GeneSiC Semiconductor Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2,218
In Stock
1 : $10.50000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
1,446
In Stock
1 : $10.77000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-263-8
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,253
In Stock
1 : $11.03000
Cut Tape (CT)
800 : $8.34001
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
+22V, -10V
1545 pF @ 800 V
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
1,007
In Stock
1 : $12.24000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
923
In Stock
1 : $12.98000
Cut Tape (CT)
800 : $9.94005
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
+15V, -5V
854 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R40MT12D
SIC MOSFET N-CH 71A TO247-3
GeneSiC Semiconductor
1,576
In Stock
1 : $17.42000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
1,743
In Stock
1 : $17.67000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-263-8
G2R1000MT33J-TR
3300V 1000M TO-263-7 G2R SIC MOS
GeneSiC Semiconductor
932
In Stock
1 : $18.69000
Cut Tape (CT)
800 : $14.23004
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,231
In Stock
1 : $22.53000
Tube
Tariff may apply if shipping to the United States
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-263-8
G3R30MT12J-TR
1200V 30M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
792
In Stock
1 : $22.83000
Cut Tape (CT)
800 : $17.64003
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
85A (Tc)
15V, 18V
34mOhm @ 45A, 18V
2.7V @ 24mA
118 nC @ 15 V
+22V, -10V
3863 pF @ 800 V
-
408W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
1,016
In Stock
1 : $33.07000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
GeneSiC Semiconductor
748
In Stock
1 : $36.09000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
128A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
±15V
5873 pF @ 800 V
-
542W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
GA100JT12-227
G3R20MT12N
SIC MOSFET N-CH 105A SOT227
GeneSiC Semiconductor
221
In Stock
1 : $56.20000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
105A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
+20V, -10V
5873 pF @ 800 V
-
365W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-4 Top
G3R12MT12K
1200V 12M TO-247-4 G3R SIC MOSFE
GeneSiC Semiconductor
466
In Stock
1 : $62.01000
Tube
-
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
157A (Tc)
15V, 18V
13mOhm @ 100A, 18V
2.7V @ 50mA
288 nC @ 15 V
+22V, -10V
9335 pF @ 800 V
-
567W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
285
In Stock
1 : $107.20000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
809W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
149
In Stock
1 : $295.67000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
GeneSiC Semiconductor
7,575
In Stock
1 : $4.74000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
420mOhm @ 4A, 15V
2.69V @ 2mA
12 nC @ 15 V
±15V
334 pF @ 800 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
2,791
In Stock
1 : $6.52000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,347
In Stock
1 : $7.21000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
GeneSiC Semiconductor
789
In Stock
1 : $10.40000
Tube
-
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
GeneSiC Semiconductor
248
In Stock
1 : $32.73000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R60MT07D
750V 60M TO-247-3 G3R SIC MOSFET
GeneSiC Semiconductor
1,085
In Stock
1 : $10.14000
Tube
Tariff may apply if shipping to the United States
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R350MT12J-TR
1200V 350M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
498
In Stock
1 : $5.51000
Cut Tape (CT)
800 : $4.05003
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
15V, 18V
395mOhm @ 4A, 18V
2.7V @ 2mA
10 nC @ 15 V
+22V, -10V
331 pF @ 800 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G2R1000MT17J-TR
1700V 1000M TO-263-7 G2R SIC MOS
GeneSiC Semiconductor
595
In Stock
1 : $6.44000
Cut Tape (CT)
800 : $4.79003
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
4V @ 2mA
11 nC @ 20 V
+20V, -5V
139 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
650V 55M TO-LL G3F SIC MOSFET
G3F60MT06L-TR
650V 55M TO-LL G3F SIC MOSFET
GeneSiC Semiconductor
1,981
In Stock
1 : $6.63000
Cut Tape (CT)
2,000 : $3.81250
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
48A (Tc)
15V, 18V
75mOhm @ 15A, 18V
4.3V @ 7mA
45 nC @ 18 V
+22V, -10V
1322 pF @ 400 V
-
185W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TOLL
8-PowerSFN
Showing
of 82

GeneSiC Semiconductor Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.