97A (Tc) Single FETs, MOSFETs

Results: 23
Manufacturer
Infineon TechnologiesInternational RectifierMicrochip TechnologyNexperia USA Inc.NXP USA Inc.onsemiVishay SiliconixWolfspeed, Inc.
Series
-C3M™HEXFET®HEXFET®, StrongIRFET™POWER MOS V®TrenchFET®
Packaging
BagBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
25 V60 V75 V100 V200 V650 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7V, 10V10V15V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 20A, 10V6.3mOhm @ 25A, 10V7.8mOhm @ 20A, 10V8.6mOhm @ 58A, 10V8.8mOhm @ 25A, 10V8.8mOhm @ 58A, 10V9mOhm @ 58A, 10V22mOhm @ 48.5A, 10V22mOhm @ 500mA, 10V34mOhm @ 33.5A, 15V
Vgs(th) (Max) @ Id
1.95V @ 1mA2.5V @ 250µA3.6V @ 9.22mA4V @ 100µA4V @ 150µA4V @ 1mA4V @ 2.5mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21.6 nC @ 10 V44.5 nC @ 10 V55 nC @ 10 V108 nC @ 15 V112 nC @ 15 V116 nC @ 10 V120 nC @ 10 V125 nC @ 10 V130 nC @ 10 V290 nC @ 10 V435 nC @ 10 V
Vgs (Max)
+19V, -8V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 12 V2980 pF @ 600 V3181 pF @ 50 V3200 pF @ 25 V3540 pF @ 50 V4476 pF @ 50 V4820 pF @ 50 V6060 pF @ 25 V8500 pF @ 25 V10200 pF @ 25 V
Power Dissipation (Max)
64W (Tc)136W (Tc)150W (Tc)183W (Tc)190W (Tc)221W (Tc)230W (Tc)326W (Tc)450W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
D2PAKI2PAKISOTOP®LFPAK56, Power-SO8PG-TO263-3SOT-227TO-220TO-220ABTO-247-3TO-247-4LTO-247ACTO-252AATO-262
Package / Case
SC-100, SOT-669SOT-227-4, miniBLOCTO-220-3TO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRFB4410ZPBF
MOSFET N-CH 100V 97A TO220AB
Infineon Technologies
7,106
In Stock
1 : $1.30000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4410ZTRLPBF
MOSFET N-CH 100V 97A D2PAK
Infineon Technologies
8,623
In Stock
1 : $1.92000
Cut Tape (CT)
800 : $1.14538
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-252
SQD97N06-6M3L_GE3
MOSFET N-CH 60V 97A TO252AA
Vishay Siliconix
3,298
In Stock
1 : $1.60000
Cut Tape (CT)
2,000 : $0.72041
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
97A (Tc)
4.5V, 10V
6.3mOhm @ 25A, 10V
2.5V @ 250µA
125 nC @ 10 V
±20V
6060 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRF100B202
MOSFET N-CH 100V 97A TO220AB
Infineon Technologies
1,957
In Stock
1 : $1.90000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
8.6mOhm @ 58A, 10V
4V @ 150µA
116 nC @ 10 V
±20V
4476 pF @ 50 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
C2D10120D
C3M0025065D
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
1,548
In Stock
1 : $31.08000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
108 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-252
SQR97N06-6M3L_GE3
MOSFET N-CH 60V 50A TO252
Vishay Siliconix
1,992
In Stock
1 : $1.51000
Cut Tape (CT)
2,000 : $0.63525
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
97A (Tc)
4.5V, 10V
6.3mOhm @ 25A, 10V
2.5V @ 250µA
125 nC @ 10 V
±20V
6060 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
MOSFET N-CHANNEL 100V 97A I2PAK
PSMN8R5-100ESFQ
MOSFET N-CHANNEL 100V 97A I2PAK
Nexperia USA Inc.
0
In Stock
10,000
Marketplace
437 : $0.69000
Bulk
1,000 : $0.79184
Tube
-
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
7V, 10V
8.8mOhm @ 25A, 10V
4V @ 1mA
44.5 nC @ 10 V
±20V
3181 pF @ 50 V
-
183W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
INFINFIPAN60R360PFD7SXKSA1
IRFB4410ZGPBF
IRFB4410 - 12V-300V N-CHANNEL PO
International Rectifier
300
Marketplace
300 : $1.15000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
C3M0065100K
C3M0025065K
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : $30.95000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
112 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-220AB PKG
IRFB3507PBF
MOSFET N-CH 75V 97A TO220AB
Infineon Technologies
0
In Stock
3,000 : $1.39410
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
97A (Tc)
10V
8.8mOhm @ 58A, 10V
4V @ 100µA
130 nC @ 10 V
±20V
3540 pF @ 50 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-262-3
IRFSL4410ZPBF
MOSFET N-CH 100V 97A TO262
Infineon Technologies
0
In Stock
1,000 : $1.45565
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3507TRLPBF
MOSFET N-CH 75V 97A D2PAK
Infineon Technologies
0
In Stock
800 : $1.50485
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
97A (Tc)
10V
8.8mOhm @ 58A, 10V
4V @ 100µA
130 nC @ 10 V
±20V
3540 pF @ 50 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3507
MOSFET N-CH 75V 97A D2PAK
Infineon Technologies
0
In Stock
200 : $2.65975
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
97A (Tc)
10V
8.8mOhm @ 58A, 10V
4V @ 100µA
130 nC @ 10 V
±20V
3540 pF @ 50 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB PKG
IRFB3507
MOSFET N-CH 75V 97A TO220AB
Infineon Technologies
0
In Stock
50 : $2.83780
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
97A (Tc)
10V
8.8mOhm @ 58A, 10V
4V @ 100µA
130 nC @ 10 V
±20V
3540 pF @ 50 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
SOT-227-4,-miniBLOC
APT20M22JVR
MOSFET N-CH 200V 97A ISOTOP
Microchip Technology
0
In Stock
Check Lead Time
20 : $32.60000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
97A (Tc)
-
22mOhm @ 500mA, 10V
4V @ 2.5mA
435 nC @ 10 V
-
10200 pF @ 25 V
-
-
-
-
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
SOT-227-4, miniBLOC
APT20M22JVRU2
MOSFET N-CH 200V 97A SOT227
Microchip Technology
0
In Stock
Check Lead Time
32 : $33.19000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
200 V
97A (Tc)
10V
22mOhm @ 48.5A, 10V
4V @ 2.5mA
290 nC @ 10 V
±30V
8500 pF @ 25 V
-
450W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
SOT-227-4, miniBLOC
APT20M22JVRU3
MOSFET N-CH 200V 97A SOT227
Microchip Technology
0
In Stock
Check Lead Time
32 : $33.19000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
200 V
97A (Tc)
10V
22mOhm @ 48.5A, 10V
4V @ 2.5mA
290 nC @ 10 V
±30V
8500 pF @ 25 V
-
450W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-3 AC EP
IRFP4410ZPBF
MOSFET N-CH 100V 97A TO247AC
Infineon Technologies
0
In Stock
Obsolete
Bag
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4410ZPBF
MOSFET N-CH 100V 97A D2PAK
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB PKG
IRFB4410ZGPBF
MOSFET N-CH 100V 97A TO220AB
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
SC-100 SOT-669
PSMN3R7-25YLC,115
MOSFET N-CH 25V 97A LFPAK56
NXP USA Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
25 V
97A (Tc)
4.5V, 10V
3.9mOhm @ 20A, 10V
1.95V @ 1mA
21.6 nC @ 10 V
±20V
1585 pF @ 12 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO-220-3
NTP5863NG
MOSFET N-CH 60V 97A TO220AB
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
97A (Tc)
10V
7.8mOhm @ 20A, 10V
4V @ 250µA
55 nC @ 10 V
±20V
3200 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRFS4410Z
MOSFET N-CH 100V 97A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 23

97A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.