Single

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™-5TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 100A, 10V7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V216 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
3595 pF @ 15 V16011 pF @ 50 V
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HSOF-8-1PowerPAK® 1212-8
Package / Case
8-PowerSFNPowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2,081
In Stock
1 : $6.27000
Cut Tape (CT)
2,000 : $2.59263
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 275µA
216 nC @ 10 V
±20V
16011 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
PowerPAK 1212-8
SI7101DN-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8
Vishay Siliconix
12,240
In Stock
1 : $1.20000
Cut Tape (CT)
3,000 : $0.49631
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
7.2mOhm @ 15A, 10V
2.5V @ 250µA
102 nC @ 10 V
±25V
3595 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
Showing
of 2

Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.