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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF1407PBF MOSFET N-CH 75V 130A TO220AB Infineon Technologies	11,606 In Stock	1 : $2.94000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	75 V	130A (Tc)	10V	7.8mOhm @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	5600 pF @ 25 V	-	330W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZXMP3F30FHTA MOSFET P-CH 30V 2.8A SOT23 Diodes Incorporated	2,790 In Stock	1 : $0.44000 Cut Tape (CT) 3,000 : $0.14860 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2.8A (Ta)	4.5V, 10V	80mOhm @ 2.5A, 10V	1V @ 250µA	7 nC @ 10 V	±20V	370 pF @ 15 V	-	950mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.