Single IGBTs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IXEL40N400 IGBT 4000V 90A ISOPLUSI5-PAK IXYS	156 In Stock	1 : $119.63000 Tube	-	-	Tube	Active	-	4000 V	90 A	400 A	3.2V @ 15V, 40A	380 W	55mJ (on), 165mJ (off)	Standard	275 nC	160ns/630ns	2800V, 40A, 33Ohm, 15V	-	-40°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-PAK™	ISOPLUSi5-Pak™
IXYK140N120A4 IGBT PT 1200V 480A TO-264 IXYS	216 In Stock 350 Factory	1 : $43.98000 Tube	-	XPT™, GenX4™	Tube	Active	PT	1200 V	480 A	1200 A	1.7V @ 15V, 140A	1500 W	4.9mJ (on), 12mJ (off)	Standard	420 nC	52ns/590ns	600V, 70A, 1.5Ohm, 15V	47 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXYK)
IXBH32N300 IGBT 3000V 80A TO-247AD IXYS	254 In Stock	1 : $71.11000 Tube	-	BIMOSFET™	Tube	Active	-	3000 V	80 A	280 A	3.2V @ 15V, 32A	400 W	-	Standard	142 nC	-	-	1.5 µs	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IXGH32N170 IGBT NPT 1700V 75A TO-247AD IXYS	42 In Stock	1 : $23.13000 Tube	-	-	Tube	Active	NPT	1700 V	75 A	200 A	3.3V @ 15V, 32A	350 W	11mJ (off)	Standard	155 nC	45ns/270ns	1020V, 32A, 2.7Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD

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Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.