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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IMBG120R090M1HXTMA1 SICFET N-CH 1.2KV 26A TO263 Infineon Technologies	2,535 In Stock	1 : $9.87000 Cut Tape (CT) 1,000 : $4.48684 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	-	125mOhm @ 8.5A, 18V	5.7V @ 3.7mA	23 nC @ 18 V	+18V, -15V	763 pF @ 800 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NSF040120L4A0Q NSF040120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	432 In Stock	1 : $19.41000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tj)	15V, 18V	60mOhm @ 40A, 15V	2.9V @ 4mA	95 nC @ 15 V	+22V, -10V	2600 pF @ 800 V	-	306W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247	TO-247-4

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.