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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

TP65H015G5WS 650 V 95 A GAN FET Transphorm	110 In Stock	1 : $32.26000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	93A (Tc)	10V	18mOhm @ 60A, 10V	4.8V @ 2mA	100 nC @ 10 V	±20V	5218 pF @ 400 V	-	266W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H150G4PS GAN FET N-CH 650V TO-220 Transphorm	2,881 In Stock	1 : $7.99000 Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	16A (Tc)	10V	180mOhm @ 8.5A, 10V	4.8V @ 500µA	8 nC @ 10 V	±20V	598 pF @ 400 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H035WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	294 In Stock	1 : $15.40000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	12V	41mOhm @ 30A, 10V	4.8V @ 1mA	36 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H035G4WSQA 650 V 46.5 GAN FET Transphorm	228 In Stock	1 : $20.05000 Tube	-	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	47.2A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP65H070LDG-TR 650 V 25 A GAN FET Transphorm	1,604 In Stock	1 : $14.40000 Cut Tape (CT) 500 : $7.39350 Tape & Reel (TR)	TP65H070L	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	25A (Tc)	10V	85mOhm @ 16A, 10V	4.8V @ 700µA	9.3 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerDFN
TP65H035WSQA GANFET N-CH 650V 47.2A TO247-3 Transphorm	540 In Stock	1 : $23.14000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	47.2A (Tc)	10V	41mOhm @ 32A, 10V	4.5V @ 1mA	24 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP65H300G4JSGB-TR GANFET N-CH 650V 9.2A QFN5X6 Transphorm	3,909 In Stock	1 : $4.30000 Cut Tape (CT) 4,000 : $1.50000 Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	9.2A (Tc)	6V	312mOhm @ 6.5A, 6V	2.8V @ 500µA	3.5 nC @ 10 V	±10V	400 pF @ 400 V	-	41.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
CGD65B200S2-T13 650V GAN HEMT, 200MOHM, DFN5X6. Cambridge GaN Devices	4,204 In Stock	1 : $5.57000 Cut Tape (CT) 5,000 : $2.12500 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	GaNFET (Gallium Nitride)	650 V	8.5A (Tc)	9V, 20V	280mOhm @ 600mA, 12V	4.2V @ 2.75mA	1.4 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerVDFN
TP65H050G4WS 650 V 34 A GAN FET Transphorm	85 In Stock	1 : $15.91000 Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H050WSQA GANFET N-CH 650V 36A TO247-3 Transphorm	21 In Stock	1 : $19.78000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	36A (Tc)	10V	60mOhm @ 25A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.