GaNFET (Cascode Gallium Nitride FET) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TP65H030G4PQS-TR GANFET N-CH 650V 55.7A TOLL Renesas Electronics Corporation	219 In Stock	1 : $9.89000 Cut Tape (CT) 2,000 : $4.53750 Tape & Reel (TR)	-	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	55.7A (Tc)	12V	41mOhm @ 30A, 12V	4.8V @ 1mA	24.5 nC @ 12 V	±20V	1500 pF @ 400 V	-	192W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
TP65H030G4PRS-TR GANFET N-CH 650V 55.7A TOLT Renesas Electronics Corporation	982 In Stock	1 : $9.96000 Cut Tape (CT) 1,300 : $4.57500 Tape & Reel (TR)	-	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	55.7A (Tc)	12V	41mOhm @ 30A, 12V	4.8V @ 1mA	24.5 nC @ 12 V	±20V	1500 pF @ 400 V	-	192W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	TOLT	16-PowerSOP Module
TP65H030G4PWS GANFET N-CH 650V 55.7A TO247-3 Renesas Electronics Corporation	1,056 In Stock	1 : $10.16000 Tube	-	SuperGaN®	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	55.7A (Tc)	12V	41mOhm @ 30A, 12V	4.8V @ 1mA	24.5 nC @ 12 V	±20V	1500 pF @ 400 V	-	192W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
GAN041-650WSBQ GAN041-650WSB/SOT429/TO-247 Nexperia USA Inc.	226 In Stock	1 : $13.91000 Tube	-	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	47.2A (Tc)	10V	41mOhm @ 32A, 10V	4.5V @ 1mA	22 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H480G4JSG-TR GANFET N-CH 650V 3.6A 3PQFN Renesas Electronics Corporation	1,119 In Stock	1 : $2.03000 Cut Tape (CT) 4,000 : $0.55025 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	3.6A (Tc)	8V	560mOhm @ 3.4A, 8V	2.8V @ 500µA	9 nC @ 8 V	±18V	760 pF @ 400 V	-	13.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (5x6)	3-PowerTDFN
TP65H050WS GANFET N-CH 650V 34A TO247-3 Renesas Electronics Corporation	390 In Stock	1 : $18.76000 Tube	-	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	34A (Tc)	12V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H150G4LSGE-TR 650V, 150MOHM GAN FET IN 8X8 PQF Renesas Electronics Corporation	3,000 In Stock	1 : $3.99000 Cut Tape (CT) 3,000 : $1.35000 Tape & Reel (TR)	-	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	16A (Tc)	10V	180mOhm @ 8.5A, 10V	4.8V @ 500µA	8 nC @ 10 V	±20V	598 pF @ 400 V	-	52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerTDFN
TP65H085G4QS-TR 650V, 85MOHM GAN FET IN TOLL Renesas Electronics Corporation	2,000 In Stock	1 : $6.05000 Cut Tape (CT) 2,000 : $2.36250 Tape & Reel (TR)	-	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	15.3 nC @ 10 V	20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
TP65H035G4WS GANFET N-CH 650V 46.5A TO247-3 Renesas Electronics Corporation	0 In Stock Check Lead Time	1 : $12.05000 Tube	-	SuperGaN™	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 0 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3	TO-247-3
TP65H050WSQA GANFET N-CH 650V 36A TO247-3 Renesas Electronics Corporation	5 In Stock	1 : $19.85000 Tube	-	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	36A (Tc)	10V	60mOhm @ 25A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP65H035WS GANFET N-CH 650V 46.5A TO247-3 Renesas Electronics Corporation	0 In Stock Check Lead Time	1 : $22.07000 Tube	-	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	12V	41mOhm @ 30A, 10V	4.8V @ 1mA	36 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H035WSQA GANFET N-CH 650V 47.2A TO247-3 Renesas Electronics Corporation	0 In Stock Check Lead Time	1 : $23.22000 Tube	-	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	47.2A (Tc)	10V	41mOhm @ 32A, 10V	4.5V @ 1mA	24 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
HMHL065N185C GAN HEMT,650V,12A,185M,CASCODE,D Bruckewell	0 In Stock Check Lead Time	1 : $8.56000 Bulk	-	-		Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	12A (Tc)	6V	185mOhm @ 5A, 6V	2.2V @ 1mA	-	+20V, -20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (8x8)	8-LDFN Exposed Pad
HMP065N180C GAN HEMT,650V,16.1A,185M,CASCODE Bruckewell	5 In Stock	1 : $9.20000 Bulk	-	-	Bulk	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	16.1A (Tc)	10V	180mOhm @ 5A, 10V	3V @ 1mA	-	+20V, -20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
TP90H050WS GANFET N-CH 900V 34A TO247-3 Renesas Electronics Corporation	0 In Stock	450 : $10.18751 Tube	-	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	900 V	34A (Tc)	10V	63mOhm @ 22A, 10V	4.4V @ 700µA	17.5 nC @ 10 V	±20V	980 pF @ 600 V	-	119W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3	TO-247-3
GAN063-650WSAQ GANFET N-CH 650V 34.5A TO247-3 Nexperia USA Inc.	0 In Stock	300 : $11.45000 Tube	-	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	34.5A (Tc)	10V	60mOhm @ 25A, 10V	4.5V @ 1mA	15 nC @ 10 V	±20V	1000 pF @ 400 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
NTP8G202NG GANFET N-CH 600V 9A TO220-3 onsemi	0 In Stock	Obsolete	-	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	600 V	9A (Tc)	8V	350mOhm @ 5.5A, 8V	2.6V @ 500µA	9.3 nC @ 4.5 V	±18V	760 pF @ 400 V	-	65W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
TPH3208PS GANFET N-CH 650V 20A TO220AB Renesas Electronics Corporation	0 In Stock	Obsolete	-	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	20A (Tc)	10V	130mOhm @ 13A, 8V	2.6V @ 300µA	14 nC @ 8 V	±18V	760 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TPH3212PS GANFET N-CH 650V 27A TO220AB Renesas Electronics Corporation	0 In Stock	Obsolete	-	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	27A (Tc)	10V	72mOhm @ 17A, 8V	2.6V @ 400uA	14 nC @ 8 V	±18V	1130 pF @ 400 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP90H180PS GANFET N-CH 900V 15A TO220AB Renesas Electronics Corporation	0 In Stock	Obsolete	-	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	900 V	15A (Tc)	10V	205mOhm @ 10A, 10V	2.6V @ 500µA	10 nC @ 8 V	±18V	780 pF @ 600 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H070LDG GANFET N-CH 650V 25A 3PQFN Renesas Electronics Corporation	0 In Stock	Discontinued at DigiKey	-	TP65H070L	Tube	Discontinued at DigiKey	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	25A (Tc)	10V	85mOhm @ 16A, 10V	4.8V @ 700µA	9.3 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerDFN
TP65H070LSG GANFET N-CH 650V 25A 3PQFN Renesas Electronics Corporation	0 In Stock	Discontinued at DigiKey	-	TP65H070L	Tube	Discontinued at DigiKey	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	25A (Tc)	10V	85mOhm @ 16A, 10V	4.8V @ 700µA	9.3 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerDFN

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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