SiCFET (Silicon Carbide) Single FETs, MOSFETs

Results: 928
Manufacturer
Alpha & Omega Semiconductor Inc.Analog Power Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDCoolCADDiodes IncorporatedDiotec SemiconductorfastSiCGeneSiC SemiconductorGoford SemiconductorInfineon TechnologiesInventchipIXYS
Series
-1200448C2M™C3M™EE SeriesE-SeriesFalconG2R™G2R™, LoRing™G3R™
Packaging
BoxBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Drain to Source Voltage (Vdss)
400 V650 V700 V750 V900 V1000 V1200 V1.2 kV1700 V2000 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A3A (Tc)3.7A (Tc)4A4A (Tc)4.2A (Tc)4.3A (Tc)4.5A (Tc)4.6A (Tc)4.7A (Tc)4.9A (Tc)5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 18V2.8V10V12V12V, 15V15V15V, 18V15V, 20V16V, 20V18V18V, 20V20V-
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V7.7mOhm @ 89.9A, 18V8.5mOhm @ 146.3A, 18V9.9mOhm @ 108A, 18V10.6mOhm @ 90.3A, 18V11.3mOhm @ 93A, 20V12.2mOhm @ 56.7A, 18V13mOhm @ 100A, 18V13.2mOhm @ 64.2A, 20V14.2mOhm @ 60A, 12V14.4mOhm @ 37.1A, 18V15mOhm @ 41.5A, 20A
Vgs(th) (Max) @ Id
1.5V @ 14mA1.5V @ 4mA1.5V @ 4mA (Typ)1.6V @ 4mA1.6V @ 4mA (Typ)2V @ 250µA2V @ 6mA2V @ 8mA2.2V @ 14mA2.2V @ 20mA (Typ)2.2V @ 2mA (Typ)2.2V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 12 V5.3 nC @ 18 V5.5 nC @ 12 V5.9 nC @ 18 V6 nC @ 18 V7.9 nC @ 18 V8 nC @ 12 V8.1 nC @ 12 V8.5 nC @ 18 V9.4 nC @ 18 V9.5 nC @ 15 V9.7 nC @ 18 V
Vgs (Max)
-10V, +20V-8V, +19V4.2V @ 1mA+15V, -4V+15V, -5V±15V15V15V, 12V+18V, -15V+18V, -3V+18V, -4V+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V124 pF @ 1000 V133 pF @ 1000 V139 pF @ 1000 V142 pF @ 1000 V150 pF @ 600 V150 pF @ 1000 V170 pF @ 800 V182 pF @ 800 V184 pF @ 800 V184 pF @ 1000 V184 pF @ 1360 V
FET Feature
-Current SensingDepletion Mode
Power Dissipation (Max)
313mW (Tj)3.7W (Ta), 468W (Tc)3.7W (Ta), 477W (Tc)3.8W (Ta), 150W (Tc)3.8W (Ta), 167W (Tc)3.8W (Ta), 214W (Tc)3.8W (Ta), 341W (Tc)3.8W (Ta), 429W (Tc)26W29W (Tc)32W35W
Operating Temperature
-60°C ~ 175°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
-Chassis MountSurface MountThrough Hole
Supplier Device Package
4-PDFN (8x8)4-TDFN (8x8)8-DFN (5.2x5.86)8-HPSOF8-PQFN (5x6), Power56-D2PAK (7-Lead)D2PAK-7D2PAK-7LD3D3PAKDFN8*8
Package / Case
4-PowerTSFN8-PowerSFN8-PowerTDFN8-PowerVDFN9-PowerTDFN22-PowerBSOP Module-D-3 ModuleDFN8*8DieModuleSOT-227-4, miniBLOC
Stocking Options
Environmental Options
Media
Marketplace Product
928Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
1,619
In Stock
1 : $4.29000
Cut Tape (CT)
1,000 : $1.94802
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
+20V, -10V
275 pF @ 1000 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,891
In Stock
1 : $4.84000
Cut Tape (CT)
1,000 : $2.27712
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1,514
In Stock
1 : $5.21000
Cut Tape (CT)
1,000 : $2.40952
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
+18V, -15V
196 pF @ 800 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
7,531
In Stock
1 : $5.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7
IMBF170R450M1XTMA1
SICFET N-CH 1700V 9.8A TO263-7
Infineon Technologies
474
In Stock
1 : $5.79000
Cut Tape (CT)
1,000 : $2.86325
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9.8A (Tc)
12V, 15V
450mOhm @ 2A, 15V
5.7V @ 2.5mA
11 nC @ 12 V
+20V, -10V
610 pF @ 1000 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
998
In Stock
1 : $6.42000
Cut Tape (CT)
1,000 : $3.14850
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
3,097
In Stock
1 : $6.52000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
Rohm Semiconductor
5,490
In Stock
1 : $6.89000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
SCT2xxxNYTB
SCT2750NYTB
SICFET N-CH 1700V 5.9A TO268
Rohm Semiconductor
1,188
In Stock
1 : $6.97000
Cut Tape (CT)
400 : $3.49500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.9A (Tc)
18V
975mOhm @ 1.7A, 18V
4V @ 630µA
17 nC @ 18 V
+22V, -6V
275 pF @ 800 V
-
57W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,561
In Stock
1 : $7.21000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
2,293
In Stock
1 : $7.52000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0280090J-TR
C3M0280090J-TR
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
7,917
In Stock
1 : $7.92000
Cut Tape (CT)
800 : $4.11250
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
+18V, -8V
150 pF @ 600 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,504
In Stock
1 : $8.04000
Cut Tape (CT)
800 : $6.08003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
8A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
+15V, -5V
454 pF @ 1000 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C2M0280120D
SICFET N-CH 1200V 10A TO247-3
Wolfspeed, Inc.
14,250
In Stock
1 : $8.20000
Tube
Tube
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
20V
370mOhm @ 6A, 20V
2.8V @ 1.25mA (Typ)
20.4 nC @ 20 V
+25V, -10V
259 pF @ 1000 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4
NTH4L160N120SC1
SICFET N-CH 1200V 17.3A TO247
onsemi
900
In Stock
2,700
Factory
1 : $8.38000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17.3A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
34 nC @ 20 V
+25V, -15V
665 pF @ 800 V
-
111W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
IPW65R099CFD7AXKSA1
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
1,017
In Stock
1 : $8.92000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
2,874
In Stock
1 : $9.60000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2,756
In Stock
1 : $10.50000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D2PAK-7
NVBG160N120SC1
SICFET N-CH 1200V 19.5A D2PAK
onsemi
618
In Stock
1 : $10.60000
Cut Tape (CT)
800 : $5.94825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19.5A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
33.8 nC @ 20 V
+25V, -15V
678 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
417
In Stock
1 : $10.77000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
GA20JT12-263
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,571
In Stock
1 : $11.03000
Cut Tape (CT)
800 : $8.34001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
+22V, -10V
1545 pF @ 800 V
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065090J
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
Wolfspeed, Inc.
877
In Stock
1 : $11.07000
Bulk
Bulk
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
132
In Stock
1 : $11.31000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
54.4mOhm @ 19.3A, 18V
5.2V @ 10mA
51 nC @ 18 V
+20V, -5V
1620 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
219
In Stock
1 : $12.24000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0120090D
SICFET N-CH 900V 23A TO247-3
Wolfspeed, Inc.
818
In Stock
1 : $12.37000
Tube
Tube
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
23A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3 nC @ 15 V
+18V, -8V
414 pF @ 600 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
Showing
of 928

SiCFET (Silicon Carbide) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.