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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
STP22NM60N
MOSFET N-CH 600V 16A TO220AB
STMicroelectronics
962
In Stock
1 : $4.02000
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ActiveN-ChannelMOSFET (Metal Oxide)600 V16A (Tc)10V220mOhm @ 8A, 10V4V @ 100µA44 nC @ 10 V±30V1300 pF @ 50 V-125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
TO-220-3
NTP165N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
onsemi
543
In Stock
1 : $4.48000
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Not For New DesignsN-ChannelMOSFET (Metal Oxide)650 V19A (Tc)10V165mOhm @ 9.5A, 10V4V @ 1.6mA35 nC @ 10 V±30V1808 pF @ 400 V-142W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
3,910
In Stock
1 : $7.49000
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ActiveN-ChannelMOSFET (Metal Oxide)600 V18A (Tc)10V190mOhm @ 6A, 10V4V @ 250µA31 nC @ 10 V±30V1273 pF @ 100 V-33.8W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
650V/ 390MOHM / 10A/ EASY TO DRI
PJMP210N65EC_T0_00601
650V/ 390MOHM / 10A/ EASY TO DRI
Panjit International Inc.
1,981
In Stock
1 : $2.27000
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ActiveN-ChannelMOSFET (Metal Oxide)700 V19A (Tc)10V210mOhm @ 9.5A, 10V4V @ 250µA34 nC @ 10 V±30V1412 pF @ 400 V-150W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220AB-LTO-220-3
181
In Stock
1 : $3.26000
Tube
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ActiveN-ChannelMOSFET (Metal Oxide)650 V18A (Ta)10V155mOhm @ 9A, 10V4V @ 730µA29 nC @ 10 V±30V1635 pF @ 300 V-150W (Tc)150°CThrough HoleTO-220TO-220-3
N-CHANNEL 650 V, 128 MOHM TYP.,
STP65N150M9
N-CHANNEL 650 V, 128 MOHM TYP.,
STMicroelectronics
476
In Stock
1 : $4.03000
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ActiveN-ChannelMOSFET (Metal Oxide)650 V20A (Tc)10V150mOhm @ 10A, 10V4.2V @ 250µA32 nC @ 10 V±30V1239 pF @ 400 V-140W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
TO-220-3
FCP22N60N
MOSFET N-CH 600V 22A TO220-3
onsemi
638
In Stock
1 : $4.67000
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ObsoleteN-ChannelMOSFET (Metal Oxide)600 V22A (Tc)10V165mOhm @ 11A, 10V4V @ 250µA45 nC @ 10 V±45V1950 pF @ 100 V-205W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
166
In Stock
1 : $2.78000
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ActiveN-ChannelMOSFET (Metal Oxide)650 V15A (Ta)10V190mOhm @ 7.5A, 10V4V @ 610µA25 nC @ 10 V±30V1370 pF @ 300 V-130W (Tc)150°CThrough HoleTO-220TO-220-3
6
In Stock
1 : $4.01000
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Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V160mOhm @ 13.5A, 10V4V @ 250µA26 nC @ 10 V±30V1294 pF @ 100 V-357W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
N-CHANNEL 800 V, 197 MOHM TYP.,
STP80N240K6
N-CHANNEL 800 V, 197 MOHM TYP.,
STMicroelectronics
8
In Stock
1 : $5.99000
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ActiveN-ChannelMOSFET (Metal Oxide)800 V16A (Tc)10V220mOhm @ 7A, 10V4V @ 100µA25.9 nC @ 10 V±30V1350 pF @ 100 V-140W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
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N-Channel TO-220-3 Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.