TO-220-3 Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRF9Z34NPBF MOSFET P-CH 55V 19A TO220AB Infineon Technologies	43,435 In Stock	1 : $1.35000 Tube	-	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF530NPBF MOSFET N-CH 100V 17A TO220AB Infineon Technologies	14,004 In Stock	1 : $1.39000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFZ44NPBF MOSFET N-CH 55V 49A TO220AB Infineon Technologies	25,489 In Stock	1 : $1.41000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFB7545PBF MOSFET N-CH 60V 95A TO220 Infineon Technologies	16,869 In Stock	1 : $1.46000 Tube	-	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	95A (Tc)	6V, 10V	5.9mOhm @ 57A, 10V	3.7V @ 100µA	110 nC @ 10 V	±20V	4010 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IRF9530NPBF MOSFET P-CH 100V 14A TO220AB Infineon Technologies	21,916 In Stock	1 : $1.47000 Tube	-	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRLZ34NPBF MOSFET N-CH 55V 30A TO220AB Infineon Technologies	18,661 In Stock	1 : $1.56000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	30A (Tc)	4V, 10V	35mOhm @ 16A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	880 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF540ZPBF MOSFET N-CH 100V 36A TO220AB Infineon Technologies	43,639 In Stock	1 : $1.69000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	36A (Tc)	10V	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1770 pF @ 25 V	-	92W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF640NPBF MOSFET N-CH 200V 18A TO220AB Infineon Technologies	27,960 In Stock	1 : $1.74000 Tube	-	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	26,194 In Stock	1 : $1.75000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF530PBF MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	13,659 In Stock	1 : $1.76000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	15,614 In Stock	1 : $1.78000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRL540NPBF MOSFET N-CH 100V 36A TO220AB Infineon Technologies	18,254 In Stock	1 : $1.81000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	36A (Tc)	4V, 10V	44mOhm @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	1800 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
STP17NF25 MOSFET N-CH 250V 17A TO220AB STMicroelectronics	7,033 In Stock	1 : $1.88000 Tube	-	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	17A (Tc)	10V	165mOhm @ 8.5A, 10V	4V @ 250µA	29.5 nC @ 10 V	±20V	1000 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IRF9540NPBF MOSFET P-CH 100V 23A TO220AB Infineon Technologies	12,198 In Stock	1 : $1.94000 Tube	-	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF5305PBF MOSFET P-CH 55V 31A TO220AB Infineon Technologies	21,813 In Stock	1 : $1.95000 Tube	-	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 155°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	20,552 In Stock	1 : $2.03000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF3205PBF MOSFET N-CH 55V 110A TO220AB Infineon Technologies	14,223 In Stock	1 : $2.14000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	3247 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
STP55NF06 MOSFET N-CH 60V 50A TO220AB STMicroelectronics	28,614 In Stock	1 : $2.16000 Tube	-	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	18mOhm @ 27.5A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1300 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
FQP17P10 MOSFET P-CH 100V 16.5A TO220-3 onsemi	5,529 In Stock	1 : $2.27000 Tube	-	QFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	16.5A (Tc)	10V	190mOhm @ 8.25A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
MTP3055VL MOSFET N-CH 60V 12A TO220-3 onsemi	2,869 In Stock 5,600 Factory	1 : $2.28000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	12A (Tc)	5V	180mOhm @ 6A, 5V	2V @ 250µA	10 nC @ 5 V	±15V	570 pF @ 25 V	-	48W (Tc)	-65°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
CSD18533KCS MOSFET N-CH 60V 72A/100A TO220-3 Texas Instruments	13,680 In Stock	1 : $2.30000 Tube	-	NexFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	72A (Ta), 100A (Tc)	4.5V, 10V	6.3mOhm @ 75A, 10V	2.3V @ 250µA	34 nC @ 10 V	±20V	3025 pF @ 30 V	-	192W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IRLB3813PBF MOSFET N-CH 30V 260A TO220AB Infineon Technologies	10,603 In Stock	1 : $2.31000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	260A (Tc)	4.5V, 10V	1.95mOhm @ 60A, 10V	2.35V @ 150µA	86 nC @ 4.5 V	±20V	8420 pF @ 15 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFB4227PBF MOSFET N-CH 200V 65A TO220AB Infineon Technologies	1,951 In Stock	1 : $2.51000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	65A (Tc)	10V	24mOhm @ 46A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	4600 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF740PBF MOSFET N-CH 400V 10A TO220AB Vishay Siliconix	5,899 In Stock	1 : $2.53000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1400 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF3415PBF MOSFET N-CH 150V 43A TO220AB Infineon Technologies	3,488 In Stock	1 : $2.69000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	43A (Tc)	10V	42mOhm @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	2400 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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