Cambridge GaN Devices Single FETs, MOSFETs

Results: 7
Series
ICeGaN™ICeGaN™ H2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
-P-Channel
Current - Continuous Drain (Id) @ 25°C
7A8.5A (Tc)12A12A (Tc)27A27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
9V, 20V12V
Rds On (Max) @ Id, Vgs
77mOhm @ 2.2A, 12V182mOhm @ 900mA, 12V280mOhm @ 600mA, 12V336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 10mA4.2V @ 2.3mA4.2V @ 2.75mA4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
1.2 nC @ 12 V1.4 nC @ 12 V1.9 nC @ 12 V2.3 nC @ 12 V4 nC @ 12 V6 nC @ 12 V
FET Feature
-Current Sensing
Supplier Device Package
8-DFN (5x6)16-DFN (8x8)
Package / Case
8-PowerVDFN16-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
CGD65B130SH2
CGD65B240SH2
650V GAN HEMT, 240MOHM, DFN5X6.
Cambridge GaN Devices
5,000
In Stock
1 : $4.34000
Cut Tape (CT)
5,000 : $2.02500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
GaNFET (Gallium Nitride)
650 V
7A
12V
336mOhm @ 500mA, 12V
4.2V @ 2.3mA
1.2 nC @ 12 V
+20V, -1V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerVDFN
CGD65B200S2-T13
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
Cambridge GaN Devices
4,233
In Stock
1 : $4.55000
Cut Tape (CT)
5,000 : $2.12500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
GaNFET (Gallium Nitride)
650 V
8.5A (Tc)
9V, 20V
280mOhm @ 600mA, 12V
4.2V @ 2.75mA
1.4 nC @ 12 V
+20V, -1V
Current Sensing
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerVDFN
CGD65A055SH2
CGD65A130SH2
650V GAN HEMT, 130MOHM, DFN8X8.
Cambridge GaN Devices
3,500
In Stock
1 : $6.11000
Cut Tape (CT)
3,500 : $3.24523
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
GaNFET (Gallium Nitride)
650 V
12A
12V
182mOhm @ 900mA, 12V
4.2V @ 4.2mA
1.9 nC @ 12 V
+20V, -1V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
16-DFN (8x8)
16-PowerVDFN
CGD65A130S2-T13
CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.
Cambridge GaN Devices
3,342
In Stock
1 : $6.25000
Cut Tape (CT)
3,500 : $3.32189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
GaNFET (Gallium Nitride)
650 V
12A (Tc)
12V
182mOhm @ 900mA, 12V
4.2V @ 4.2mA
2.3 nC @ 12 V
+20V, -1V
Current Sensing
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
16-DFN (8x8)
16-PowerVDFN
CGD65B130S2-T13
CGD65B130S2-T13
650V GAN HEMT, 130MOHM, DFN5X6.
Cambridge GaN Devices
4,875
In Stock
1 : $6.42000
Cut Tape (CT)
5,000 : $3.00000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
GaNFET (Gallium Nitride)
650 V
12A (Tc)
9V, 20V
182mOhm @ 900mA, 12V
4.2V @ 4.2mA
2.3 nC @ 12 V
+20V, -1V
Current Sensing
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerVDFN
CGD65A055SH2
CGD65A055SH2
650V GAN HEMT, 55MOHM, DFN8X8. W
Cambridge GaN Devices
3,500
In Stock
1 : $11.97000
Cut Tape (CT)
3,500 : $6.36270
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
GaNFET (Gallium Nitride)
650 V
27A
12V
77mOhm @ 2.2A, 12V
4.2V @ 10mA
4 nC @ 12 V
+20V, -1V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
16-DFN (8x8)
16-PowerVDFN
CGD65A055S2-T07
CGD65A055S2-T07
650V GAN HEMT, 55MOHM, DFN8X8. W
Cambridge GaN Devices
705
In Stock
1 : $15.06000
Cut Tape (CT)
1,000 : $9.53743
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
GaNFET (Gallium Nitride)
650 V
27A (Tc)
12V
77mOhm @ 2.2A, 12V
4.2V @ 10mA
6 nC @ 12 V
+20V, -1V
Current Sensing
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
16-DFN (8x8)
16-PowerVDFN
Showing
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Cambridge GaN Devices Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.