48A (Ta) Single FETs, MOSFETs

Results: 21
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Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2306
TRANS GAN 100V .0038OHM 3X5PQFN
EPC
25,096
In Stock
1 : $5.09000
Cut Tape (CT)
3,000 : $1.87500
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2307
TRANS GAN 200V .010OHM 7QFN
EPC
5,065
In Stock
1 : $5.09000
Cut Tape (CT)
3,000 : $1.87500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 16A, 5V
2.5V @ 4mA
10.6 nC @ 5 V
+6V, -4V
1401 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2308
TRANS GAN 150V .006OHM 7QFN
EPC
8,909
In Stock
1 : $5.22000
Cut Tape (CT)
3,000 : $1.93750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Ta)
5V
6mOhm @ 15A, 5V
2.5V @ 5mA
13.8 nC @ 5 V
+6V, -4V
2103 pF @ 75 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2053
GANFET N-CH 100V 48A DIE
EPC
14,755
In Stock
1 : $7.35000
Cut Tape (CT)
2,500 : $3.06250
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 9mA
14.8 nC @ 5 V
+6V, -4V
1895 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 48A DIE
EPC
3,651
In Stock
1 : $8.58000
Cut Tape (CT)
500 : $3.76250
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
4mOhm @ 30A, 5V
2.5V @ 11mA
15 nC @ 5 V
+6V, -4V
1530 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 200V 48A DIE
EPC
4,742
In Stock
1 : $10.35000
Cut Tape (CT)
500 : $4.81250
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
11 nC @ 5 V
+6V, -4V
1140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 150V 48A DIE
EPC
1,333
In Stock
1 : $10.90000
Cut Tape (CT)
500 : $5.15000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Ta)
-
7mOhm @ 25A, 5V
2.5V @ 9mA
10 nC @ 5 V
-
1140 pF @ 75 V
-
-
-
-
-
Surface Mount
Die
Die
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
2,050
In Stock
1 : $6.31000
Cut Tape (CT)
3,000 : $2.50000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2307ENGRT
TRANS GAN 200V .010OHM 7QFN
EPC
18,235
In Stock
1 : $7.46000
Cut Tape (CT)
3,000 : $3.12500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 16A, 10V
2.5V @ 4mA
10.6 nC @ 5 V
+6V, -4V
1401 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
eGaN Series
GANFET N-CH 80V 48A DIE
EPC
13,589
In Stock
1 : $9.89000
Cut Tape (CT)
500 : $4.53750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
48A (Ta)
5V
3.2mOhm @ 30A, 5V
2.5V @ 12mA
13 nC @ 5 V
+6V, -4V
1410 pF @ 40 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2234
TRANS GAN AEC 160V .008OHM 24BGA
EPC
5,018
In Stock
1 : $12.79000
Cut Tape (CT)
500 : $6.35000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
160 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
13.8 nC @ 5 V
+5.5V, -4V
1386 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
24-BGA (4.6x2.6)
24-VFBGA
IRG4RC10UTRPBF
MOSFET N-CH 30V 48A TO263AB
Fairchild Semiconductor
20,289
Marketplace
387 : $0.78000
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MFT6N48T252
MOSFET N 60V 48A 188W TO-252
Meritek
2,400
Marketplace
10 : $0.80000
Strip
-
-
Strip
Active
N-Channel
MOSFET (Metal Oxide)
60 V
48A (Ta)
-
-
-
21 nC @ 50 V
-
1290 pF @ 50 V
-
-
-
-
-
-
-
-
INFINFIPAN60R360PFD7SXKSA1
MOSFET N-CH 30V 48A TO220-3
Fairchild Semiconductor
61,536
Marketplace
356 : $0.84000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
IRG4RC10UTRPBF
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
172,284
Marketplace
180 : $1.66000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
12mOhm @ 24A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
INFINFIPAN60R360PFD7SXKSA1
MOSFET N-CH 30V 48A TO220-3
Fairchild Semiconductor
106,637
Marketplace
179 : $1.68000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
12mOhm @ 24A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-220-3
MOSFET N-CH 30V 48A TO220-3
onsemi
0
In Stock
400 : $1.46248
Tube
Tariff may apply if shipping to the United States
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
12mOhm @ 24A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
eGaN Series
GANFET N-CH 200V 48A DIE
EPC
0
In Stock
1 : $7.83000
Cut Tape (CT)
500 : $4.05000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 20A, 5V
2.5V @ 7mA
8.8 nC @ 5 V
+6V, -4V
950 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
TO-220-3
MOSFET N-CH 30V 48A TO220-3
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-263
MOSFET N-CH 30V 48A TO263AB
onsemi
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
2.2mOhm @ 24A, 10V
2.3V @ 1mA
74 nC @ 10 V
±20V
6200 pF @ 10 V
-
1.6W (Ta), 63W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
Showing
of 21

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.