Toshiba Semiconductor and Storage Single FETs, MOSFETs

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of 1,113

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
T2N7002AK,LM MOSFET N-CH 60V 200MA SOT23 Toshiba Semiconductor and Storage	159,763 In Stock	1 : $0.14000 Cut Tape (CT) 3,000 : $0.02609 Tape & Reel (TR)	-	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 4.5 V	±20V	17 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSM3K15AMFV,L3F MOSFET N-CH 30V 100MA VESM Toshiba Semiconductor and Storage	157,970 In Stock	1 : $0.23000 Cut Tape (CT) 8,000 : $0.03963 Tape & Reel (TR)	-	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	3.6Ohm @ 10mA, 4V	1.5V @ 100µA	-	±20V	13.5 pF @ 3 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VESM	SOT-723
SSM3K35CTC,L3F MOSFET N-CH 20V 250MA CST3C Toshiba Semiconductor and Storage	10,032 In Stock	1 : $0.25000 Cut Tape (CT) 10,000 : $0.04124 Tape & Reel (TR)	-	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	250mA (Ta)	1.2V, 4.5V	1.1Ohm @ 150mA, 4.5V	1V @ 100µA	0.34 nC @ 4.5 V	±10V	36 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	CST3C	SC-101, SOT-883
SSM3K56FS,LF MOSFET N-CH 20V 800MA SSM Toshiba Semiconductor and Storage	4,102,252 In Stock	1 : $0.32000 Cut Tape (CT) 3,000 : $0.05776 Tape & Reel (TR)	-	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	SSM	SC-75, SOT-416
SSM3J372R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	32,197 In Stock	1 : $0.36000 Cut Tape (CT) 3,000 : $0.07525 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	+12V, -6V	560 pF @ 15 V	-	1W (Ta)	150°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K339R,LF MOSFET N-CH 40V 2A SOT-23F Toshiba Semiconductor and Storage	147,271 In Stock	1 : $0.37000 Cut Tape (CT) 3,000 : $0.07678 Tape & Reel (TR)	-	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	2A (Ta)	1.8V, 8V	185mOhm @ 1A, 8V	1.2V @ 1mA	1.1 nC @ 4.2 V	±12V	130 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J56MFV,L3F MOSFET P-CH 20V 800MA VESM Toshiba Semiconductor and Storage	59,846 In Stock	1 : $0.37000 Cut Tape (CT) 8,000 : $0.06664 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.2V, 4.5V	390mOhm @ 800mA, 4.5V	-	-	±8V	100 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VESM	SOT-723
SSM3J332R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	34,207 In Stock	1 : $0.37000 Cut Tape (CT) 3,000 : $0.07678 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	±12V	560 pF @ 15 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K56ACT,L3F MOSFET N-CH 20V 1.4A CST3 Toshiba Semiconductor and Storage	78,475 In Stock	1 : $0.38000 Cut Tape (CT) 10,000 : $0.06730 Tape & Reel (TR)	-	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.4A (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	CST3	SC-101, SOT-883
SSM3J328R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	143,403 In Stock	1 : $0.42000 Cut Tape (CT) 3,000 : $0.08881 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J356R,LF MOSFET P-CH 60V 2A SOT-23F Toshiba Semiconductor and Storage	66,165 In Stock	1 : $0.42000 Cut Tape (CT) 3,000 : $0.08881 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	8.3 nC @ 10 V	+10V, -20V	330 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J338R,LF MOSFET P-CH 12V 6A SOT23F Toshiba Semiconductor and Storage	86,984 In Stock	1 : $0.50000 Cut Tape (CT) 3,000 : $0.10626 Tape & Reel (TR)	-	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Ta)	1.8V, 8V	17.6mOhm @ 6A, 8V	1V @ 1mA	19.5 nC @ 4.5 V	±10V	1400 pF @ 6 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM6H19NU,LF MOSFET N-CH 40V 2A 6UDFN Toshiba Semiconductor and Storage	14,900 In Stock	1 : $0.50000 Cut Tape (CT) 3,000 : $0.10769 Tape & Reel (TR)	-	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	2A (Ta)	1.8V, 8V	185mOhm @ 1A, 8V	1.2V @ 1mA	2.2 nC @ 4.2 V	±12V	130 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
SSM3J117TU,LF MOSFET P-CHANNEL 30V 2A UFM Toshiba Semiconductor and Storage	9,257 In Stock	1 : $0.50000 Cut Tape (CT) 3,000 : $0.10769 Tape & Reel (TR)	-	U-MOSII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	117mOhm @ 1A, 10V	2.6V @ 1mA	-	±20V	280 pF @ 15 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM3J133TU,LF MOSFET P-CH 20V 5.5A UFM Toshiba Semiconductor and Storage	33,463 In Stock	1 : $0.58000 Cut Tape (CT) 3,000 : $0.12730 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM6J501NU,LF MOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage	24,834 In Stock	1 : $0.61000 Cut Tape (CT) 3,000 : $0.13553 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.5V, 4.5V	15.3mOhm @ 4A, 4.5V	1V @ 1mA	29.9 nC @ 4.5 V	±8V	2600 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM6J511NU,LF MOSFET P-CH 12V 14A 6UDFNB Toshiba Semiconductor and Storage	47,049 In Stock	1 : $0.62000 Cut Tape (CT) 3,000 : $0.13690 Tape & Reel (TR)	-	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	14A (Ta)	-	9.1mOhm @ 4A, 8V	1V @ 1mA	47 nC @ 4.5 V	-	3350 pF @ 6 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	17,164 In Stock	1 : $0.69000 Cut Tape (CT) 3,000 : $0.15439 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.8W (Ta)	175°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM3K341R,LF MOSFET N-CH 60V 6A SOT-23F Toshiba Semiconductor and Storage	195,269 In Stock	1 : $0.70000 Cut Tape (CT) 3,000 : $0.15705 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM6K361NU,LF MOSFET N-CH 100V 3.5A 6UDFNB Toshiba Semiconductor and Storage	2,294 In Stock	1 : $0.70000 Cut Tape (CT) 3,000 : $0.15705 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	±20V	430 pF @ 15 V	-	1.25W (Ta)	150°C	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K2615R,LF MOSFET N-CH 60V 2A SOT23F Toshiba Semiconductor and Storage	25,417 In Stock	1 : $0.71000 Cut Tape (CT) 3,000 : $0.16103 Tape & Reel (TR)	-	π-MOSV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	3.3V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	-	±20V	150 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM6K341NU,LF MOSFET N-CH 60V 6A 6UDFNB Toshiba Semiconductor and Storage	13,704 In Stock	1 : $0.71000 Cut Tape (CT) 3,000 : $0.16103 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	2.5W (Ta)	150°C	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM6K513NU,LF MOSFET N-CH 30V 15A 6UDFNB Toshiba Semiconductor and Storage	1,138 In Stock	1 : $0.71000 Cut Tape (CT) 3,000 : $0.16103 Tape & Reel (TR)	-	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	15A (Ta)	4.5V, 10V	8.9mOhm @ 4A, 10V	2.1V @ 100µA	7.5 nC @ 4.5 V	±20V	1130 pF @ 15 V	-	1.25W (Ta)	150°C (TA)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K361R,LF MOSFET N-CH 100V 3.5A SOT-23F Toshiba Semiconductor and Storage	17,167 In Stock	1 : $0.76000 Cut Tape (CT) 3,000 : $0.17415 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	±20V	430 pF @ 15 V	-	1.2W (Ta)	175°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J351R,LXHF AECQ MOSFET PCH -60V -3.5A SOT23 Toshiba Semiconductor and Storage	30,795 In Stock	1 : $0.92000 Cut Tape (CT) 3,000 : $0.21511 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.5A (Ta)	4V, 10V	134mOhm @ 1A, 10V	2V @ 1mA	15.1 nC @ 10 V	+10V, -20V	660 pF @ 10 V	-	1W (Ta)	150°C	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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