TO-206AF, TO-72-4 Metal Can Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SK3991 MOSFET 2N-CH 25V 0.03A TO72 Harris Corporation	986 Marketplace	48 : $6.28000 Bulk	-	-	Bulk	Active	-	MOSFET (Metal Oxide)	-	30mA	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
SD213DE TO-72 4L HIGH SPEED N-CHANNEL LATERAL DMO Linear Integrated Systems, Inc.	456 In Stock	1 : $8.41000 Bulk	-	SD213	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10 V	50mA (Ta)	5V, 25V	45Ohm @ 1mA, 10V	1.5V @ 1µA	+25V, -15V	-	-	300mW (Ta)	-55°C ~ 125°C (TJ)	-	-	Through Hole	TO-72-4	TO-206AF, TO-72-4 Metal Can
SD214DE TO-72 4L HIGH SPEED N-CHANNEL LATERAL DMO Linear Integrated Systems, Inc.	463 In Stock	1 : $8.60000 Bulk	-	SD214DE	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20 V	50mA (Ta)	5V, 25V	45Ohm @ 1mA, 10V	1.5V @ 1µA	±40V	-	-	300mW (Ta)	-55°C ~ 125°C (TJ)	-	-	Through Hole	TO-72-4	TO-206AF, TO-72-4 Metal Can
SD211DE TO-72 4L ROHS HIGH SPEED N-CHANNEL LATERAL DMO Linear Integrated Systems, Inc.	274 In Stock	1 : $8.60000 Bulk	-	SD211	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	50mA (Ta)	5V, 25V	45Ohm @ 1mA, 10V	1.5V @ 1µA	+25V, -300mV	-	-	300mW (Ta)	-55°C ~ 125°C (TJ)	-	-	Through Hole	TO-72-4	TO-206AF, TO-72-4 Metal Can
SD210DE TO-72 4L ROHS HIGH SPEED N-CHANNEL LATERAL DMO Linear Integrated Systems, Inc.	289 In Stock	1 : $8.97000 Bulk	-	SD210DE	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	50mA (Ta)	5V, 25V	45Ohm @ 1mA, 10V	1.5V @ 1µA	±40V	-	-	300mW (Ta)	-55°C ~ 125°C (TJ)	-	-	Through Hole	TO-72-4	TO-206AF, TO-72-4 Metal Can
SD215DE TO-72 4L HIGH SPEED N-CHANNEL LATERAL DMO Linear Integrated Systems, Inc.	248 In Stock	1 : $8.97000 Bulk	-	SD215	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20 V	50mA (Ta)	5V, 25V	45Ohm @ 1mA, 10V	1.5V @ 1µA	+30V, -25V	-	-	300mW (Ta)	-55°C ~ 125°C (TJ)	-	-	Through Hole	TO-72-4	TO-206AF, TO-72-4 Metal Can
3N163 TO-72 4L ROHS P-CHANNEL, SINGLE ENHANCEMENT MO Linear Integrated Systems, Inc.	672 In Stock	1 : $9.71000 Bulk	-	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	40 V	50mA	20V	250Ohm @ 100µA, 20V	5V @ 10µA	-6.5V	3.5 pF @ 15 V	-	375mW	-	-	-	Through Hole	TO-72-4	TO-206AF, TO-72-4 Metal Can
3N163 MOSFET P-CH 40V 50MA TO72 Vishay Siliconix	0 In Stock	200 : $14.50000 Tube	-	-	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	50mA (Ta)	20V	250Ohm @ 100µA, 20V	5V @ 10µA	±30V	3.5 pF @ 15 V	-	375mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
3N163-E3 MOSFET P-CH 40V 50MA TO72 Vishay Siliconix	0 In Stock	200 : $14.50000 Bulk	-	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	50mA (Ta)	20V	250Ohm @ 100µA, 20V	5V @ 10µA	±30V	3.5 pF @ 15 V	-	375mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
3N164 MOSFET P-CH 30V 50MA TO72 Vishay Siliconix	0 In Stock	200 : $14.50000 Tube	-	-	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	50mA (Ta)	20V	300Ohm @ 100µA, 20V	5V @ 10µA	±30V	3.5 pF @ 15 V	-	375mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
3N163-2 MOSFET P-CH 40V 50MA TO72 Vishay Siliconix	0 In Stock	20 : $47.50000 Tube	-	-	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	50mA (Ta)	20V	250Ohm @ 100µA, 20V	5V @ 10µA	±30V	3.5 pF @ 15 V	-	375mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.