SiC (Silicon Carbide Junction Transistor) Single

Results: 329
Manufacturer
Alpha & Omega Semiconductor Inc.CoolCADDiodes IncorporatedfastSiCGeneSiC SemiconductorInfineon TechnologiesIXYSMicro Commercial CoMicrochip TechnologyNexperia USA Inc.onsemiQorvoQuest SemiRohm Semiconductor
Series
-C3M™CoolSiC™CoolSiC™ Gen 2EFalconG2R™, LoRing™G3R™, LoRing™LightningLoRing™MaxSiC™mSiC™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveObsolete
FET Type
-N-Channel
Drain to Source Voltage (Vdss)
100 V300 V400 V600 V650 V700 V750 V900 V1000 V1200 V1700 V2000 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A3A (Tc) (95°C)4A (Tc) (165°C)4A (Tc) (95°C)4.2A (Tc)4.3A (Tc)4.5A (Tc)5A (Tc)5.4A (Tj)6A (Tc)6A (Tc) (90°C)6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.8V12V12V, 15V15V15V, 18V15V, 20V16V, 20V18V18V, 20V20V-
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V10mOhm @ 100A11.3mOhm @ 93A, 20V13.2mOhm @ 64.2A, 20V14.4mOhm @ 37.1A, 18V15mOhm @ 41.5A, 20A15mOhm @ 41.5A, 20V15.8mOhm @ 60A, 18V16.5mOhm @ 60A, 18V17mOhm @ 84.29A, 15V17.5mOhm @ 60A, 18V18mOhm @ 32.5A, 20V
Vgs(th) (Max) @ Id
1.5V @ 14mA1.5V @ 4mA1.5V @ 4mA (Typ)1.6V @ 4mA1.6V @ 4mA (Typ)2V @ 6mA2V @ 8mA2.2V @ 14mA2.2V @ 3mA2.38V @ 5mA2.5V @ 100mA2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 12 V7.9 nC @ 18 V8.1 nC @ 12 V10 nC @ 15 V10.3 nC @ 12 V11 nC @ 20 V11.7 nC @ 12 V12 nC @ 15 V12 nC @ 18 V12.9 nC @ 400 V13 nC @ 15 V13 nC @ 18 V
Vgs (Max)
4.2V @ 1mA+15V, -4V+15V, -5V15V15V, 12V+18V, -3V+18V, -5V+18V, -8V18V+19V, -8V+20V, -2V+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
124 pF @ 1000 V139 pF @ 1000 V142 pF @ 1000 V150 pF @ 1000 V206 pF @ 800 V223 pF @ 400 V233 pF @ 1000 V238 pF @ 1000 V258 pF @ 1.2 kV266 pF @ 1.2 kV290 pF @ 800 V317.5 pF @ 400 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
3.8W (Ta), 150W (Tc)3.8W (Ta), 167W (Tc)3.8W (Ta), 214W (Tc)3.8W (Ta), 341W (Tc)3.8W (Ta), 429W (Tc)15W (Tc)20W (Tc)29W (Tc)40.8W (Tc)41W (Tc)44W (Tc)46.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-55°C ~ 225°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
4-PDFN (8x8)8-HPSOF8-PQFN (5x6), Power56-D2PAK-7D2PAK-7LDieH2PAK-7HiP247™HU3PAKPG-HDSOP-22PG-HDSOP-22-1
Package / Case
4-PowerTSFN8-PowerSFN9-PowerTDFN22-PowerBSOP Module-DieSOT-227-4, miniBLOCTO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-257-3TO-258-3, TO-258AATO-263-7, D2PAK (6 Leads + Tab), TO-263CBTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
GA20JT12-263
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,604
In Stock
1 : $11.03000
Cut Tape (CT)
800 : $8.34001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
+22V, -10V
1545 pF @ 800 V
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
348
In Stock
1 : $19.20000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
26A (Tc)
15V, 18V
131mOhm @ 10A, 18V
5.5V @ 6mA
55 nC @ 18 V
+20V, -7V
-
-
217W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
182
In Stock
1 : $30.09000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
34A (Tc)
15V, 18V
98mOhm @ 13A, 18V
5.5V @ 7.7mA
64 nC @ 18 V
+20V, -7V
-
-
267W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
140
In Stock
1 : $39.75000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
48A (Tc)
15V, 18V
64mOhm @ 20A, 18V
5.5V @ 12.1mA
82 nC @ 18 V
+20V, -7V
-
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
173
In Stock
1 : $57.90000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
89A (Tc)
15V, 18V
33mOhm @ 40A, 18V
5.5V @ 24mA
137 nC @ 18 V
+20V, -7V
-
-
576W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
C3M0065100K
E3M0016120K
SIC, MOSFET, 16M, 1200V, TO-247-
Wolfspeed, Inc.
168
In Stock
1 : $77.34000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
125A (Tc)
15V
22mOhm @ 80.28A, 15V
3.6V @ 22.08mA
223 nC @ 15 V
+19V, -8V
6922 pF @ 1000 V
-
483W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
E4M0013120K
E4M0013120K
13M, 1200V, SIC FET TO-247, AUTO
Wolfspeed, Inc.
196
In Stock
1 : $98.60000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
153A (Tc)
15V
17mOhm @ 84.29A, 15V
3.8V @ 23.18mA
293 nC @ 15 V
+19V, -8V
7407 pF @ 1000 V
-
517W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
177
In Stock
1 : $106.13000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
123A (Tc)
15V, 18V
16.5mOhm @ 60A, 18V
5.5V @ 48mA
246 nC @ 18 V
+20V, -7V
-
-
552W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
D2PAK-7
NTBG1000N170M1
SILICON CARBIDE (SIC) MOSFET EL
onsemi
275
In Stock
17,600
Factory
1 : $4.93000
Cut Tape (CT)
800 : $1.83284
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
4.3A (Tc)
20V
1.43Ohm @ 2A, 20V
4.3V @ 640µA
14 nC @ 20 V
+25V, -15V
150 pF @ 1000 V
-
51W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
NTHL1000N170M1
SILICON CARBIDE (SIC) MOSFET EL
onsemi
478
In Stock
1 : $5.49000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
4.2A (Tc)
20V
1.43Ohm @ 2A, 20V
4.3V @ 640µA
14 nC @ 20 V
+25V, -15V
150 pF @ 1000 V
-
48W
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
1,197
In Stock
1 : $6.84000
Cut Tape (CT)
1,000 : $2.80088
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
8.1A (Tc)
15V, 18V
233.9mOhm @ 3A, 18V
5.1V @ 900µA
7.9 nC @ 18 V
+20V, -7V
290 pF @ 800 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R160MT12J-TR
1200V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
4,698
In Stock
1 : $7.26000
Cut Tape (CT)
800 : $5.45001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
19A (Tc)
15V, 18V
180mOhm @ 10A, 18V
2.7V @ 5mA
23 nC @ 15 V
+22V, -10V
724 pF @ 800 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
NTHL070N120M3S
SIC MOS TO247-3L 70MOHM 1200V M3
onsemi
108
In Stock
37,350
Factory
1 : $8.52000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
34A (Tc)
18V
87mOhm @ 15A, 18V
4.4V @ 7mA
57 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
160W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D2PAK-7
NVBG070N120M3S
SILICON CARBIDE (SIC) MOSFET-ELI
onsemi
706
In Stock
1 : $13.69000
Cut Tape (CT)
800 : $9.45540
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
36A (Tc)
18V
87mOhm @ 15A, 18V
4.4V @ 7mA
57 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
172W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
161
In Stock
1 : $15.94000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
38A (Tc)
18V, 20V
75mOhm @ 13A, 20V
5.1V @ 4.3mA
32 nC @ 20 V
+23V, -5V
880 pF @ 800 V
-
197W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-4-11
TO-247-4
GA20JT12-263
G2R1000MT33J-TR
3300V 1000M TO-263-7 G2R SIC MOS
GeneSiC Semiconductor
686
In Stock
1 : $18.69000
Cut Tape (CT)
800 : $14.23004
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
3300 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
NVH4L040N120M3S
SIC MOS TO247-4L 40MOHM 1200V M3
onsemi
288
In Stock
1 : $19.35000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+18V, -3V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
593
In Stock
1 : $20.25000
Cut Tape (CT)
750 : $14.47949
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
750 V
98A (Tc)
15V, 20V
15mOhm @ 41.5A, 20A
5.6V @ 14.9mA
80 nC @ 18 V
+23V, -5V
2869 pF @ 500 V
-
384W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
GA20JT12-263
G3R30MT12J-TR
1200V 30M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
1,078
In Stock
1 : $22.83000
Cut Tape (CT)
800 : $17.64003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
85A (Tc)
15V, 18V
34mOhm @ 45A, 18V
2.7V @ 24mA
118 nC @ 15 V
+22V, -10V
3863 pF @ 800 V
-
408W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
154
In Stock
1 : $32.28000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
100A (Tc)
18V, 20V
25mOhm @ 43A, 20V
5.1V @ 13.7mA
82 nC @ 20 V
+23V, -5V
2667 pF @ 800 V
-
429W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-4-11
TO-247-4
C3M0065100K
E3M0032120K
SIC, MOSFET, 32M, 1200V, TO-247-
Wolfspeed, Inc.
315
In Stock
1 : $34.97000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
67A (Tc)
15V
43mOhm @ 38.9A, 15V
3.6V @ 10.7mA
113 nC @ 15 V
+19V, -8V
3460 pF @ 1000 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
E4M0015075K1
E4M0015075K1
MOSFETS AUTOMOTIVE 372W 3.8V NC
Wolfspeed, Inc.
301
In Stock
1 : $37.59000
Bulk
Bulk
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
750 V
128A (Tc)
15V
21mOhm @ 55.8A, 15V
3.8V @ 15.4mA
191 nC @ 15 V
+19V, -8V
5128 pF @ 500 V
-
372W (Tc)
-40°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
GCMS020B120S1-E1
GCMS020B120S1-E1
SIC 1200V 20M MOSFET & 50A SBD S
SemiQ
30
In Stock
1 : $54.02000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
113A (Tc)
20V
28mOhm @ 50A, 20V
4V @ 20mA
215 nC @ 20 V
+25V, -10V
5279 pF @ 1000 V
-
395W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
238
In Stock
1 : $4.44000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
6.3A (Tc)
15V
675mOhm @ 1.2A, 15V
3.5V @ 1.2mA
12 nC @ 15 V
+15V, -5V
206 pF @ 800 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
MOSFET SIC 1200 V 360 MOHM TO-26
MSC360SMA120SDT/R
MOSFET SIC 1200 V 360 MOHM TO-26
Microchip Technology
800
In Stock
1 : $4.98000
Cut Tape (CT)
800 : $4.00003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
12A (Tc)
18V, 20V
450mOhm @ 5A, 20V
5V @ 250µA
21 nC @ 20 V
+23V, -10V
258 pF @ 1.2 kV
-
92W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 329

SiC (Silicon Carbide Junction Transistor) Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.