Single IGBTs

Results: 2
Switching Energy
1.68mJ (on), 1.11mJ (off)1.86mJ (on), 1.13mJ (off)
Gate Charge
136 nC139 nC
Td (on/off) @ 25°C
24ns/107.2ns25ns/106ns
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-247-3
AFGHL75T65SQDC
IGBT TRENCH FS 650V 80A TO247-3
onsemi
405
In Stock
3,600
Factory
1 : $7.34000
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Trench Field Stop
650 V
80 A
300 A
2.1V @ 15V, 75A
375 W
1.68mJ (on), 1.11mJ (off)
Standard
139 nC
24ns/107.2ns
400V, 75A, 4.7Ohm, 15V
-
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-247-3
AFGHL75T65SQD
650V75A FS4 IGBT TO-247LL
onsemi
0
In Stock
1,730
Factory
Check Lead Time
1 : $6.57000
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-
Tube
Active
Trench Field Stop
650 V
80 A
300 A
2.1V @ 15V, 75A
375 W
1.86mJ (on), 1.13mJ (off)
Standard
136 nC
25ns/106ns
400V, 75A, 4.7Ohm, 15V
36 ns
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
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Single IGBTs


Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.