ADG849 Datasheet

Analog Devices Inc.

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Datasheet

3 V/5 V CMOS
0.5 Ω SPDT/2:1 Mux in SC70
ADG849
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
FEATURES
Ultralow on-resistance:
0.5 Ω typical
0.8 Ω maximum at 5 V supply
Excellent audio performance, ultralow distortion:
0.13 Ω typical
0.24 Ω maximum RON flatness
High current carrying capability:
400 mA continuous current
600 mA peak current at 5 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
Pin-compatible upgrade for the ADG749 and ADG779
APPLICATIONS
Cellular phones
PDAs
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
FUNCTIONAL BLOCK DIAGRAM
ADG849
IN
S1
S2 D
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
04737-0-001
Figure 1.
GENERAL DESCRIPTION
The ADG849 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to 5.5 V.
It is designed to offer ultralow on-resistance values of typically
0.5 Ω. This design makes the ADG849 an ideal solution for
applications that require minimal distortion through the switch.
The ADG849 also has the capability of carrying large amounts
of current, typically 600 mA at 5 V operation.
Each switch of the ADG849 conducts equally well in both
directions when on. The device exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.
The ADG849 is available in a tiny, 6-lead SC70 package, making
it the ideal candidate for space-constrained applications.
PRODUCT HIGHLIGHTS
1. Very low on-resistance, 0.5 Ω typical.
2. Tiny, 6-lead SC70 package.
3. Low power dissipation. The CMOS construction ensures
low power dissipation.
4. High current carrying capability.
5. Low THD + noise (0.01% typ).
ADG849
Rev. 0| Page 2 of 12
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics ..............................................7
Test Circ uits ........................................................................................9
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
7/04—Revision 0: Initial Version
ADG849
Rev. 0| Page 3 of 12
SPECIFICATIONS
Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V1
Parameter +25°C
–40°C to
+85°C
–40°C to
+125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On-Resistance (RON) 0.5 typ
VS = 0 V to VDD, IDS = 100 mA
0.6 0.7 0.8 Ω max See Figure 15
On-Resistance Match Between Channels
(∆RON) 0.05 typ
VS = 0.85 V, IDS = 100 mA
0.095 0.11 0.125 max
On-Resistance Flatness (RFLAT(ON)) 0.13 typ
VS = 0 V to VDD, IDS = 100 mA
0.18 0.22 0.24 max
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V,
see Figure 16
Channel On Leakage, ID, IS (On) ±0.04 nA typ VS = VD = 1 V, or VS = VD = 4.5 V,
see Figure 17
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.8 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS2
tON 11 ns typ RL = 50 Ω, CL = 35 pF
15 17 18 ns max VS = 3 V, see Figure 18
tOFF 9 ns typ RL = 50 Ω, CL = 35 pF
13 14 15 ns max VS = 3 V, see Figure 18
Break-Before-Make Time Delay, tBBM 5 ns typ
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,
see Figure 19
1 ns min
Charge Injection 50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
Off Isolation –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23
Insertion Loss 0.04 dB typ RL = 50 Ω, CL = 5 pF, see Figure 23
THD + N 0.01 % RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 2 V p-p
CS (Off) 52 pF typ
CD, CS (On) 145 pF typ
POWER REQUIREMENTS VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V
IDD 0.001 µA typ
1.0 µA max
1The temperature range for the Y version is –40°C to +125°C.
2 Guaranteed by design, not subject to production test.
ADG849
Rev. 0| Page 4 of 12
Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V1
Parameter +25°C
–40°C to
+85°C
–40°C to
+125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On-Resistance (RON) 0.72 typ VS = 0 V to VDD, IDS = –100 mA
1.1 1.1 1.2 Ω max See Figure 15
On-Resistance Match Between Channels
(∆RON) 0.05 typ VS = 1.5 V, IDS = –100 mA
0.095 0.11 0.125 max
On-Resistance Flatness (RFLAT(ON)) 0.3 typ VS = 0 V to VDD, IDS = –100 mA
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage, IS (Off) ±0.1 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 3 V;
see Figure 17
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.8 V max VDD = 3 V to 3.6 V
0.7 V max VDD = 2.7 V
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS2
tON 16 ns typ RL = 50 Ω, CL = 35 pF
22 24 26 ns max VS = 1.5 V, see Figure 18
tOFF 13 ns typ RL = 50 Ω, CL = 35 pF
18 20 22 ns max VS = 1.5 V, see Figure 18
Break-Before-Make Time Delay, tBBM 7 ns typ
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V,
see Figure 19
1 ns min
Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
Off Isolation –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23
Insertion Loss 0.04 dB typ RL = 50 Ω CL = 5 pF, see Figure 23
THD + N 0.02 % RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 1 V p-p
CS (Off) 55 pF typ f = 1 MHz
CD, CS (On) 147 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
IDD 0.001 µA typ
1.0 µA max
1The temperature range for the Y version is –40°C to +125°C.
2 Guaranteed by design, not subject to production test.
ADG849
Rev. 0| Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 3. TA = 25°C, unless otherwise noted
Parameter Rating
VDD to GND –0.3 V to +7 V
Analog Inputs1–0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Digital Inputs1 –0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D 600 mA (pulsed at 1 ms,
10% duty cycle maximum)
Continuous Current, S or D 400 mA
Operating Temperature Range
Extended –40°C to +125°C
Storage Temperature Range –65°C to +150°C
Junction Temperature +150°C
SC70 Package
θJA Thermal Impedance 332°C/W
θJC Thermal Impedance 120°C/W
Reflow Soldering
Peak Temperature 260(0/–5)°C
Time at Peak Temperature 10 sec to 40 sec
1 Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Table 4. Truth Table
IN Switch S1 Switch S2
0 On Off
1 Off On
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADG849
Rev. 0| Page 6 of 12
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
TOP VIEW
(Not to Scale)
6
5
4
1
2
3
IN S2
ADG849
V
DD
GND
D
S1
04737-0-002
Figure 2. Pin Configuration
Table 5. Terminology
Mnemonic Function
VDD Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
IDD Positive Supply Current.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input.
RON Ohmic Resistance between D and S.
∆RON On-Resistance Match Between any Two Channels i.e., RON Maximum to RON Minimum.
RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
IS (Off) Source Leakage Current with the Switch Off.
ID, IS (On) Channel Leakage Current with the Switch On.
VD (VS) Analog Voltage on Terminals D, S.
VINL Maximum Input Voltage for Logic 0.
VINH Minimum Input Voltage for Logic 1.
IINL (IINH) Input Current of the Digital Input.
CS (Off) Off Switch Source Capacitance. Measured with reference to ground.
CD, CS (On) On Switch Capacitance. Measured with reference to ground.
tON Delay time between the 50% and 90% points of the digital input and switch on condition.
tOFF Delay time between the 50% and 90% points of the digital input and switch off condition.
tBBM On or off time measured between the 80% points of both switches when switching from one to another.
Charge
Injection
A measure of the glitch impulse transfered from the digital input to the analog output during switching.
Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through an off switch.
Bandwidth The frequency at which the output is attenuated by 3 dB.
On-Response The frequency response of the on switch.
Insertion Loss The loss due to the on-resistance of the switch.
THD + N The ratio of harmonic amplitudes plus the noise of a signal to the fundamental.
ADG849
Rev. 0| Page 7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
04737-0-003
0
0.1
0.3
0.4
0.5
0.6
0123456
V
S
/V
D
(V)
R
ON
()
5V
4.5V
T
A
= 25°C
0.2
5.5V
Figure 3. On-Resistance vs. VD/VS, VDD = 5 V ±10%
04737-0-004
0
V
S
/V
D
(V)
R
ON
()
3.6V
3.3V
3V
2.7V
2.5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.5 1.0 1.5 2.0 2.5 3.0 3.50
Figure 4. On-Resistance vs. VD/VS, VDD = 2.5 V to 3.6 V
04737-0-005
0
0.1
0.3
0.4
0.5
0.6
5.0
V
S
/V
D
(V)
ON RESISTANCE ()
0.2
0.7
0.8
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
+125
°
C
+85
°
C
+25
°
C
–40
°
C
Figure 5. On-Resistance vs. Temperature, VDD = 5 V
04737-0-006
0
0.1
0.3
0.4
0.5
0.6
V
S
/V
D
(V)
ON RESISTANCE ()
0.2
0.7
1.0
0
+125
°
C
+85
°
C
+25
°
C
–40
°
C
0.5 1.0 1.5 2.0 2.5 3.0
0.9
0.8
Figure 6. On-Resistance vs. Temperature, VDD = 3 V
0
20
40
60
80
100
120
10 40 60 100 120
TEMPERATURE (°C)
LEAKAGE (nA)
04737-0-017
20 80
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 5V
Figure 7. Leakage Currents vs. Temperature, VDD = 5 V
0
20
40
60
80
90
10 40 60 100 120
TEMPERATURE (°C)
LEAKAGE (nA)
04737-0-018
20 80
10
30
50
70
I
D
, I
S
(ON)
I
S
(OFF)
V
DD
= 3V
Figure 8. Leakage Currents vs. Temperature, VDD = 3 V
ADG849
Rev. 0| Page 8 of 12
04737-0-011
0
50
100
150
200
250
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN VOLTAGE (V)
CHARGE INJECTION (pC)
V
DD
= 5V
V
DD
= 3V
T
A
= 25°C
Figure 9. Charge Injection
0
2
4
6
8
10
12
14
16
18
20
TEMPERATURE (°C)
TIME (ns)
t
ON
t
ON
t
OFF
t
OFF
–40 –20 0 20 40 60 80 100 120
V
DD
= 5V
V
DD
= 3.3V
04737-0-012
Figure 10. tON/tOFF vs. Temperature
–9
–8
–7
–6
–5
–4
–3
–2
–1
0
1
10k 100k 1M 10M 100M
FREQUENCY (MHz)
ON RESPONSE (dB)
T
A
= 25°C
V
DD
= 5V/3V
04737-0-013
Figure 11. Bandwidth
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
10k 100k 1M 10M 100M
FREQUENCY (MHz)
OFF ISOLATION (dB)
T
A
= 25°C
V
DD
= 5V/3V
04737-0-014
Figure 12. Off Isolation vs. Frequency
–80
–70
–60
–50
–40
–30
–20
–10
0
10k 100k 1M 10M 100M
FREQUENCY (MHz)
CROSSTALK (dB)
T
A
= 25°C
V
DD
= 5V/3V
04737-0-015
Figure 13. Crosstalk vs. Frequency
04737-0-019
FREQUENCY (kHz)
20 40 80 100 120 140 200
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
THD + N (%)
60 160 180
2V p-p 1V p-p
V
DD
= 5V
Figure 14. Total Harmonic Distortion + Noise
ADG849
Rev. 0| Page 9 of 12
TEST CIRCUITS
SD
V1
V
S
R
ON
= V1/I
DS
I
DS
04737-0-008
Figure 15. On-Resistance
SD
V
S
V
D
I
D
(OFF)I
S
(OFF)
04737-0-009
Figure 16. Off-Leakage
SD
V
D
I
D
(ON)
NC
A
04449-0-021
Figure 17. On-Leakage
04449-0-022
D
IN
GND
RL
50
C
L
35pF
V
DD
V
IN
V
OUT
V
S
V
DD
V
OUT
t
ON
t
OFF
50% 50%
90% 90%
0.1µF
S2
S1
Figure 18. Switching Times, t
ON
, t
OFF
V
OUT
V
IN
t
BBM
t
BBM
50% 50%
80%
0V
D
IN
GND
RL
50
C
L
35pF
V
DD
V
OUT
V
S
V
DD
0.1µF
S2
S1 80%
04449-0-023
Figure 19. Break-Before-Make Time Delay, t
BBM
04449-0-024
IN
GND
V
DD
V
S
V
IN
V
OUT
1nF
V
OUT
NC
SW ON
Q
INJ
= CL ×∆V
OUT
SW OFF
V
OUT
S2
S1
D
Figure 20. Charge Injection
ADG849
Rev. 0| Page 10 of 12
04449-0-025
V
DD
V
S
V
DD
NC
NETWORK
ANALYZER
S2 S1
GND
OFF ISOLATION = 20 LOG
D
5050
V
OUT
R
L
50
0.1µF
V
OUT
VS
Figure 21. Off Isolation
GND
V
DD
0.1µF
S2
S1
D
NETWORK
ANALYZER
V
OUT
R
L
50
V
S
R
50
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG V
OUT
V
S
V
DD
50
04737-0-016
Figure 22. Channel-to-Channel Crosstalk
NETWORK
ANALYZER
R
L
GND
V
DD
V
DD
V
OUT
V
S
S1S2
0.1µF
D
50
50
INSERTION LOSS = 20 LOG V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
04449-0-026
Figure 23. Bandwidth
ADG849
Rev. 0| Page 11 of 12
OUTLINE DIMENSIONS
0.22
0.08 0.46
0.36
0.26
0.30
0.15
1.00
0.90
0.70
SEATING
PLANE
1.10 MAX
3
5 4
2
6
1
2.00 BSC
PIN 1
2.10 BSC
0.65 BSC
1.25 BSC
1.30 BSC
0.10 MAX
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB
Figure 24. 6-Lead SC70 Package
[KS-6]
Dimensions shown in Millimeters
ORDERING GUIDE
Model Temperature Range Package Description
Package
Option Branding1
ADG849YKSZ-500RL72–40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
ADG849YKSZ-REEL2 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
ADG849YKSZ-REEL72 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
1 Branding on all packages is limited to three characters due to space constraints.
2 Z = Pb-free part.
ADG849
Rev. 0| Page 12 of 12
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04737-0-7/04(0)

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