IXYS Single FETs, MOSFETs

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of 2,406

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTP44N10T MOSFET N-CH 100V 44A TO220AB IXYS	2,130 In Stock	1 : $2.72000 Tube	-	Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	44A (Tc)	10V	30mOhm @ 22A, 10V	4.5V @ 25µA	33 nC @ 10 V	±30V	1262 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTY02N120P MOSFET N-CH 1200V 200MA TO252 IXYS	11,964 In Stock	1 : $3.17000 Tube	-	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	75Ohm @ 500mA, 10V	4V @ 100µA	4.7 nC @ 10 V	±20V	104 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY01N100 MOSFET N-CH 1000V 100MA TO252AA IXYS	12,618 In Stock 1,120 Factory	1 : $3.55000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	100mA (Tc)	10V	80Ohm @ 100mA, 10V	4.5V @ 25µA	6.9 nC @ 10 V	±20V	54 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY08N50D2-TRL MOSFET N-CH 500V 800MA TO252AA IXYS	4,977 In Stock	1 : $3.67000 Cut Tape (CT) 2,500 : $1.20600 Tape & Reel (TR)	-	Depletion	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	800mA (Tj)	0V	4.6Ohm @ 400mA, 0V	4.5V @ 25µA	12.7 nC @ 5 V	±20V	312 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY2N100P MOSFET N-CH 1000V 2A TO252 IXYS	1,246 In Stock	1 : $4.41000 Tube	-	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	2A (Tc)	10V	7.5Ohm @ 500mA, 10V	4.5V @ 100µA	24.3 nC @ 10 V	±20V	655 pF @ 25 V	-	86W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY01N100D MOSFET N-CH 1000V 400MA TO252AA IXYS	11,530 In Stock 840 Factory	1 : $4.91047 Tube	-	Depletion	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	400mA (Tc)	0V	80Ohm @ 50mA, 0V	4.5V @ 25µA	5.8 nC @ 5 V	±20V	100 pF @ 25 V	-	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTP76P10T MOSFET P-CH 100V 76A TO220AB IXYS	5,878 In Stock	1 : $7.53000 Tube	-	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	76A (Tc)	10V	25mOhm @ 38A, 10V	4V @ 250µA	197 nC @ 10 V	±15V	13700 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA44P15T-TRL MOSFET P-CH 150V 44A TO263 IXYS	23,141 In Stock	1 : $7.70000 Cut Tape (CT) 800 : $3.25713 Tape & Reel (TR)	-	TrenchP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	44A (Tc)	10V	65mOhm @ 22A, 10V	4V @ 250µA	175 nC @ 10 V	±15V	13400 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA44P15T MOSFET P-CH 150V 44A TO263 IXYS	6,394 In Stock	1 : $7.70000 Tube	-	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	44A (Tc)	10V	65mOhm @ 22A, 10V	4V @ 250µA	175 nC @ 10 V	±15V	13400 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA76P10T-TRL MOSFET P-CH 100V 76A TO263 IXYS	4,708 In Stock	1 : $7.70000 Cut Tape (CT) 800 : $3.25713 Tape & Reel (TR)	-	TrenchP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	76A (Tc)	10V	25mOhm @ 38A, 10V	4V @ 250µA	197 nC @ 10 V	±15V	13700 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA96P085T MOSFET P-CH 85V 96A TO263 IXYS	3,478 In Stock	1 : $7.70000 Tube	-	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	85 V	96A (Tc)	10V	13mOhm @ 48A, 10V	4V @ 250µA	180 nC @ 10 V	±15V	13100 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA76P10T MOSFET P-CH 100V 76A TO263 IXYS	2,495 In Stock	1 : $7.70000 Tube	-	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	76A (Tc)	10V	25mOhm @ 38A, 10V	4V @ 250µA	197 nC @ 10 V	±15V	13700 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA96P085T-TRL MOSFET P-CH 85V 96A TO263 IXYS	2,306 In Stock	1 : $7.70000 Cut Tape (CT) 800 : $3.25713 Tape & Reel (TR)	-	TrenchP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	85 V	96A (Tc)	10V	13mOhm @ 48A, 10V	4V @ 250µA	180 nC @ 10 V	±15V	13100 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA120P065T MOSFET P-CH 65V 120A TO263 IXYS	1,336 In Stock	1 : $7.70000 Tube	-	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65 V	120A (Tc)	10V	10mOhm @ 500mA, 10V	4V @ 250µA	185 nC @ 10 V	±15V	13200 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP10P50P MOSFET P-CH 500V 10A TO220AB IXYS	5,407 In Stock	1 : $7.86000 Tube	-	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA10P50P-TRL MOSFET P-CH 500V 10A TO263 IXYS	52,603 In Stock	1 : $8.03000 Cut Tape (CT) 800 : $3.44313 Tape & Reel (TR)	-	Polar	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA36P15P-TRL MOSFET P-CH 150V 36A TO263 IXYS	6,922 In Stock	1 : $8.03000 Cut Tape (CT) 800 : $3.44313 Tape & Reel (TR)	-	PolarP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	110mOhm @ 18A, 10V	4.5V @ 250µA	55 nC @ 10 V	±20V	3100 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA26P20P-TRL MOSFET P-CH 200V 26A TO263 IXYS	5,099 In Stock	1 : $8.03000 Cut Tape (CT) 800 : $3.44313 Tape & Reel (TR)	-	Polar	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA10P50P MOSFET P-CH 500V 10A TO263 IXYS	3,943 In Stock	1 : $8.03000 Tube	-	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA26P20P MOSFET P-CH 200V 26A TO263 IXYS	3,870 In Stock	1 : $8.03000 Tube	-	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA52P10P-TRL MOSFET P-CH 100V 52A TO263 IXYS	1,069 In Stock	1 : $8.03000 Cut Tape (CT) 800 : $3.44313 Tape & Reel (TR)	-	PolarP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 26A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP26P20P MOSFET P-CH 200V 26A TO220AB IXYS	1,950 In Stock	1 : $8.19000 Tube	-	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTQ52P10P MOSFET P-CH 100V 52A TO3P IXYS	1,575 In Stock	1 : $8.61000 Tube	-	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTP140P05T MOSFET P-CH 50V 140A TO220AB IXYS	4,130 In Stock	1 : $8.83000 Tube	-	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	140A (Tc)	10V	9mOhm @ 70A, 10V	4V @ 250µA	200 nC @ 10 V	±15V	13500 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFH52N30P MOSFET N-CH 300V 52A TO247AD IXYS	349 In Stock	1 : $8.83000 Tube	-	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	52A (Tc)	10V	66mOhm @ 500mA, 10V	5V @ 4mA	110 nC @ 10 V	±20V	3490 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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