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EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

GaN for LiDAR

Image of EPC's GaN for LiDAR

EPC’s Alex Lidow explains why eGaN FETs and ICs excel at powering LiDAR lasers and why both solid-state and rotating LiDAR units will have roles in autonomous vehicles, robotics, and drones. Learn More

GaN ICs

Image of EPC's eGaN Integrated Circuits Gate Driver plus FET

Power transistors made with eGaN technology can switch in a nanosecond or less. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor simplifies the design and lowers the cost of power electronics. Learn More

48 V – 12 V DC-DC with GaN, More Efficient, Smaller and Lower Cost

Image of EPC's DC/DC Conversion

The EPC9130 development board is a 500 kHz switching frequency, 48 V nominal input voltage, 60 A maximum output current, 5-phase intermediate bus converter (IBC) with onboard microcontroller and gate drives, featuring the 100 V EPC2045 enhancement mode (eGaN®) field effect transistor. Learn More

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Newest Products View All (35)

Image of EPC's EPC2050 Power Transistor

EPC2050 Power Transistor

EPC's EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2), giving designers high performance in a small size package.

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Image of EPC's EPC2112 and EPC2115 eGaN ICs

EPC2112/EPC2115 eGaN® ICs

EPC's EPC2112/EPC2115 eGaN® ICs combine gate drivers with high-frequency GaN FETs for improved efficiency, reduced size, and lower cost.

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Image of EPC's EPC9205 GaN Power Module

EPC9205 GaN Power Module

EPC's EPC9205 GaN power module is designed for plug-and-play evaluation of the high performance gained with gallium nitride power integrated circuits.

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Image of EPC's EPC9204 Evaluation Board for EPC2111

EPC9204 Evaluation Board for EPC2111

EPC's EPC9204 development board provides an eGaN IC based power module, featuring the EPC2111 eGaN® IC (enhancement-mode gallium nitride integrated circuit).

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Image of EPC's EPC9131 Demonstration Board for EPC2112

EPC9131 Demonstration Board for EPC2112

EPC's demonstration board EPC9131 is easy to set up to evaluate the performance of the EPC2112 eGaN® IC and directly driven from the controller IC.

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Image of EPC’s EPC9130 Regulated Converter

EPC9130 Regulated Converter

EPC’s EPC9130 demonstration board features a power density exceeding 1000 W per cubic inch, and over 96% efficiency.

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Product Training Modules View All (10)

917-1027-2-ND

eGaN® FET Reliability

Duration: 5 minutes

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

eGaN-based Eighth Brick Converter

eGaN-based Eighth Brick Converter

Duration: 5 minutes

Review of the design specifications of a 500 W 1/8th brick converter

917-EPC2100ENG-ND

eGaN Integrated GaN Power

Duration: 5 minutes

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.

eGaN FETS

Driving eGaN FETs with the LM5113

Duration: 15 minutes

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

Featured Videos View All (48)

How eGaN transistor technology improves lidar performance

EPC's Alex Lidow explains why eGaN excels at powering lidar lasers and why both solid-state and rotating lidar units will have roles in new robotics.

Graphics-intensive applications benefit from power-dense eGaN dc/dc converters

As explained by EPC's Alex Lidow, the reference board is super small and hits 1,400 W/cubic inch with a 96% energy efficiency and a BOM cost of just six cents per watt.

48 V–12 V DC-DC with GaN, More Efficient, Smaller and Lower Cost

The EPC9130 development board is a 500 kHz switching frequency, 48 V nominal input voltage, 60 A maximum output current, 5-phase intermediate bus converter, featuring the 100 V EPC2045 enhancement mode field effect transistor.

EPC eGaN Transistors – Another Geek Moment

Aaron from Digi-Key Electronics provides a brief overview of transistors focusing in on the EPC2045 eGaN series from EPC. http://dky.bz/2xcLgnK

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