7.7A (Tc) Single FETs, MOSFETs

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of 56

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SIA446DJ-T1-GE3 MOSFET N-CH 150V 7.7A PPAK SC70 Vishay Siliconix	4,059 In Stock	1 : $1.01000 Cut Tape (CT) 3,000 : $0.24748 Tape & Reel (TR)	-	ThunderFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	7.7A (Tc)	6V, 10V	177mOhm @ 3A, 10V	3.5V @ 250µA	8 nC @ 10 V	±20V	230 pF @ 75 V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SIHFR120-GE3 MOSFET N-CHANNEL 100V Vishay Siliconix	3,003 In Stock	1 : $1.08000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFU014PBF MOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix	3,430 In Stock	1 : $1.93000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRLU014PBF MOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix	2,459 In Stock	1 : $1.93000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	4V, 5V	200mOhm @ 4.6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFR014PBF MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	1,203 In Stock	1 : $2.13000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFU120PBF MOSFET N-CH 100V 7.7A TO251AA Vishay Siliconix	3,455 In Stock	1 : $2.07000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFR120TRPBF MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	6,202 In Stock	1 : $2.13000 Cut Tape (CT) 2,000 : $0.62396 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120PBF MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	5,026 In Stock	1 : $2.13000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR014TRPBF MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	4,490 In Stock	1 : $2.13000 Cut Tape (CT) 2,000 : $0.62396 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFI9530GPBF MOSFET P-CH 100V 7.7A TO220-3 Vishay Siliconix	2,414 In Stock	1 : $3.77000 Tube	-	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	300mOhm @ 4.6A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	860 pF @ 25 V	-	42W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFR014PBF-BE3 MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	1,622 In Stock	1 : $2.01000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	-	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR014TRLPBF-BE3 MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	6,849 In Stock	1 : $2.13000 Cut Tape (CT) 3,000 : $0.57250 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	-	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120PBF-BE3 MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	5,765 In Stock	1 : $2.13000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	-	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120TRPBF-BE3 MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	3,832 In Stock	1 : $2.13000 Cut Tape (CT) 2,000 : $0.62396 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120TRLPBF-BE3 MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	2,869 In Stock	1 : $2.13000 Cut Tape (CT) 3,000 : $0.59807 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	-	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR014TRLPBF MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	2,538 In Stock	1 : $2.13000 Cut Tape (CT) 3,000 : $0.59807 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLR120PBF MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	550 In Stock	1 : $2.19000 Tube	-	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	4V, 5V	270mOhm @ 4.6A, 5V	2V @ 250µA	12 nC @ 5 V	±10V	490 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120 8.4A, 100V, 0.27OHM, N-CHANNEL M Fairchild Semiconductor	990 Marketplace	454 : $0.66000 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLR014TRPBF MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : $2.01000 Cut Tape (CT) 2,000 : $0.58300 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	4V, 5V	200mOhm @ 4.6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLR014PBF MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : $2.01000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	4V, 5V	200mOhm @ 4.6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120TRLPBF MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : $2.13000 Cut Tape (CT) 3,000 : $0.59807 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR014TRPBF-BE3 MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : $2.13000 Cut Tape (CT) 2,000 : $0.62396 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR120TRRPBF-BE3 MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : $2.13000 Cut Tape (CT) 3,000 : $0.59807 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	-	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI3456CDV-T1-E3 MOSFET N-CH 30V 7.7A 6TSOP Vishay Siliconix	0 In Stock	3,000 : $0.15228 Tape & Reel (TR)	-	TrenchFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	7.7A (Tc)	4.5V, 10V	34mOhm @ 6.1A, 10V	3V @ 250µA	12 nC @ 10 V	±20V	460 pF @ 15 V	-	2W (Ta), 3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3456CDV-T1-GE3 MOSFET N-CH 30V 7.7A 6TSOP Vishay Siliconix	0 In Stock	3,000 : $0.15228 Tape & Reel (TR)	-	TrenchFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	7.7A (Tc)	4.5V, 10V	34mOhm @ 6.1A, 10V	3V @ 250µA	12 nC @ 10 V	±20V	460 pF @ 15 V	-	2W (Ta), 3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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