GaNPower Single FETs, MOSFETs

Results: 21
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Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
GPI65005DF68
GaNFET N-CH 650V 5A DFN6x8
GaNPower
423
Marketplace
1 : $2.50000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
5A
6V
-
1.7V @ 3.5mA
1.6 nC @ 6 V
+7.5V, -12V
39 pF @ 500 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPI65005DF
GANFET N-CH 650V 5A DFN 5X6
GaNPower
117
Marketplace
1 : $2.50000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
5A
6V
-
1.4V @ 1.75mA
2.6 nC @ 6 V
+7.5V, -12V
45 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN5x6
6-PowerTDFN
GPI90005DF88
GaNFET N-CH 900V 5A DFN8x8
GaNPower
670
Marketplace
1 : $3.13000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
900 V
5A
6V
320mOhm @ 1A, 6V
1.3V @ 3.5mA
1.6 nC @ 6 V
+7.5V, -12V
39 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (8x8)
8-DFN
GPI65005DF
GANFET N-CH 650V 8A DFN5X6
GaNPower
1,000
Marketplace
1 : $4.00000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
8A
6V
-
1.4V @ 3.5mA
2.1 nC @ 6 V
+7.5V, -12V
63 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPI65008DF68
GaNFET N-CH 650V 8A DFN6x8
GaNPower
980
Marketplace
1 : $4.00000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
8A
6V
-
1.7V @ 3.5mA
2.1 nC @ 6 V
+7.5V, -12V
63 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPI90007DF88
GaNFET N-CH 900V 7A DFN8x8
GaNPower
606
Marketplace
1 : $4.38000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
900 V
7A
6V
225mOhm @ 1.4A, 6V
1.2V @ 3.5mA
2.1 nC @ 6 V
+7.5V, -12V
60 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (8x8)
8-DFN
GPI90010DF88
GaNFET N-CH 900V 10A DFN8x8
GaNPower
2,765
Marketplace
1 : $6.25000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
900 V
10A
6V
162mOhm @ 2.5A, 6V
1.2V @ 3.5mA
2.6 nC @ 6 V
+7.5V, -12V
78 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (8x8)
8-DFN
GPI65015DFN
GANFET N-CH 650V 15A DFN 8X8
GaNPower
1,000
Marketplace
1 : $7.50000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
15A
6V
-
1.2V @ 3.5mA
3.3 nC @ 6 V
+7.5V, -12V
116 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPI65015TO
GANFET N-CH 650V 15A TO220
GaNPower
129
Marketplace
1 : $7.50000
Tube
-
-
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
15A
6V
-
1.2V @ 3.5mA
3.3 nC @ 6 V
+7.5V, -12V
123 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
GPI65015DFN
GANFET N-CH 650V 30A DFN8X8
GaNPower
975
Marketplace
1 : $15.00000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
30A
6V
-
1.2V @ 3.5mA
5.8 nC @ 6 V
+7.5V, -12V
241 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPI65060DFC
GaNFET N-CH 650V 60A DFN8x8 cu
GaNPower
200
Marketplace
1 : $33.00000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
60A
6V
30mOhm @ 6A, 12V
1.2V @ 3.5mA
16 nC @ 6 V
+7.5V, -12V
420 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (8x8)
8-DFN
GPI65007DF88
GaNFET N-CH 650V 7A DFN8x8
GaNPower
2,000
Marketplace
1 : $3.96000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
7A
6V
-
1.5V @ 3.5mA
2.1 nC @ 6 V
+7.5V, -12V
60 pF @ 500 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPI65007DF56
GaNFET N-CH 650V 7A DFN5x6
GaNPower
35
Marketplace
1 : $3.50000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
7A
6V
-
1.5V @ 3.5mA
2.1 nC @ 6 V
+7.5V, -12V
76.1 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPI65005DF
GANFET N-CH 650V 10A DFN 5X6
GaNPower
90
Marketplace
1 : $5.00000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
10A
6V
-
1.4V @ 3.5mA
2.6 nC @ 6 V
+7.5V, -12V
90 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPI65030TO5L
GaNFET N-CH 650V 30A TO263-5L
GaNPower
100
Marketplace
1 : $15.00000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
30A
6V
-
1.4V @ 3.5mA
5.8 nC @ 6 V
+7.5V, -12V
241 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPI65015DFN
GANFET N-CH 650V 60A DFN8X8
GaNPower
0
Marketplace
Active
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
60A
6V
-
1.2V @ 3.5mA
16 nC @ 6 V
+7.5V, -12V
420 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPIHV30SB5L
GANFET N-CH 1200V 30A TO263-5L
GaNPower
0
Marketplace
Active
-
-
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
1200 V
30A
6V
-
1.4V @ 3.5mA
8.25 nC @ 6 V
+7.5V, -12V
236 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPIXV30DFN
GANFET N-CH 1200V 30A DFN8X8
GaNPower
0
Marketplace
Active
-
-
Bag
Active
N-Channel
GaNFET (Gallium Nitride)
1200 V
30A
6V
-
1.4V @ 3.5mA
8.25 nC @ 6 V
+7.5V, -12V
236 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GPIHV5DK
GaNFET N-CH 1200V 5A TO252
GaNPower
0
Marketplace
Active
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
1200 V
5A
6V
-
1.7V @ 3.5mA
1.9 nC @ 6 V
+7.5V, -12V
90 pF @ 700 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPIHV10DK
GaNFET N-CH 1200V 10A TO252
GaNPower
0
Marketplace
Active
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
1200 V
10A
6V
-
1.7V @ 3.5mA
3.5 nC @ 6 V
+7.5V, -12V
105 pF @ 700 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
GPIHV7DK
GaNFET N-CH 1200V 7A TO252
GaNPower
0
Marketplace
Active
-
-
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
1200 V
7A
6V
-
1.7V @ 3.5mA
3.1 nC @ 6 V
+7.5V, -12V
90 pF @ 700 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
-
-
Showing
of 21

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.