5.7A (Tc) Single FETs, MOSFETs

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of 30

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
FQD7P20TM MOSFET P-CH 200V 5.7A DPAK onsemi	15,593 In Stock	1 : $1.72000 Cut Tape (CT) 2,500 : $0.47439 Tape & Reel (TR)	Tariff may apply if shipping to the United States	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	5.7A (Tc)	10V	690mOhm @ 2.85A, 10V	5V @ 250µA	25 nC @ 10 V	±30V	770 pF @ 25 V	-	2.5W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD80R1K0CEATMA1 MOSFET N-CH 800V 5.7A TO252-3 Infineon Technologies	6,744 In Stock	1 : $2.01000 Cut Tape (CT) 2,500 : $0.55356 Tape & Reel (TR)	-	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	3.9V @ 250µA	31 nC @ 10 V	±20V	785 pF @ 100 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
DI5A7N65D1K-AQ MOSFET, DPAK, 650V, 5.7A, 150C, Diotec Semiconductor	2,450 In Stock	1 : $2.54000 Cut Tape (CT) 2,500 : $0.74994 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.7A (Tc)	10V	430mOhm @ 4A, 10V	4V @ 250µA	18.4 nC @ 10 V	±30V	722 pF @ 325 V	-	36W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPU80R1K0CEBKMA1 MOSFET N-CH 800V 5.7A TO251-3 Infineon Technologies	0 In Stock 1,410 Marketplace	354 : $0.85000 Tube	Tariff may apply if shipping to the United States	CoolMOS™	Tube Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	800 V	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	3.9V @ 250µA	31 nC @ 10 V	±20V	785 pF @ 100 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
NDD60N900U1T4G MOSFET N-CH 600V 5.7A DPAK onsemi	0 In Stock 1,922 Marketplace	319 : $0.94000 Bulk	-	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	5.7A (Tc)	10V	900mOhm @ 2.5A, 10V	4V @ 250µA	12 nC @ 10 V	±25V	360 pF @ 50 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPU80R1K0CEAKMA1 MOSFET N-CH 800V 5.7A TO251-3 Infineon Technologies	0 In Stock 124,500 Marketplace	253 : $1.19000 Bulk	-	CoolMOS™ CE	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	3.9V @ 250µA	31 nC @ 10 V	±20V	785 pF @ 100 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3-341	TO-251-3 Short Leads, IPAK, TO-251AA
PMN27UN,135 MOSFET N-CH 20V 5.7A 6TSOP Nexperia USA Inc.	20,250 Marketplace	806 : $0.37000 Bulk	-	TrenchMOS™	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5.7A (Tc)	1.8V, 4.5V	34mOhm @ 2A, 4.5V	700mV @ 1mA (Typ)	10.6 nC @ 4.5 V	±8V	740 pF @ 10 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-74	SC-74, SOT-457
PMN34LN,135 MOSFET N-CH 20V 5.7A 6TSOP Nexperia USA Inc.	10,173 Marketplace	806 : $0.37000 Bulk	-	TrenchMOS™	Bulk	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	5.7A (Tc)	4.5V, 10V	34mOhm @ 2.5A, 10V	2V @ 1mA	13.1 nC @ 10 V	±15V	500 pF @ 20 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-74	SC-74, SOT-457
PMN28UN,135 MOSFET N-CH 12V 5.7A 6TSOP Nexperia USA Inc.	16,992 Marketplace	582 : $0.52000 Bulk	-	TrenchMOS™	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	12 V	5.7A (Tc)	1.8V, 4.5V	34mOhm @ 2A, 4.5V	700mV @ 1mA (Typ)	10.1 nC @ 4.5 V	±8V	740 pF @ 10 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SC-74, SOT-457
IPA80R1K0CEXKSA2 MOSFET N-CH 800V 5.7A TO220-FP Infineon Technologies	0 In Stock Check Lead Time	1 : $2.24000 Tube	Tariff may apply if shipping to the United States	CoolMOS™ CE	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	3.9V @ 250µA	31 nC @ 10 V	±20V	785 pF @ 100 V	-	32W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
PMN34LN,135 MOSFET N-CH 20V 5.7A 6TSOP NXP USA Inc.	0 In Stock	Obsolete	-	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5.7A (Tc)	4.5V, 10V	34mOhm @ 2.5A, 10V	2V @ 1mA	13.1 nC @ 10 V	±15V	500 pF @ 20 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-74	SC-74, SOT-457
PMN27UN,135 MOSFET N-CH 20V 5.7A 6TSOP NXP USA Inc.	0 In Stock	Obsolete	-	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5.7A (Tc)	1.8V, 4.5V	34mOhm @ 2A, 4.5V	700mV @ 1mA (Typ)	10.6 nC @ 4.5 V	±8V	740 pF @ 10 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-74	SC-74, SOT-457
FQD7P20TF MOSFET P-CH 200V 5.7A DPAK onsemi	0 In Stock	2,000 : $0.53809 Tape & Reel (TR)	Tariff may apply if shipping to the United States	QFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	5.7A (Tc)	10V	690mOhm @ 2.85A, 10V	5V @ 250µA	25 nC @ 10 V	±30V	770 pF @ 25 V	-	2.5W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
DI5A7N65D1K MOSFET DPAK N 650V 5.7A Diotec Semiconductor	0 In Stock Check Lead Time	2,500 : $0.85640 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.7A (Tc)	10V	430mOhm @ 4A, 10V	4V @ 250µA	18.4 nC @ 10 V	±30V	722 pF @ 325 V	-	36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFI740GLC MOSFET N-CH 400V 5.7A TO220-3 Vishay Siliconix	0 In Stock	1,000 : $4.15000 Tube	-	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	5.7A (Tc)	10V	550mOhm @ 3.4A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI740GLCPBF MOSFET N-CH 400V 5.7A TO220-3 Vishay Siliconix	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	5.7A (Tc)	10V	550mOhm @ 3.4A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PMV30UN,215 MOSFET N-CH 20V 5.7A TO236AB NXP USA Inc.	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5.7A (Tc)	1.8V, 4.5V	36mOhm @ 2A, 4.5V	700mV @ 1mA (Typ)	7.4 nC @ 4.5 V	±8V	460 pF @ 20 V	-	1.9W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
PMN28UN,135 MOSFET N-CH 12V 5.7A 6TSOP Nexperia USA Inc.	0 In Stock	Obsolete	-	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12 V	5.7A (Tc)	1.8V, 4.5V	34mOhm @ 2A, 4.5V	700mV @ 1mA (Typ)	10.1 nC @ 4.5 V	±8V	740 pF @ 10 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SC-74, SOT-457
FQD7P20TM_F080 MOSFET P-CH 200V 5.7A DPAK onsemi	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	QFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	5.7A (Tc)	10V	690mOhm @ 2.85A, 10V	5V @ 250µA	25 nC @ 10 V	±30V	770 pF @ 25 V	-	2.5W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA90R1K0C3XKSA1 MOSFET N-CH 900V 5.7A TO220-FP Infineon Technologies	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	5.7A (Tc)	10V	1Ohm @ 3.3A, 10V	3.5V @ 370µA	34 nC @ 10 V	±20V	850 pF @ 100 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPI90R1K0C3XKSA1 MOSFET N-CH 900V 5.7A TO262-3 Infineon Technologies	0 In Stock	Obsolete	-	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	5.7A (Tc)	10V	1Ohm @ 3.3A, 10V	3.5V @ 370µA	34 nC @ 10 V	±20V	850 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2PAK, TO-262AA
IPP90R1K0C3XKSA1 MOSFET N-CH 900V 5.7A TO220-3 Infineon Technologies	0 In Stock	Obsolete	-	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	5.7A (Tc)	10V	1Ohm @ 3.3A, 10V	3.5V @ 370µA	34 nC @ 10 V	±20V	850 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
IPW90R1K0C3FKSA1 MOSFET N-CH 900V 5.7A TO247-3 Infineon Technologies	0 In Stock	Obsolete	-	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	5.7A (Tc)	10V	1Ohm @ 3.3A, 10V	3.5V @ 370µA	34 nC @ 10 V	±20V	850 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPA60R750E6XKSA1 MOSFET N-CH 600V 5.7A TO220-FP Infineon Technologies	0 In Stock	Obsolete	-	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	5.7A (Tc)	10V	750mOhm @ 2A, 10V	3.5V @ 170µA	17.2 nC @ 10 V	±20V	373 pF @ 100 V	-	27W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPD60R750E6BTMA1 MOSFET N-CH 600V 5.7A TO252-3 Infineon Technologies	0 In Stock	Discontinued at Digi-Key	Tariff may apply if shipping to the United States	CoolMOS™ E6	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	600 V	5.7A (Tc)	10V	750mOhm @ 2A, 10V	3.5V @ 170µA	17.2 nC @ 10 V	±20V	373 pF @ 100 V	-	48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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