JFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2SK2145-Y(TE85L,F) JFET 2N-CH SMV Toshiba Semiconductor and Storage	17,695 In Stock	1 : $1.03000 Cut Tape (CT) 3,000 : $0.25531 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	2 N-Channel (Dual)	-	-	1.2 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	300 mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
2SK2145-BL(TE85L,F JFET 2N-CH SMV Toshiba Semiconductor and Storage	17,640 In Stock	1 : $1.03000 Cut Tape (CT) 3,000 : $0.25531 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	2 N-Channel (Dual)	-	-	6 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	300 mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
2SK2145-GR(TE85L,F JFET 2N-CH SMV Toshiba Semiconductor and Storage	2,141 In Stock	1 : $1.03000 Cut Tape (CT) 3,000 : $0.21625 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	2 N-Channel (Dual)	-	-	2.6 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	300 mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
JFE150DBVT PROTOTYPE Texas Instruments	175 In Stock	1 : $2.50000 Bulk	-	Bulk	Active	N-Channel	40 V	40 V	24 mA @ 10 V	50 mA	1.5 V @ 100 nA	24pF @ 5V	-	-55°C ~ 150°C (TJ)	Surface Mount	SC-74A, SOT-753	SOT-23-5
JFE150DBVR PROTOTYPE Texas Instruments	0 In Stock Check Lead Time	1 : $2.08000 Bulk	-	Bulk	Active	N-Channel	40 V	40 V	24 mA @ 10 V	50 mA	1.5 V @ 100 nA	24pF @ 5V	-	-55°C ~ 150°C (TJ)	Surface Mount	SC-74A, SOT-753	SOT-23-5

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JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.