9A (Ta) Single FETs, MOSFETs

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of 130

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
PMPB11EN,115 MOSFET N-CH 30V 9A DFN2020MD-6 Nexperia USA Inc.	1,765 In Stock	1 : $0.71000 Cut Tape (CT) 3,000 : $0.15573 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	14.5mOhm @ 9A, 10V	2V @ 250µA	20.6 nC @ 10 V	±20V	840 pF @ 10 V	-	1.7W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
DMP2021UFDF-7 MOSFET P-CH 20V 9A 6UDFN Diodes Incorporated	827 In Stock	1 : $1.15000 Cut Tape (CT) 3,000 : $0.28071 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	9A (Ta)	1.5V, 4.5V	16mOhm @ 7A, 4.5V	1V @ 250µA	59 nC @ 8 V	±8V	2760 pF @ 15 V	-	730mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
TK9J90E,S1E MOSFET N-CH 900V 9A TO3P Toshiba Semiconductor and Storage	7,327 In Stock	1 : $3.98000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	9A (Ta)	10V	1.3Ohm @ 4.5A, 10V	4V @ 900µA	46 nC @ 10 V	±30V	2000 pF @ 25 V	-	250W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
DMN2020UFCL-7 MOSFET N-CH 20V 9A X1-DFN1616-6 Diodes Incorporated	1,609 In Stock 999,000 Factory	1 : $0.67000 Cut Tape (CT) 3,000 : $0.14865 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	9A (Ta)	1.8V, 4.5V	14mOhm @ 9A, 4.5V	900mV @ 250µA	21.5 nC @ 4.5 V	±10V	1788 pF @ 10 V	-	610mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X1-DFN1616-6 (Type E)	6-PowerUFDFN
NTMFS4C09NT1G MOSFET N-CH 30V 9A 5DFN onsemi	2,428 In Stock	1 : $0.68000 Cut Tape (CT) 1,500 : $0.17205 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	5.8mOhm @ 30A, 10V	2.1V @ 250µA	10.9 nC @ 4.5 V	±20V	1252 pF @ 15 V	-	760mW (Ta), 25.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
DMN4800LSS-13 MOSFET N-CH 30V 9A 8SOP Diodes Incorporated	4,995 In Stock 10,000 Factory	1 : $0.71000 Cut Tape (CT) 2,500 : $0.16476 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	16mOhm @ 9A, 10V	1.6V @ 250µA	9.47 nC @ 5 V	±25V	798 pF @ 10 V	-	1.46W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PMPB10XNEZ MOSFET N-CH 20V 9A DFN2020MD-6 Nexperia USA Inc.	7,356 In Stock	1 : $0.75000 Cut Tape (CT) 3,000 : $0.17569 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	9A (Ta)	1.8V, 4.5V	14mOhm @ 9A, 4.5V	900mV @ 250µA	34 nC @ 4.5 V	±12V	2175 pF @ 10 V	-	1.7W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
TPC8129,LQ(S MOSFET P-CH 30V 9A 8SOP Toshiba Semiconductor and Storage	2,963 In Stock	1 : $0.95000 Cut Tape (CT) 2,500 : $0.22910 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	22mOhm @ 4.5A, 10V	2V @ 200µA	39 nC @ 10 V	+20V, -25V	1650 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SIS406DN-T1-GE3 MOSFET N-CH 30V 9A PPAK1212-8 Vishay Siliconix	6,897 In Stock	1 : $1.19000 Cut Tape (CT) 3,000 : $0.30143 Tape & Reel (TR)	-	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	11mOhm @ 12A, 10V	3V @ 250µA	28 nC @ 10 V	±25V	1100 pF @ 15 V	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
IRF7469TRPBF MOSFET N-CH 40V 9A 8SO Infineon Technologies	12,787 In Stock	1 : $1.56000 Cut Tape (CT) 4,000 : $0.38991 Tape & Reel (TR)	-	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	9A (Ta)	4.5V, 10V	17mOhm @ 9A, 10V	3V @ 250µA	23 nC @ 4.5 V	±20V	2000 pF @ 20 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TPC8133,LQ(S MOSFET P-CH 40V 9A 8SOP Toshiba Semiconductor and Storage	2,362 In Stock	1 : $2.12000 Cut Tape (CT) 2,500 : $0.58778 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	9A (Ta)	4.5V, 10V	15mOhm @ 4.5A, 10V	2V @ 500µA	64 nC @ 10 V	+20V, -25V	2900 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SSM6K504NU,LF MOSFET N-CH 30V 9A 6UDFNB Toshiba Semiconductor and Storage	2,627 In Stock	1 : $0.50000 Cut Tape (CT) 3,000 : $0.10769 Tape & Reel (TR)	-	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	19.5mOhm @ 4A, 10V	2.5V @ 100µA	4.8 nC @ 4.5 V	±20V	620 pF @ 15 V	-	1.25W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
DMN3030LSS-13 MOSFET N-CH 30V 9A 8SOP Diodes Incorporated	3,018 In Stock	1 : $0.76000 Cut Tape (CT) 2,500 : $0.17881 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	18mOhm @ 9A, 10V	2.1V @ 250µA	25 nC @ 10 V	±25V	741 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMA7672 MOSFET N-CH 30V 9A 6MICROFET onsemi	3,739 In Stock	1 : $0.94000 Cut Tape (CT) 3,000 : $0.22849 Tape & Reel (TR)	-	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	21mOhm @ 9A, 10V	3V @ 250µA	13 nC @ 10 V	±20V	760 pF @ 15 V	-	2.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
MCM1567-TP MOSFET P-CH 20V 9A DFN2020-6J MCC (Micro Commercial Components)	30,077 In Stock	1 : $1.14000 Cut Tape (CT) 3,000 : $0.28616 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	9A (Ta)	2.5V, 4.5V	18mOhm @ 6.7A, 4.5V	1V @ 250µA	34 nC @ 4.5 V	±12V	2760 pF @ 15 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020-6J	6-WDFN Exposed Pad
FDME820NZT MOSFET N-CH 20V 9A MICROFET onsemi	7,670 In Stock	1 : $1.31000 Cut Tape (CT) 5,000 : $0.31836 Tape & Reel (TR)	-	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	9A (Ta)	1.8V, 4.5V	18mOhm @ 9A, 4.5V	1V @ 250µA	8.5 nC @ 4.5 V	±12V	865 pF @ 10 V	-	2.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	MicroFet 1.6x1.6 Thin	6-PowerUFDFN
NTD3055-150T4G MOSFET N-CH 60V 9A DPAK onsemi	3,147 In Stock 7,500 Factory	1 : $1.39000 Cut Tape (CT) 2,500 : $0.36788 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9A (Ta)	10V	150mOhm @ 4.5A, 10V	4V @ 250µA	15 nC @ 10 V	±20V	280 pF @ 25 V	-	1.5W (Ta), 28.8W (Tj)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH5900CNH,L1Q MOSFET N-CH 150V 9A 8SOP Toshiba Semiconductor and Storage	10,416 In Stock	1 : $1.54000 Cut Tape (CT) 5,000 : $0.37347 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	9A (Ta)	10V	59mOhm @ 4.5A, 10V	4V @ 200µA	7 nC @ 10 V	±20V	600 pF @ 75 V	-	1.6W (Ta), 42W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
TPN22006NH,LQ MOSFET N-CH 60V 9A 8TSON Toshiba Semiconductor and Storage	4,964 In Stock	1 : $1.57000 Cut Tape (CT) 3,000 : $0.40473 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9A (Ta)	6.5V, 10V	22mOhm @ 4.5A, 10V	4V @ 100µA	12 nC @ 10 V	±20V	710 pF @ 30 V	-	700mW (Ta), 18W (Tc)	150°C (TJ)	-	-	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
TPN5900CNH,L1Q MOSFET N-CH 150V 9A 8TSON Toshiba Semiconductor and Storage	1,969 In Stock	1 : $1.88000 Cut Tape (CT) 5,000 : $0.48250 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	9A (Ta)	10V	59mOhm @ 4.5A, 10V	4V @ 200µA	7 nC @ 10 V	±20V	600 pF @ 75 V	-	700mW (Ta), 39W (Tc)	150°C (TJ)	-	-	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN
RRH090P03TB1 MOSFET P-CH 30V 9A 8SOP Rohm Semiconductor	2,031 In Stock	1 : $2.14000 Cut Tape (CT) 2,500 : $0.61168 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	15.4mOhm @ 9A, 10V	2.5V @ 1mA	30 nC @ 5 V	±20V	3000 pF @ 10 V	-	650mW (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RRS090P03HZGTB AUTOMOTIVE PCH -30V -9A POWER MO Rohm Semiconductor	1,704 In Stock	1 : $2.38000 Cut Tape (CT) 2,500 : $0.69560 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	15.4mOhm @ 9A, 10V	2.5V @ 1mA	30 nC @ 5 V	±20V	3000 pF @ 10 V	-	2W (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
R8009KNXC7G HIGH-SPEED SWITCHING NCH 800V 9A Rohm Semiconductor	1,561 In Stock	1 : $5.08000 Cut Tape (CT) 1,000 : $1.87125 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	800 V	9A (Ta)	10V	600mOhm @ 4.5A, 10V	4.5V @ 5mA	27 nC @ 10 V	±20V	900 pF @ 100 V	-	59W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FM	TO-220-3 Full Pack
ECH8310-TL-H MOSFET P-CH 30V 9A 8ECH onsemi	4,221 In Stock 60,000 Factory	1 : $1.37000 Cut Tape (CT) 3,000 : $0.35481 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	17mOhm @ 4.5A, 10V	-	28 nC @ 10 V	±20V	1400 pF @ 10 V	-	1.5W (Ta)	150°C (TJ)	-	-	Surface Mount	8-ECH	8-SMD, Flat Leads
NVD3055-150T4G-VF01 MOSFET N-CH 60V 9A DPAK onsemi	4,565 In Stock	1 : $1.65000 Cut Tape (CT) 2,500 : $0.45246 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9A (Ta)	10V	150mOhm @ 4.5A, 10V	4V @ 250µA	15 nC @ 10 V	±20V	280 pF @ 25 V	-	1.5W (Ta), 28.8W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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