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- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

GaN for LiDAR

Image of EPC's GaN for LiDAR

EPC’s Alex Lidow explains why eGaN FETs and ICs excel at powering LiDAR lasers and why both solid-state and rotating LiDAR units will have roles in autonomous vehicles, robotics, and drones. Learn More


Image of EPC's eGaN Integrated Circuits Gate Driver plus FET

Power transistors made with eGaN technology can switch in a nanosecond or less. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor simplifies the design and lowers the cost of power electronics. Learn More

48 V – 12 V DC-DC with GaN, More Efficient, Smaller and Lower Cost

Image of EPC's DC/DC Conversion

The EPC9130 development board is a 500 kHz switching frequency, 48 V nominal input voltage, 60 A maximum output current, 5-phase intermediate bus converter (IBC) with onboard microcontroller and gate drives, featuring the 100 V EPC2045 enhancement mode (eGaN®) field effect transistor. Learn More

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Featured Products

Image of EPC’s EPC9130 Regulated Converter

EPC9130 Regulated Converter

EPC’s EPC9130 demonstration board features a power density exceeding 1000 W per cubic inch, and over 96% efficiency. Learn More

Image of EPC's GaN® Performance at MOSFET Value

GaN Performance at MOSFET Value

EPC's GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage. Learn More

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Newest Products View All (38)

Image of EPC's EPC2051 100 V eGaN Power Transistor

EPC2051 100 V eGaN® Power Transistor

EPC’s EPC2051 100 V eGaN® power transistor is 30 times smaller than comparable silicon and is capable of 97% efficiency at 500 kHz.

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Image of EPC EPC9129 Wireless Power Kit

EPC9129 Wireless Power Kit

EPC’s 33 W wireless power kit, EPC9129, comes complete with a Class 4 transmitter paired with a regulated Category 5 AirFuel™ Alliance compatible device.

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Image of EPC EPC2202/EPC2203 GaN Chip-Scale AEC-Q101 Qualified FETs

EPC2202/EPC2203 GaN Chip-Scale AEC-Q101 Qualified FETs

EPC’s successful AEC-Q101 qualification means automotive electronics can now take full advantage of eGaN devices.

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Image of EPC's EPC2050 Power Transistor

EPC2050 Power Transistor

EPC's EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2), giving designers high performance in a small size package.

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Image of EPC's EPC2112 and EPC2115 eGaN ICs

EPC2112/EPC2115 eGaN® ICs

EPC's EPC2112/EPC2115 eGaN® ICs combine gate drivers with high-frequency GaN FETs for improved efficiency, reduced size, and lower cost.

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Image of EPC's EPC9205 GaN Power Module

EPC9205 GaN Power Module

EPC's EPC9205 GaN power module is designed for plug-and-play evaluation of the high performance gained with gallium nitride power integrated circuits.

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Product Training Modules View All (10)


eGaN® FET Reliability

Duration: 5 minutes

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

eGaN-based Eighth Brick Converter

eGaN-based Eighth Brick Converter

Duration: 5 minutes

Review of the design specifications of a 500 W 1/8th brick converter


eGaN Integrated GaN Power

Duration: 5 minutes

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.


Driving eGaN FETs with the LM5113

Duration: 15 minutes

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

Featured Videos View All (50)

300 W GaN-Based Wirelessly Powered Smart Desk at CES 2018

A world with no power cords where you have the ability to place whatever you need on a single surface to charge AND power is here today!

Publish Date: 2018-06-29

Why gate drivers are joining eGaN transistors on the same chip

Power transistors made with eGaN technology can switch in a nanosecond or less. The circuit necessary to drive these transistors tend involve a lot of parasitic elements that can contribute to ringing and other sub-optimum effects.

Publish Date: 2018-06-18

How eGaN transistor technology improves lidar performance

EPC's Alex Lidow explains why eGaN excels at powering lidar lasers and why both solid-state and rotating lidar units will have roles in new robotics.

Publish Date: 2018-04-12

Graphics-intensive applications benefit from power-dense eGaN dc/dc converters

As explained by EPC's Alex Lidow, the reference board is super small and hits 1,400 W/cubic inch with a 96% energy efficiency and a BOM cost of just six cents per watt.

Publish Date: 2018-04-12

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