Single

Results: 11

Filters

Stacked

Scrolling

Showing

of 11

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138LT1G MOSFET N-CH 50V 200MA SOT23-3 onsemi	349,856 In Stock	1 : $0.29000 Cut Tape (CT) 3,000 : $0.05980 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	5V	3.5Ohm @ 200mA, 5V	1.5V @ 1mA	±20V	50 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
VN2222LL-G MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	5,902 In Stock	1 : $0.54000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 1mA	±30V	60 pF @ 25 V	-	400mW (Ta), 1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000 MOSFET TO92 N 60V 0.2A 5OHM 150C onsemi	24,182 In Stock	1 : $0.61000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
ZVN4424A MOSFET N-CH 240V 260MA TO92-3 Diodes Incorporated	5,225 In Stock	1 : $1.09000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	240 V	260mA (Ta)	2.5V, 10V	5.5Ohm @ 500mA, 10V	1.8V @ 1mA	±40V	200 pF @ 25 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G MOSFET N-CH 500V 30MA TO92-3 Microchip Technology	3,388 In Stock	1 : $0.60000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30mA (Tj)	0V	1000Ohm @ 500µA, 0V	-	±20V	10 pF @ 25 V	Depletion Mode	740mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS107P MOSFET N-CH 200V 120MA TO92-3 Diodes Incorporated	4,628 In Stock	1 : $0.61000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	120mA (Ta)	2.6V, 5V	30Ohm @ 100mA, 5V	-	±20V	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
TN0606N3-G MOSFET N-CH 60V 500MA TO92-3 Microchip Technology	691 In Stock	1 : $1.06000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Tj)	3V, 10V	1.5Ohm @ 750mA, 10V	2V @ 1mA	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
ZVP4424A MOSFET P-CH 240V 200MA TO92-3 Diodes Incorporated	3,979 In Stock 12,000 Factory	1 : $1.13000 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	240 V	200mA (Ta)	3.5V, 10V	9Ohm @ 200mA, 10V	2V @ 1mA	±40V	200 pF @ 25 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
TN0702N3-G MOSFET N-CH 20V 530MA TO92-3 Microchip Technology	1,934 In Stock	1 : $1.52000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	20 V	530mA (Tj)	2V, 5V	1.3Ohm @ 500mA, 5V	1V @ 1mA	±20V	200 pF @ 20 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0620N3-G MOSFET N-CH 200V 250MA TO92-3 Microchip Technology	417 In Stock	1 : $1.63000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	200 V	250mA (Tj)	5V, 10V	6Ohm @ 500mA, 10V	1.6V @ 1mA	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0620N3-G-P002 MOSFET N-CH 200V 250MA TO92-3 Microchip Technology	6,324 In Stock	1 : $1.73000 Cut Tape (CT) 2,000 : $1.32000 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	250mA (Tj)	5V, 10V	6Ohm @ 500mA, 10V	1.6V @ 1mA	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)

Showing

of 11

Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.