1% life is normally
recommended.
"Optical output deterioration Δpo" is the amount of LED optical
output deterioration compared to the initial LED output. When
"Optical output deterioration failure criterion Δpo < - 50%", a
failure is detected when optical output has deteriorated 50%
from the initial output.
Whether to use optical output deterioration Δpo < - 50% or Δpo
< - 30% should be determined based on the amount of leeway to
be provided in the LED forward current (IF) setting with respect to
the trigger LED forward current (IFT). However, the Δpo < - 30%
graph is normally recommended.
Failure criteria: Light output deterioration ΔPo < −50%
100
1000
10000
100000
1000000
10000000
5432
Ambient temperature (°C)
Estimated life (h)
IF=10mA
IF=20mA
IF=30mA
IF=40mA
IF=50mA
IF=10mA
IF=20mA
IF=30mA
IF=40mA
IF=50mA
Estimated F50% life
Estimated F0.1% life
227 150 100 85 60 25 0 -30 -50 -73
1/K(x10-3)
Failure criteria: Light output deterioration ΔPo < −30%
100
1000
10000
100000
1000000
10000000
5432
Ambient temperature (°C)
Estimated life (h)
IF=10mA
IF=20mA
IF=30mA
IF=40mA
IF=50mA
IF=10mA
IF=20mA
IF=30mA
IF=40mA
IF=50mA
Estimated F50% life
Estimated F0.1% life
227 150 100 85 60 25 0 -30 -50 -73
1/K(x10-3)
Common Precautions for All MOS FET Relays
5
Cleaning Flux from the MOS FET Relays
(1) Clean flux from the MOS FET Relay so that there will be no
residue of reactive ions, such as sodium or chlorine.
Some organic solvents will react with water to produce
hydrogen chloride or other corrosive gases, which may
cause deterioration of the MOS FET Relays.
(2) When washing off the flux with water, make sure that there
will be no residue of reactive ions, particularly sodium or
chlorine.
(3) During water washing, do not scrub the marks on the
surface of the MOS FET Relay with a brush or your hand
while there is cleaning liquid on the MOS FET Relay. The
marks may come off.
(4) Clean the flux from the MOS FET Relays with the chemical
action of the solvent for submersed cleaning, shower cleaning,
or steam cleaning. To minimize the effect on the MOS FET
Relays, do not place the MOS FET Relay in the solvent or
steam for more than 1 minute at a temperature of 50°C.
(5) If you use ultrasonic cleaning, keep the time short. If the
cleaning time is too long, the sealing characteristics of the
molded resin and frame materials may deteriorate.
The recommended basic conditions are given below.
Recommended Conditions for Ultrasonic Cleaning:
Frequency: 27 to 29 kHz
Ultrasonic wave output: 300 W max. (0.25 W/cm2 max.)
Cleaning time: 30 s max.
Also, suspend the MOS FET Relays in the cleaning solution so
that the MOS FET Relay and PCB do not come into direct
contact with the ultrasonic transducer.
Solder Mounting
Perform solder mounting under the following recommended
conditions to prevent the temperature of the MOS FET Relays
from rising.
<Flow Soldering>
PCB Terminals
(Set Temperature of Flow Bath)
Note: We recommend that you verify the suitability of solder mounting under
actual conditions.
Surface-mount Terminals
If you are considering mounting a surface mount pin type by flow
soldering, please consult us.
<Reflow Soldering>
Surface-mount Terminals
(Surface Temperature of Package)
(Lead-free solder) SnAgCu recommended profile
Note: 1. We recommend that you verify the suitability of solder mounting under
actual conditions.
2. When SSOP, USOP, VSON, or S-VSON products are ordered with
(TR), tape package product is delivered in moisture-proof packaging.
If ordered without (TR), tape-cut product is delivered in non moisture-
proof packaging. Mount a tape cut product by manual soldering. Tape
cut products absorb moisture because a non moisture-proof package
is used. Risk of package cracking or other damage due to thermal
stress if reflow soldering is performed.
Manual Soldering (Once Only)
Perform manual soldering at 350°C for 3 s or less or at 260°C
for 10 s or less.
Note: Please consult us for manual soldering conditions for S-VSON
products.
Storage Conditions
(1) Store the MOS FET Relay where they will not be subjected
to water leaks or direct sunlight.
(2) When transporting or storing the MOS FET Relays, observe
all precautions on the packaging boxes.
(3) Keep the storage location at normal temperature, normal
humidity, and normal pressure. Guidelines for the
temperature and humidity are 5 to 35°C and a relative
humidity of 45% to 75%.
(4) Do not store the MOS FET Relay in locations that are
subject to corrosive gases, such as hydrogen sulfide gas, or
to salt spray, and do not store them where there is visually
apparent dust or dirt.
(5) Store the MOS FET Relay in a location that has a relatively
stable temperature. Radical changes in temperature during
storage will cause condensation, which may oxidize or
corrode the leads and interfere with solder wetting.
(6) If you remove MOS FET Relays from the packages and then
store them again, use storage containers that have
measures to prevent static electricity.
(7) Do not under any circumstances apply any force to the MOS
FET Relays that would deform or alter them in any way.
(8) This product is warranted for one year from the date of
purchase or the date of delivery to the specified location.
If the MOS FET Relays are stored for more than about one
year under normal conditions, we recommend that you
confirm solderability before you use the MOS FET Relays.
Solder type Preheating Soldering Count
(Lead solder)
SnPb
150°C
60 to 120 s
260°C
10 s max. Once only
(Lead-free solder)
SnAgCu
150°C
60 to 120 s
260°C
10 s max. Once only
Solder type Preheating Soldering Count
(Lead solder)
SnPb
140 to 160°C
60 to 120 s
210°C
30 s max.
Peak:
240°C max. Up to twice
60 to 120
60 to 150
30MAX
Time (s)Reflow repetitions : Up to twice
255
217
3°C/s 6°C/s
260°C PEAK
200
150
25
Surface Temperature of Package
Common Precautions for All MOS FET Relays
6
Usage Conditions
<Temperature>
The electrical characteristics of the MOS FET Relays are limited
by the application temperature.
If you use them at temperatures outside of the operating
temperature range, the electrical characteristics of the MOS FET
Relays will not be achieved and the MOS FET Relays may
deteriorate. For that reason, you must determine the
temperature characteristics in advance and apply derating* to
the design of the application. (*Derating reduces stress.)
Consider derating in the operating temperature conditions and
apply the recommended operating temperature as a guideline.
<Humidity>
If the MOS FET Relays are used for a long period of time at high
humidity, humidity will penetrate the Relays and the internal
chips may deteriorate or fail. In systems with high signal source
impedance, leaks in the board or leaks between the leads of the
MOS FET Relays can cause malfunctions. If these are issues,
consider applying humidity-resistant processing to the surfaces
of the MOS FET Relays. On the other hand, at low humidity,
damage from the discharge of static electricity becomes a
problem. Low humidity may cause damage due to electrostatic
discharge. Unless moisture proofing is implemented, use within
a relative humidity range of 40 to 60%.
Considerations when handling SSOP, USOP, VSON, and
S-VSON products
<Moisture proof package, MSL3> (Other packages are MSL1)
Surface mount products may have a crack when thermal stress
is applied during surface mount assembly after they absorb
atmospheric moisture. Therefore, please observe the following
precautions.
(1) This moisture proof bag may be stored unopened within 12
months at the following conditions.
Temperature: 5°C to 30°C
Humidity: 90% (Max.)
(2) After opening the moisture proof bag, the devices should be
assembled within 168 hours in an environment of 5°C to
30°C / 70%RH or below.
(3) If upon opening, the moisture indicator card shows humidity
30% or above (Color of indication changes to pink) or the
expiration date has passed, the devices should be baked in
taping with reel. After baking, use the baked devices within
72 hours, but perform baking only once.
Baking conditions: 60±5°C. For 64 to 72 hours.
Expiration date: 12 months from sealing date, which is
imprinted on the label affixed.
(4) Repeated baking can cause the peeling strength of the
taping to change, then leads to trouble in mounting.
Furthermore, prevent the devices from being destructed
against static electricity for baking of it.
(5) If the packing material of laminate would be broken the
hermeticity would deteriorate.
Therefore, do not throw or drop the packed devices.
(6) Tape-cut SSOPs, USOPs, VSONs, or S-VSON are
packaged without humidity resistance. Use manual
soldering to mount them. (MSL not supported)
Tape Packaging
<Tape Form and Dimensions>
Unit: mm
<Reel Form and Dimensions>
Type of package DIP4 DIP6 DIP8 Special
SOP4 SOP4
Dimension symbol (See figure.)
A
Dimensions
10.4±0.1 4.0±0.1 4.3±0.1
B5.1±0.1 7.6±0.1 10.1±0.1 7.6±0.1 7.5±0.1
C16±0.3 12±0.3
D7.5±0.1 5.5±0.1
E1.75±0.1
F12.0±0.1 8.0±0.1
G4.0±0.1
J1.5+0.1/-0
k4.55±0.2 2.9±0.2 2.6±0.2
kO4.1±0.1 2.6±0.1 2.4±0.1
t0.4±0.05 0.3±0.05
Type of package SOP6 SOP8 SSOP4 USOP4 VSON4
S-VSON4
Dimension symbol (See figure.)
A
Dimensions
7.5±0.1 2.35±0.2 2.6±0.1 1.6±0.1
B6.7±0.1 10.5±0.1 4.5±0.1 3.55±0.1 3.0±0.1 2.25±0.1
C16±0.3 12±0.3 8.0±0.3
D7.5±0.1 5.5±0.1 3.5±0.1
E1.75±0.1
F12.0±0.1 4.0±0.1
G4.0±0.1
J1.5+0.1-0
k2.5±0.2 2.4±0.2 2.4±0.1 2.25±0.1
kO2.3±0.1 2.2±0.1 2.1±0.1 1.95±0.1 1.5±0.1 1.85±0.1
t0.3±0.05 0.3±0.1 0.2±0.05
Unit: mm
DIP/SOP
SOP4 special (TR)
SSOP/USOP/VSON/S-VSON
SOP4 special (TR05)
A
U
E
C B
W1
W2
DIP (TR05)
Common Precautions for All MOS FET Relays
7
Unit: mm
<Taping Direction>
The orientations of the MOS FET Relays in the depressions in
the carrier tapes are shown below.
(1) SOP4 Pins
(2) SOP6, SOP8, DIP4, DIP6, or DIP8 Pins
(3) SSOP4, USOP4, VSON4, S-VSON4 pin types
<Number of Relays Per Reel>
Stick packaging
<Stick shape and dimensions>
Type of
package DIP4 DIP6 DIP8
Special
SOP4
SOP4 SOP6 SOP8
Tape name (TR05) (TR)
Dimension symbol (See figure.)
A
Dimensions
254±2 dia. 380±2 dia. 330±2 dia.
B100±1 dia. 80±1 dia.
C13±0.2 dia. 13±0.5 dia.
E2.0±0.5 2.0±0.5
U4.0 4.0±0.5
W1 17.4±1.0 17.5±0.5 13.5±0.5 17.5±0.5
W2 21.4±1.0 21.5±1.0 17.5±1.0 21.5±1.0
Type of
package
Special
SOP4 SSOP4 USOP4 VSON4 S-VSON4
Tape name (TR05)
Dimension symbol (See figure.)
A
Dimensions
180±2.0 dia. 180+0/-4 dia. 180±3 dia.
B60±1.0 dia. 60 dia. 60±1 dia.
C13±0.5 dia. 13 dia. 13±0.5 dia.
E2.0±0.5
U4.0±0.5 dia. --- 4.0±0.5
W1 13.5±0.5 dia. 13±0.3 9.0±0.3
W2 17.5±1.0 dia. 15.4±1.0 11.4±1.0
Pin 1
Tape feeding direction
Pin 1 Tape feeding direction
Pin 1
Tape feeding direction
Type of package DIP4 DIP6 DIP8 Special
SOP4 SOP4 SOP6 SOP8
Number of
Relays
TR 1,500 3,000 2,500
TR05 500 500
Type of package SSOP4 USOP4 VSON4 S-VSON4
Number of
Relays
TR
TR05 500
Type of
package DIP4 DIP6 DIP8 DIP4 DIP6 DIP8
Special
SOP4
SOP4 SOP6 SOP8
Pin type
Printed circuit
board pin
Surface-mount
pin
Number of
Relays 100 50 50 100 50 50 125 100 75 50
Height
(mm) 10.3 10 6.2
Width
(mm) 11.3 14 10.5
Length
(mm) 525 525 555
11.3
DIP
(Printed circuit board pin)
SOPSOP4 (special)
DIP
(Surface-mount pin)
10.3
14
10
10.5
6.2
10.5
6.2
Unit: mm
Application examples provided in this document are for reference only. In actual applications, confirm equipment functions and safety before using the product.
Consult your OMRON representative before using the product under conditions which are not described in the manual or applying the product to nuclear control systems, railroad
systems, aviation systems, vehicles, combustion systems, medical equipment, amusement machines, safety equipment, and other systems or equipment that may have a serious
influence on lives and property if used improperly. Make sure that the ratings and performance characteristics of the product provide a margin of safety for the system or
equipment, and be sure to provide the system or equipment with double safety mechanisms.
OMRON Corporation
Electronic and Mechanical Components Company
Contact: www.omron.com/ecb
Cat. No. K245-E1-03
0617(0412)(O)
Note: Do not use this document to operate the Unit.

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SSR RELAY SPST-NO 120MA 0-40V
Cantidad disponible4965
Precio por unidad10.1
SSR RELAY SPST-NO 1.5A 0-200V
Cantidad disponible3549
Precio por unidad10.41
SSR RELAY SPST-NC 120MA 0-350V
Cantidad disponible4963
Precio por unidad5.98
SSR RELAY SPST-NO 2.5A 0-60V
Cantidad disponible1693
Precio por unidad10.91
SSR RELAY SPST-NO 450MA 0-20V
Cantidad disponible63629
Precio por unidad11.06