55A (Tc) Single FETs, MOSFETs

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of 154

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TK7R7P10PL,RQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	18,865 In Stock	1 : $1.91000 Cut Tape (CT) 2,500 : $0.54292 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	4.5V, 10V	7.7mOhm @ 27.5A, 10V	2.5V @ 500µA	44 nC @ 10 V	±20V	2800 pF @ 50 V	-	93W (Tc)	175°C	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDPF55N06 MOSFET N-CH 60V 55A TO220F onsemi	3,704 In Stock	1 : $2.22000 Tube	Tariff may apply if shipping to the United States	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	10V	22mOhm @ 27.5A, 10V	4V @ 250µA	37 nC @ 10 V	±25V	1510 pF @ 25 V	-	48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
SCT3040KLGC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	574 In Stock	1 : $39.09000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
SQJ423EP-T1_GE3 MOSFET P-CH 40V 55A PPAK SO-8 Vishay Siliconix	10,907 In Stock	1 : $1.46000 Cut Tape (CT) 3,000 : $0.44359 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	55A (Tc)	4.5V, 10V	14mOhm @ 10A, 10V	2.5V @ 250µA	130 nC @ 10 V	±20V	4500 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
FQB55N10TM MOSFET N-CH 100V 55A D2PAK onsemi	1,123 In Stock	1 : $1.72000 Cut Tape (CT) 800 : $1.07100 Tape & Reel (TR)	Tariff may apply if shipping to the United States	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	10V	26mOhm @ 27.5A, 10V	4V @ 250µA	98 nC @ 10 V	±25V	2730 pF @ 25 V	-	3.75W (Ta), 155W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STP55NF06L MOSFET N-CH 60V 55A TO220AB STMicroelectronics	481 In Stock	1 : $1.81000 Tube	-	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	5V, 10V	18mOhm @ 27.5A, 10V	1.7V @ 250µA	37 nC @ 4.5 V	±16V	1700 pF @ 25 V	-	95W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
STL120N4F6AG MOSFET N-CH 40V 55A POWERFLAT STMicroelectronics	2,673 In Stock	1 : $1.90000 Cut Tape (CT) 3,000 : $0.76927 Tape & Reel (TR)	-	STripFET™ F6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	55A (Tc)	10V	3.6mOhm @ 13A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	3700 pF @ 25 V	-	96W (Tc)	175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
STB55NF06LT4 MOSFET N-CH 60V 55A D2PAK STMicroelectronics	835 In Stock	1 : $2.20000 Cut Tape (CT) 1,000 : $0.70232 Tape & Reel (TR)	Tariff may apply if shipping to the United States	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	5V, 10V	18mOhm @ 27.5A, 10V	4.7V @ 250µA	37 nC @ 4.5 V	±16V	1700 pF @ 25 V	-	95W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRL2910STRLPBF MOSFET N-CH 100V 55A D2PAK Infineon Technologies	3,579 In Stock	1 : $3.63000 Cut Tape (CT) 800 : $1.24844 Tape & Reel (TR)	Tariff may apply if shipping to the United States	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	4V, 10V	26mOhm @ 29A, 10V	2V @ 250µA	140 nC @ 5 V	±16V	3700 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SUM55P06-19L-E3 MOSFET P-CH 60V 55A TO263 Vishay Siliconix	1,899 In Stock	1 : $3.63000 Cut Tape (CT) 800 : $1.28519 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	4.5V, 10V	19mOhm @ 30A, 10V	3V @ 250µA	115 nC @ 10 V	±20V	3500 pF @ 25 V	-	3.75W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDMS8050 MOSFET N-CHANNEL 30V 55A 8PQFN onsemi	2,217 In Stock	1 : $5.54000 Cut Tape (CT) 3,000 : $2.09900 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	55A (Tc)	4.5V, 10V	0.65mOhm @ 55A, 10V	3V @ 750µA	285 nC @ 10 V	±20V	22610 pF @ 15 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IMW120R040M1HXKSA1 SIC DISCRETE Infineon Technologies	450 In Stock	1 : $12.19000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	15V, 18V	54.4mOhm @ 19.3A, 18V	5.2V @ 10mA	51 nC @ 18 V	+20V, -5V	1620 pF @ 800 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
NTMT045N065SC1 SILICON CARBIDE (SIC) MOSFET - 3 onsemi	6,608 In Stock	1 : $12.53000 Cut Tape (CT) 3,000 : $6.18237 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22V, -8V	1870 pF @ 325 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	4-TDFN (8x8)	4-PowerTSFN
IMZA120R040M1HXKSA1 SIC DISCRETE Infineon Technologies	186 In Stock	1 : $12.68000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	15V, 18V	54.4mOhm @ 19.3A, 18V	5.2V @ 8.3mA	51 nC @ 18 V	+20V, -5V	1620 pF @ 800 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
SCT025H120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	920 In Stock	1 : $17.16000 Cut Tape (CT) 1,000 : $11.58500 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	15V, 18V	37mOhm @ 25A, 18V	4.2V @ 5mA	73 nC @ 18 V	+18V, -5V	1990 pF @ 800 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DMNH6021SPSQ-13 MOSFET N-CH 60V 55A PWRDI5060-8 Diodes Incorporated	4,466 In Stock	1 : $1.03000 Cut Tape (CT) 2,500 : $0.30504 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	4.5V, 10V	23mOhm @ 12A, 10V	3V @ 250µA	19.7 nC @ 10 V	±20V	1016 pF @ 30 V	-	1.6W (Ta), 53W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerDI5060-8	8-PowerTDFN
DMPH4013SK3-13 MOSFET P-CH 40V 55A TO252 T&R Diodes Incorporated	3,251 In Stock 22,500 Factory	1 : $1.15000 Cut Tape (CT) 2,500 : $0.43969 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	55A (Tc)	4.5V, 10V	15mOhm @ 10A, 10V	3V @ 250µA	67 nC @ 10 V	±20V	4004 pF @ 20 V	-	2.1W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMPH4013SK3Q-13 MOSFET P-CH 40V 55A TO252 T&R Diodes Incorporated	846 In Stock	1 : $1.53000 Cut Tape (CT) 2,500 : $0.43784 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	55A (Tc)	4.5V, 10V	15mOhm @ 10A, 10V	3V @ 250µA	67 nC @ 10 V	±20V	4004 pF @ 20 V	-	2.1W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMNH10H028SK3Q-13 MOSFET N-CH 100V 55A TO252 Diodes Incorporated	1,933 In Stock	1 : $1.84000 Cut Tape (CT) 2,500 : $0.73500 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	10V	28mOhm @ 20A, 10V	4V @ 250µA	36 nC @ 10 V	±20V	2245 pF @ 50 V	-	2W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTH4L045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	188 In Stock 11,250 Factory	1 : $10.40000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22V, -8V	1870 pF @ 325 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
R6055VNZ4C13 600V 55A TO-247, PRESTOMOS WITH Rohm Semiconductor	476 In Stock	1 : $12.40000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	55A (Tc)	10V, 15V	71mOhm @ 16A, 15V	6.5V @ 1.5mA	80 nC @ 10 V	±30V	3700 pF @ 100 V	-	543W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
NVH4L045N065SC1 SIC MOS TO247-4L 650V onsemi	381 In Stock 900 Factory	1 : $18.89000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22V, -8V	1870 pF @ 325 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4
PJP45N06A_T0_00001 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	1,835 In Stock	1 : $1.31000 Tube	-	-	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	55A (Tc)	4.5V, 10V	12mOhm @ 20A, 10V	2.5V @ 250µA	39 nC @ 10 V	±20V	2256 pF @ 25 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SQJ423EP-T1_BE3 P-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix	3,000 In Stock	1 : $1.66000 Cut Tape (CT) 3,000 : $0.48260 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	55A (Tc)	4.5V, 10V	14mOhm @ 10A, 10V	2.5V @ 250µA	130 nC @ 10 V	±20V	4500 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PSMN015-100YSFX NEXTPOWER 80/100V MOSFETS Nexperia USA Inc.	1,403 In Stock	1 : $2.07000 Cut Tape (CT) 1,500 : $0.53025 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	7V, 10V	15mOhm @ 15A, 10V	4V @ 1mA	36 nC @ 10 V	±20V	2234 pF @ 50 V	-	105W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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