7A (Ta), 20A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDMC86102 MOSFET N-CH 100V 7A/20A POWER33 onsemi	3,490 In Stock	1 : $2.38000 Cut Tape (CT) 3,000 : $0.90700 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7A (Ta), 20A (Tc)	6V, 10V	24mOhm @ 7A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	965 pF @ 50 V	-	2.3W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDMC86324 MOSFET N-CH 80V 7A/20A POWER33 onsemi	3,555 In Stock 6,000 Factory	1 : $1.73000 Cut Tape (CT) 3,000 : $0.59950 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	7A (Ta), 20A (Tc)	6V, 10V	23mOhm @ 7A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	965 pF @ 50 V	-	2.3W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
RQ3L070BGTB1 NCH 60V 20A, HSMT8G, POWER MOSFE Rohm Semiconductor	1,168 In Stock	1 : $1.52000 Cut Tape (CT) 3,000 : $0.41793 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7A (Ta), 20A (Tc)	4.5V, 10V	24.7mOhm @ 7A, 10V	2.5V @ 1mA	7.6 nC @ 10 V	±20V	460 pF @ 30 V	-	2W (Ta), 15W (Tc)	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN

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7A (Ta), 20A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.