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Customer Use Cases

Meet some of the Revolutionaries inspired to create innovative systems using Transphorm GaN.

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Design Guides

Design guides using High performing and reliable GaN Technology.

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Learn about the wide-bandgap semiconductor material that achieves performance never before possible.

Featured Videos

4kW Bridgeless PFC Eval Board | Datasheet Preview
Reference Design 3300 W Bridgeless Totem Pole PFC Animation
Transphorm GaN FET Quality and Reliability Presentation
Transphorms GaN FET versus e-Mode Introduction Presentation
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Recent PTMs

5 minutes
GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies
Overview of GaN versus Silicon Carbide in DC-DC hard switched synchronous boost converter, including a competitive analysis and PFC customer example.
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About Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

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