SiC (Silicon Carbide Junction Transistor) Single FETs, MOSFETs

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FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
274
In Stock
1 : $21.74000
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SiC (Silicon Carbide Junction Transistor)
650 V
144A (Tc)
15V, 20V
9.1mOhm @ 92.1A, 20V
5.6V @ 18.7mA
112 nC @ 18 V
+23V, -7V
4001 pF @ 400 V
-
440W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
150
In Stock
1 : $8.37000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
28A (Tc)
15V, 18V
78mOhm @ 9A, 18V
5.1V @ 2.8mA
21 nC @ 18 V
+23V, -7V
700 pF @ 800 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
134
In Stock
1 : $10.60000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
53A (Tc)
15V, 20V
30mOhm @ 27.9A, 20V
5.6V @ 5.7mA
34 nC @ 18 V
+23V, -7V
1214 pF @ 400 V
-
194W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-40
TO-247-3
344
In Stock
1 : $11.82000
Cut Tape (CT)
1,000 : $7.23593
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
68A (Tc)
15V, 20V
24mOhm @ 34.5A, 20V
5.6V @ 7mA
42 nC @ 18 V
+23V, -7V
1499 pF @ 400 V
-
263W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,730
In Stock
1 : $13.47000
Cut Tape (CT)
2,000 : $6.78888
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
105A (Tc)
15V, 20V
18mOhm @ 46.9A, 20V
5.6V @ 9.5mA
57 nC @ 18 V
+23V, -7V
2038 pF @ 400 V
-
440W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
165
In Stock
1 : $13.86000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
69A (Tc)
15V, 18V
25mOhm @ 27A, 18V
5.1V @ 8.6mA
60 nC @ 18 V
+23V, -7V
1990 pF @ 800 V
-
289W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
128
In Stock
1 : $16.02000
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SiC (Silicon Carbide Junction Transistor)
1200 V
80A (Tc)
15V, 18V
22mOhm @ 32A, 18V
5.1V @ 10.1mA
71 nC @ 18 V
+23V, -7V
2330 pF @ 800 V
-
329W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
575
In Stock
1 : $17.71000
Cut Tape (CT)
750 : $10.62821
Tape & Reel (TR)
-
Tape & Reel (TR)
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Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
78A (Tc)
18V, 20V
38mOhm @ 27A, 20V
5.1V @ 8.6mA
57 nC @ 20 V
+25V, -10V
1738 pF @ 800 V
-
417W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
SDUR6020WT
S1M1000170D
MOSFET SILICON CARBIDE SIC 1700V
SMC Diode Solutions
211
In Stock
1 : $4.57000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
5.2A (Tc)
20V
1.3Ohm @ 2A, 20V
4V @ 500µA
10 nC @ 20 V
+25V, -10V
160 pF @ 1000 V
-
81W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
MFG_MSC360SMA120SCTR.JPG
MSC360SMA120SCT/R
MOSFET SIC 1200 V 360 MOHM PSMT
Microchip Technology
1,296
In Stock
1 : $4.98000
Cut Tape (CT)
1,300 : $4.00002
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
11A (Tc)
20V
450mOhm @ 5A, 20V
3.14V @ 250µA
21 nC @ 20 V
+23V, -10V
255 pF @ 1000 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
16-PSMT
16-PowerSOP Module
TO-247-4
S1M1000170K
MOSFET SILICON CARBIDE SIC 1700V
SMC Diode Solutions
166
In Stock
1 : $5.07000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
5.2A (Tc)
20V
1.3Ohm @ 2A, 20V
4V @ 500µA
10 nC @ 20 V
+25V, -10V
160 pF @ 1000 V
-
81W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
650V 55M TO-LL G3F SIC MOSFET
G3F60MT06L-TR
650V 55M TO-LL G3F SIC MOSFET
GeneSiC Semiconductor
1,981
In Stock
1 : $6.63000
Cut Tape (CT)
1,200 : $3.81250
Tape & Reel (TR)
-
-
Tape & Reel (TR)
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
48A (Tc)
15V, 18V
75mOhm @ 15A, 18V
4.3V @ 7mA
45 nC @ 18 V
+22V, -10V
1322 pF @ 400 V
-
185W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TOLL
8-PowerSFN
1,938
In Stock
1 : $6.64000
Cut Tape (CT)
2,000 : $2.67575
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-
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
41.4A (Tc)
15V, 20V
55mOhm @ 15.4A, 20V
5.6V @ 3.1mA
19 nC @ 18 V
+23V, -7V
669 pF @ 400 V
-
208W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
435
In Stock
1 : $6.66000
Cut Tape (CT)
1,000 : $3.89691
Tape & Reel (TR)
-
Tape & Reel (TR)
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
34.9A (Tc)
15V, 20V
55mOhm @ 15.4A, 20V
5.6V @ 3.1mA
18 nC @ 18 V
+23V, -7V
669 pF @ 400 V
-
148W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
E3M0900170D
E3M0900170D
SIC, MOSFET, 900M, 1700V, TO-247
Wolfspeed, Inc.
415
In Stock
1 : $6.78000
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SiC (Silicon Carbide Junction Transistor)
1700 V
4.4A (Tc)
15V
1.25Ohm @ 1.99A, 15V
4.5V @ 550µA
10 nC @ 15 V
+19V, -8V
202 pF @ 1.2 kV
-
41W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
1,000
In Stock
1 : $6.85000
Cut Tape (CT)
1,000 : $2.78725
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
34.9A (Tc)
15V, 20V
55mOhm @ 15.4A, 20V
5.6V @ 3.1mA
18 nC @ 18 V
+23V, -7V
669 pF @ 400 V
-
148W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3F60MT06J-TR
650V 55M TO-263-7 G3F SIC MOSFET
GeneSiC Semiconductor
666
In Stock
1 : $7.27000
Cut Tape (CT)
800 : $4.27131
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
44A (Tc)
15V, 18V
75mOhm @ 15A, 18V
4.3V @ 7mA
45 nC @ 18 V
+22V, -10V
1322 pF @ 400 V
-
155W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DIW065SIC015
DIW065SIC080
SIC MOSFET, TO-247-3L, N, 36A, 6
Diotec Semiconductor
150
In Stock
1 : $7.29000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
36A (Tc)
18V
80mOhm @ 15A, 18V
4V @ 5mA
75 nC @ 20 V
+18V, -5V
1480 pF @ 600 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
TO-263-8
G3F135MT12J-TR
1200V 135M TO-263-7 G3F SIC MOSF
GeneSiC Semiconductor
775
In Stock
1 : $7.34000
Cut Tape (CT)
800 : $4.13534
Tape & Reel (TR)
-
-
Tape & Reel (TR)
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
18A (Tc)
18V
180mOhm @ 8A, 18V
4.3V @ 5mA
27 nC @ 18 V
+22V, -10V
575 pF @ 800 V
-
87W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
298
In Stock
1 : $7.69000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
32.8A (Tc)
15V, 20V
55mOhm @ 15.4A, 20V
5.6V @ 3.1mA
19 nC @ 18 V
+23V, -7V
669 pF @ 400 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
180
In Stock
1 : $7.96000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
32.8A (Tc)
15V, 20V
55mOhm @ 15.4A, 20V
5.6V @ 3.1mA
19 nC @ 18 V
+23V, -7V
669 pF @ 400 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-40
TO-247-3
1200V 80m (40A @ 25C) SiC MOSF
IXSA40N120L2-7TR
1200V 80m (40A @ 25C) SiC MOSF
IXYS
800
In Stock
1 : $8.26000
Cut Tape (CT)
800 : $3.57500
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
41A (Tc)
15V, 18V
104mOhm @ 10A, 18V
4.5V @ 5mA
53 nC @ 18 V
18V
1214 pF @ 800 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTBL032N065M3S
NTBL032N065M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
1,996
In Stock
58,000
Factory
1 : $8.38000
Bulk
-
-
Bulk
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
55A (Tc)
15V, 18V
44mOhm @ 15A, 18V
4V @ 7.5mA
55 nC @ 18 V
+22V, -8V
1396 pF @ 400 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-HPSOF
8-PowerSFN
TO-263-8
G3F75MT12J-TR
1200V 75M TO-263-7 G3F SIC MOSFE
GeneSiC Semiconductor
796
In Stock
1 : $8.53000
Cut Tape (CT)
800 : $4.97101
Tape & Reel (TR)
-
-
Tape & Reel (TR)
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
31A (Tc)
18V
100mOhm @ 12A, 18V
4.3V @ 9mA
48 nC @ 18 V
+22V, -10V
988 pF @ 800 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
723
In Stock
1 : $8.72000
Cut Tape (CT)
750 : $4.02656
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-
Tape & Reel (TR)
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N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
18.6A (Tc)
18V, 20V
200mOhm @ 5A, 20V
5.1V @ 1.5mA
14 nC @ 20 V
+25V, -10V
350 pF @ 800 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
Showing
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SiC (Silicon Carbide Junction Transistor) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.